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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TPW4R50ANH,L1Q

TPW4R50ANH,L1Q

MOSFET N-CH 100V 92A 8DSOP

Toshiba Semiconductor and Storage

2,840 2.66

RFQ

TPW4R50ANH,L1Q

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 92A (Tc) 10V 4.5mOhm @ 46A, 10V 4V @ 1mA 58 nC @ 10 V ±20V 5200 pF @ 50 V - 800mW (Ta), 142W (Tc) 150°C (TJ) Surface Mount
2SK3564(STA4,Q,M)

2SK3564(STA4,Q,M)

MOSFET N-CH 900V 3A TO220SIS

Toshiba Semiconductor and Storage

3,403 1.70

RFQ

2SK3564(STA4,Q,M)

Datasheet

Tube π-MOSIV Active N-Channel MOSFET (Metal Oxide) 900 V 3A (Ta) 10V 4.3Ohm @ 1.5A, 10V 4V @ 1mA 17 nC @ 10 V ±30V 700 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
2SK3566(STA4,Q,M)

2SK3566(STA4,Q,M)

MOSFET N-CH 900V 2.5A TO220SIS

Toshiba Semiconductor and Storage

3,844 1.75

RFQ

2SK3566(STA4,Q,M)

Datasheet

Tube π-MOSIV Active N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Ta) 10V 6.4Ohm @ 1.5A, 10V 4V @ 1mA 12 nC @ 10 V ±30V 470 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
TK3R1A04PL,S4X

TK3R1A04PL,S4X

MOSFET N-CH 40V 82A TO220SIS

Toshiba Semiconductor and Storage

2,788 1.33

RFQ

TK3R1A04PL,S4X

Datasheet

Tube U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 82A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 4.5V 2.4V @ 500µA 63.4 nC @ 10 V ±20V 4670 pF @ 20 V - 36W (Tc) 175°C (TJ) Through Hole
TPH4R50ANH,L1Q

TPH4R50ANH,L1Q

MOSFET N CH 100V 60A SOP ADV

Toshiba Semiconductor and Storage

3,109 2.95

RFQ

TPH4R50ANH,L1Q

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 4.5mOhm @ 30A, 10V 4V @ 1mA 58 nC @ 10 V ±20V 5200 pF @ 50 V - 1.6W (Ta), 78W (Tc) 150°C (TJ) Surface Mount
TK5R3A06PL,S4X

TK5R3A06PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,804 1.40

RFQ

TK5R3A06PL,S4X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 4.5V, 10V 5.3mOhm @ 28A, 10V 2.5V @ 300µA 36 nC @ 10 V ±20V 2380 pF @ 30 V - 36W (Tc) 175°C Through Hole
TK22E10N1,S1X

TK22E10N1,S1X

MOSFET N CH 100V 52A TO220

Toshiba Semiconductor and Storage

3,589 1.42

RFQ

TK22E10N1,S1X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 52A (Tc) 10V 13.8mOhm @ 11A, 10V 4V @ 300µA 28 nC @ 10 V ±20V 1800 pF @ 50 V - 72W (Tc) 150°C (TJ) Through Hole
TK22A10N1,S4X

TK22A10N1,S4X

MOSFET N-CH 100V 22A TO220SIS

Toshiba Semiconductor and Storage

2,965 1.48

RFQ

TK22A10N1,S4X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 10V 13.8mOhm @ 11A, 10V 4V @ 300µA 28 nC @ 10 V ±20V 1800 pF @ 50 V - 30W (Tc) 150°C (TJ) Through Hole
TK290A65Y,S4X

TK290A65Y,S4X

MOSFET N-CH 650V 11.5A TO220SIS

Toshiba Semiconductor and Storage

2,101 2.05

RFQ

TK290A65Y,S4X

Datasheet

Tube DTMOSV Active N-Channel MOSFET (Metal Oxide) 650 V 11.5A (Tc) 10V 290mOhm @ 5.8A, 10V 4V @ 450µA 25 nC @ 10 V ±30V 730 pF @ 300 V - 35W (Tc) 150°C (TJ) Through Hole
TK34E10N1,S1X

TK34E10N1,S1X

MOSFET N-CH 100V 75A TO220

Toshiba Semiconductor and Storage

3,383 1.51

RFQ

TK34E10N1,S1X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 9.5mOhm @ 17A, 10V 4V @ 500µA 38 nC @ 10 V ±20V 2600 pF @ 50 V - 103W (Tc) 150°C (TJ) Through Hole
TK7A90E,S4X

TK7A90E,S4X

MOSFET N-CH 900V 7A TO220SIS

Toshiba Semiconductor and Storage

2,241 1.77

RFQ

TK7A90E,S4X

Datasheet

Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Ta) 10V 2Ohm @ 3.5A, 10V 4V @ 700µA 32 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK3R3A06PL,S4X

TK3R3A06PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

3,515 1.88

RFQ

TK3R3A06PL,S4X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 3.3mOhm @ 40A, 10V 2.5V @ 700µA 71 nC @ 10 V ±20V 5000 pF @ 30 V - 42W (Tc) 175°C Through Hole
TK100E06N1,S1X

TK100E06N1,S1X

MOSFET N CH 60V 100A TO-220

Toshiba Semiconductor and Storage

2,702 2.62

RFQ

TK100E06N1,S1X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 10V 2.3mOhm @ 50A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 10500 pF @ 30 V - 255W (Tc) 150°C (TJ) Through Hole
TK6R7A10PL,S4X

TK6R7A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,149 1.60

RFQ

TK6R7A10PL,S4X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 4.5V, 10V 6.7mOhm @ 28A, 10V 2.5V @ 500µA 58 nC @ 10 V ±20V 3455 pF @ 50 V - 42W (Tc) 175°C Through Hole
TK3R2E06PL,S1X

TK3R2E06PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,059 1.67

RFQ

TK3R2E06PL,S1X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 3.2mOhm @ 50A, 10V 2.5V @ 700µA 71 nC @ 10 V ±20V 5000 pF @ 30 V - 168W (Tc) 175°C Through Hole
TK9A90E,S4X

TK9A90E,S4X

MOSFET N-CH 900V 9A TO220SIS

Toshiba Semiconductor and Storage

2,594 2.32

RFQ

TK9A90E,S4X

Datasheet

Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 900 V 9A (Ta) 10V 1.3Ohm @ 4.5A, 10V 4V @ 900µA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
TKR74F04PB,LXGQ

TKR74F04PB,LXGQ

MOSFET N-CH 40V 250A TO220SM

Toshiba Semiconductor and Storage

3,094 4.75

RFQ

TKR74F04PB,LXGQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 250A (Ta) 6V, 10V 0.74mOhm @ 125A, 10V 3V @ 1mA 227 nC @ 10 V ±20V 14200 pF @ 10 V - 375W (Tc) 175°C Surface Mount
TK40E10N1,S1X

TK40E10N1,S1X

MOSFET N CH 100V 90A TO220

Toshiba Semiconductor and Storage

2,980 1.90

RFQ

TK40E10N1,S1X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 8.2mOhm @ 20A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3000 pF @ 50 V - 126W (Tc) 150°C (TJ) Through Hole
TK40A10N1,S4X

TK40A10N1,S4X

MOSFET N-CH 100V 40A TO220SIS

Toshiba Semiconductor and Storage

3,420 1.94

RFQ

TK40A10N1,S4X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 8.2mOhm @ 20A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3000 pF @ 50 V - 35W (Tc) 150°C (TJ) Through Hole
TK7J90E,S1E

TK7J90E,S1E

MOSFET N-CH 900V 7A TO3P

Toshiba Semiconductor and Storage

2,598 2.83

RFQ

TK7J90E,S1E

Datasheet

Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Ta) 10V 2Ohm @ 3.5A, 10V 4V @ 700µA 32 nC @ 10 V ±30V 1350 pF @ 25 V - 200W (Tc) 150°C (TJ) Through Hole
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