Upload BOM
Shipping address
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFB3006PBFMOSFET N-CH 60V 195A TO220AB |
2,047 | 4.92 |
RFQ |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8970 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IRFB4228PBFMOSFET N-CH 150V 83A TO220AB |
745 | 5.08 |
RFQ |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 107 nC @ 10 V | ±30V | 4530 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
|
IRFB3004PBFMOSFET N-CH 40V 195A TO220AB |
1,807 | 5.36 |
RFQ |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPW90R500C3XKSA1MOSFET N-CH 900V 11A TO247-3 |
1,155 | 5.66 |
RFQ |
Datasheet |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68 nC @ 10 V | ±20V | 1700 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPP60R099P7XKSA1MOSFET N-CH 600V 31A TO220-3 |
828 | 5.77 |
RFQ |
Datasheet |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45 nC @ 10 V | ±20V | 1952 pF @ 400 V | - | 117W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFP4004PBFMOSFET N-CH 40V 195A TO247AC |
917 | 6.46 |
RFQ |
Datasheet |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.7mOhm @ 195A, 10V | 4V @ 250µA | 330 nC @ 10 V | ±20V | 8920 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPP026N10NF2SAKMA1TRENCH >=100V |
1,448 | 6.60 |
RFQ |
Datasheet |
Tube | StrongIRFET™ 2 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 27A (Ta), 184A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.8V @ 169µA | 154 nC @ 10 V | ±20V | 7300 pF @ 50 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IPP075N15N3GXKSA1MOSFET N-CH 150V 100A TO220-3 |
979 | 6.76 |
RFQ |
Datasheet |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 100A (Tc) | 8V, 10V | 7.5mOhm @ 100A, 10V | 4V @ 270µA | 93 nC @ 10 V | ±20V | 5470 pF @ 75 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
SPP20N60S5XKSA1HIGH POWER_LEGACY |
1,496 | 7.57 |
RFQ |
Datasheet |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 190mOhm @ 13A, 10V | 5.5V @ 1mA | 103 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IPP030N10N3GXKSA1MOSFET N-CH 100V 100A TO220-3 |
2,911 | 7.85 |
RFQ |
Datasheet |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 275µA | 206 nC @ 10 V | ±20V | 14800 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPW65R095C7XKSA1MOSFET N-CH 650V 24A TO247 |
1,420 | 8.24 |
RFQ |
Datasheet |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45 nC @ 10 V | ±20V | 2140 pF @ 400 V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPA075N15N3GXKSA1MOSFET N-CH 150V 43A TO220-3 |
2,733 | 8.52 |
RFQ |
Datasheet |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 43A (Tc) | 8V, 10V | 7.5mOhm @ 43A, 10V | 4V @ 270µA | 93 nC @ 10 V | ±20V | 7280 pF @ 75 V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IRF300P227MOSFET N-CH 300V 50A TO247AC |
144 | 9.03 |
RFQ |
Datasheet |
Tube | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 50A (Tc) | 10V | 40mOhm @ 30A, 10V | 4V @ 270µA | 107 nC @ 10 V | ±20V | 4893 pF @ 50 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IPW60R070CFD7XKSA1MOSFET N-CH 650V 31A TO247-3 |
877 | 9.07 |
RFQ |
Datasheet |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31A (Tc) | 10V | 70mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67 nC @ 10 V | ±20V | 2721 pF @ 400 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IMW120R350M1HXKSA1SICFET N-CH 1.2KV 4.7A TO247-3 |
101 | 9.62 |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 4.7A (Tc) | 15V, 18V | 455mOhm @ 2A, 18V | 5.7V @ 1mA | 5.3 nC @ 18 V | +23V, -7V | 182 pF @ 800 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IMW120R220M1HXKSA1SICFET N-CH 1.2KV 13A TO247-3 |
210 | 10.45 |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 13A (Tc) | 15V, 18V | 286mOhm @ 4A, 18V | 5.7V @ 1.6mA | 8.5 nC @ 18 V | +23V, -7V | 289 pF @ 800 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IPP60R060C7XKSA1MOSFET N-CH 600V 35A TO220-3 |
347 | 10.87 |
RFQ |
Datasheet |
Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68 nC @ 10 V | ±20V | 2850 pF @ 400 V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IMW120R090M1HXKSA1SICFET N-CH 1.2KV 26A TO247-3 |
370 | 13.15 |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 15V, 18V | 117mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 21 nC @ 18 V | +23V, -7V | 707 pF @ 800 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IPP65R041CFD7XKSA1650V FET COOLMOS TO247 |
144 | 13.77 |
RFQ |
Datasheet |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 50A (Tc) | 10V | 41mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IMZ120R090M1HXKSA1SICFET N-CH 1.2KV 26A TO247-4 |
355 | 15.13 |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 15V, 18V | 117mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 21 nC @ 18 V | +23V, -7V | 707 pF @ 800 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
