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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK17E80W,S1X

TK17E80W,S1X

MOSFET N-CHANNEL 800V 17A TO220

Toshiba Semiconductor and Storage

2,454 4.37

RFQ

TK17E80W,S1X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 290mOhm @ 8.5A, 10V 4V @ 850µA 32 nC @ 10 V ±20V 2050 pF @ 300 V - 180W (Tc) 150°C Through Hole
TK25N60X,S1F

TK25N60X,S1F

MOSFET N-CH 600V 25A TO247

Toshiba Semiconductor and Storage

3,295 4.44

RFQ

TK25N60X,S1F

Datasheet

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 125mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) Through Hole
TK16J60W,S1VE

TK16J60W,S1VE

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

3,668 4.81

RFQ

TK16J60W,S1VE

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C Through Hole
TK31E60X,S1X

TK31E60X,S1X

MOSFET N-CH 600V 30.8A TO220

Toshiba Semiconductor and Storage

2,440 5.40

RFQ

TK31E60X,S1X

Datasheet

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
TK31N60X,S1F

TK31N60X,S1F

MOSFET N-CH 600V 30.8A TO247

Toshiba Semiconductor and Storage

3,342 5.68

RFQ

TK31N60X,S1F

Datasheet

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
TK090N65Z,S1F

TK090N65Z,S1F

MOSFET N-CH 650V 30A TO247

Toshiba Semiconductor and Storage

2,679 6.03

RFQ

TK090N65Z,S1F

Datasheet

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C Through Hole
TK31N60W5,S1VF

TK31N60W5,S1VF

MOSFET N-CH 600V 30.8A TO247

Toshiba Semiconductor and Storage

3,969 6.74

RFQ

TK31N60W5,S1VF

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 99mOhm @ 15.4A, 10V 4.5V @ 1.5mA 105 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) Through Hole
TK35A65W,S5X

TK35A65W,S5X

MOSFET N-CH 650V 35A TO220SIS

Toshiba Semiconductor and Storage

2,395 6.81

RFQ

TK35A65W,S5X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 80mOhm @ 17.5A, 10V 3.5V @ 2.1mA 100 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) Through Hole
TK39N60X,S1F

TK39N60X,S1F

MOSFET N-CH 600V 38.8A TO247

Toshiba Semiconductor and Storage

3,291 6.87

RFQ

TK39N60X,S1F

Datasheet

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 12.5A, 10V 3.5V @ 1.9mA 85 nC @ 10 V ±30V 4100 pF @ 300 V Super Junction 270W (Tc) 150°C (TJ) Through Hole
TK39J60W,S1VQ

TK39J60W,S1VQ

MOSFET N-CH 600V 38.8A TO3P

Toshiba Semiconductor and Storage

3,877 10.21

RFQ

TK39J60W,S1VQ

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V Super Junction 270W (Tc) 150°C (TJ) Through Hole
TK62N60X,S1F

TK62N60X,S1F

MOSFET N-CH 600V 61.8A TO247

Toshiba Semiconductor and Storage

2,239 10.72

RFQ

TK62N60X,S1F

Datasheet

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 21A, 10V 3.5V @ 3.1mA 135 nC @ 10 V ±30V 6500 pF @ 300 V Super Junction 400W (Tc) 150°C (TJ) Through Hole
TK040Z65Z,S1F

TK040Z65Z,S1F

MOSFET N-CH 650V 57A TO247-4L

Toshiba Semiconductor and Storage

3,741 11.83

RFQ

TK040Z65Z,S1F

Datasheet

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 57A (Ta) 10V 40mOhm @ 28.5A, 10V 4V @ 2.85mA 105 nC @ 10 V ±30V 6250 pF @ 300 V - 360W (Tc) 150°C Through Hole
TK39A60W,S4VX

TK39A60W,S4VX

MOSFET N-CH 600V 38.8A TO220SIS

Toshiba Semiconductor and Storage

3,558 10.21

RFQ

TK39A60W,S4VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) Through Hole
TK62J60W,S1VQ

TK62J60W,S1VQ

MOSFET N-CH 600V 61.8A TO3P

Toshiba Semiconductor and Storage

3,388 15.59

RFQ

TK62J60W,S1VQ

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 38mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180 nC @ 10 V ±30V 6500 pF @ 300 V Super Junction 400W (Tc) 150°C (TJ) Through Hole
TK39N60W,S1VF

TK39N60W,S1VF

MOSFET N CH 600V 38.8A TO247

Toshiba Semiconductor and Storage

3,196 10.89

RFQ

TK39N60W,S1VF

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V Super Junction 270W (Tc) 150°C (TJ) Through Hole
SSM6J213FE(TE85L,F

SSM6J213FE(TE85L,F

MOSFET P CH 20V 2.6A ES6

Toshiba Semiconductor and Storage

3,192 0.49

RFQ

SSM6J213FE(TE85L,F

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 1.5V, 4.5V 103mOhm @ 1.5A, 4.5V 1V @ 1mA 4.7 nC @ 4.5 V ±8V 290 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM6K403TU,LF

SSM6K403TU,LF

MOSFET N-CH 20V 4.2A UF6

Toshiba Semiconductor and Storage

2,938 0.51

RFQ

SSM6K403TU,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 1.5V, 4V 28mOhm @ 3A, 4V 1V @ 1mA 16.8 nC @ 4 V ±10V 1050 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM6J212FE,LF

SSM6J212FE,LF

MOSFET P-CH 20V 4A ES6

Toshiba Semiconductor and Storage

2,020 0.48

RFQ

SSM6J212FE,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4.5V 40.7mOhm @ 3A, 4.5V 1V @ 1mA 14.1 nC @ 4.5 V ±8V 970 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM6J771G,LF

SSM6J771G,LF

MOSFET P-CH 20V 5A 6WCSP

Toshiba Semiconductor and Storage

2,266 0.70

RFQ

SSM6J771G,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 2.5V, 8.5V 31mOhm @ 3A, 8.5V 1.2V @ 1mA 9.8 nC @ 4.5 V ±12V 870 pF @ 10 V - 1.2W (Ta) 150°C (TJ) Surface Mount
TPN22006NH,LQ

TPN22006NH,LQ

MOSFET N-CH 60V 9A 8TSON

Toshiba Semiconductor and Storage

2,333 0.91

RFQ

TPN22006NH,LQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta) 6.5V, 10V 22mOhm @ 4.5A, 10V 4V @ 100µA 12 nC @ 10 V ±20V 710 pF @ 30 V - 700mW (Ta), 18W (Tc) 150°C (TJ) Surface Mount
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