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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK1K9A60F,S4X

TK1K9A60F,S4X

MOSFET N-CH 600V 3.7A TO220SIS

Toshiba Semiconductor and Storage

3,080 0.94

RFQ

TK1K9A60F,S4X

Datasheet

Tube U-MOSIX Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Ta) 10V 1.9Ohm @ 1.9A, 10V 4V @ 400µA 14 nC @ 10 V ±30V 490 pF @ 300 V - 30W (Tc) 150°C Through Hole
TK90S06N1L,LQ

TK90S06N1L,LQ

MOSFET N-CH 60V 90A TO252-3

Toshiba Semiconductor and Storage

3,148 2.11

RFQ

TK90S06N1L,LQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Ta) 4.5V, 10V 3.3mOhm @ 45A, 10V 2.5V @ 500µA 81 nC @ 10 V ±20V 5400 pF @ 10 V - 157W (Tc) 175°C (TJ) Surface Mount
TPN5900CNH,L1Q

TPN5900CNH,L1Q

MOSFET N-CH 150V 9A 8TSON

Toshiba Semiconductor and Storage

2,876 1.27

RFQ

TPN5900CNH,L1Q

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 150 V 9A (Ta) 10V 59mOhm @ 4.5A, 10V 4V @ 200µA 7 nC @ 10 V ±20V 600 pF @ 75 V - 700mW (Ta), 39W (Tc) 150°C (TJ) Surface Mount
TK35A08N1,S4X

TK35A08N1,S4X

MOSFET N-CH 80V 35A TO220SIS

Toshiba Semiconductor and Storage

3,218 1.10

RFQ

TK35A08N1,S4X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 35A (Tc) 10V 12.2mOhm @ 17.5A, 10V 4V @ 300µA 25 nC @ 10 V ±20V 1700 pF @ 40 V - 30W (Tc) 150°C (TJ) Through Hole
TPH1R403NL,L1Q

TPH1R403NL,L1Q

MOSFET N-CH 30V 60A 8SOP

Toshiba Semiconductor and Storage

3,072 1.48

RFQ

TPH1R403NL,L1Q

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) 4.5V, 10V 1.4mOhm @ 30A, 10V 2.3V @ 500µA 46 nC @ 10 V ±20V 4400 pF @ 15 V - 1.6W (Ta), 64W (Tc) 150°C (TJ) Surface Mount
TK3A60DA(Q,M)

TK3A60DA(Q,M)

MOSFET N-CH 600V 2.5A TO220SIS

Toshiba Semiconductor and Storage

2,639 1.26

RFQ

TK3A60DA(Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Ta) 10V 2.8Ohm @ 1.3A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
TK58E06N1,S1X

TK58E06N1,S1X

MOSFET N-CH 60V 58A TO220

Toshiba Semiconductor and Storage

3,921 1.39

RFQ

TK58E06N1,S1X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Ta) 10V 5.4mOhm @ 29A, 10V 4V @ 500µA 46 nC @ 10 V ±20V 3400 pF @ 30 V - 110W (Tc) 150°C (TJ) Through Hole
TK34A10N1,S4X

TK34A10N1,S4X

MOSFET N-CH 100V 34A TO220SIS

Toshiba Semiconductor and Storage

3,693 1.62

RFQ

TK34A10N1,S4X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 34A (Tc) 10V 9.5mOhm @ 17A, 10V 4V @ 500µA 38 nC @ 10 V ±20V 2600 pF @ 50 V - 35W (Tc) 150°C (TJ) Through Hole
TK380A60Y,S4X

TK380A60Y,S4X

MOSFET N-CH 600V 9.7A TO220SIS

Toshiba Semiconductor and Storage

3,777 1.64

RFQ

TK380A60Y,S4X

Datasheet

Tube DTMOSV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Tc) 10V 380mOhm @ 4.9A, 10V 4V @ 360µA 20 nC @ 10 V ±30V 590 pF @ 300 V - 30W 150°C (TJ) Through Hole
TK560A65Y,S4X

TK560A65Y,S4X

MOSFET N-CH 650V 7A TO220SIS

Toshiba Semiconductor and Storage

2,977 1.64

RFQ

TK560A65Y,S4X

Datasheet

Tube DTMOSV Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 560mOhm @ 3.5A, 10V 4V @ 240µA 14.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W 150°C (TJ) Through Hole
TK8A60W5,S5VX

TK8A60W5,S5VX

MOSFET N-CH 600V 8A TO220SIS

Toshiba Semiconductor and Storage

2,905 1.84

RFQ

TK8A60W5,S5VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 540mOhm @ 4A, 10V 4.5V @ 400µA 22 nC @ 10 V ±30V 590 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
TK290A60Y,S4X

TK290A60Y,S4X

MOSFET N-CH 600V 11.5A TO220SIS

Toshiba Semiconductor and Storage

3,023 1.85

RFQ

TK290A60Y,S4X

Datasheet

Tube DTMOSV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Tc) 10V 290mOhm @ 5.8A, 10V 4V @ 450µA 25 nC @ 10 V ±30V 730 pF @ 300 V - 35W (Tc) 150°C (TJ) Through Hole
TK5A60W,S4VX

TK5A60W,S4VX

MOSFET N-CH 600V 5.4A TO220SIS

Toshiba Semiconductor and Storage

3,589 2.21

RFQ

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Ta) 10V 900mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
TPH4R008NH,L1Q

TPH4R008NH,L1Q

MOSFET N-CH 80V 60A 8SOP

Toshiba Semiconductor and Storage

2,807 2.95

RFQ

TPH4R008NH,L1Q

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 10V 4mOhm @ 30A, 10V 4V @ 1mA 59 nC @ 10 V ±20V 5300 pF @ 40 V - 1.6W (Ta), 78W (Tc) 150°C (TJ) Surface Mount
TK14A65W5,S5X

TK14A65W5,S5X

MOSFET N-CH 650V 13.7A TO220SIS

Toshiba Semiconductor and Storage

2,672 3.03

RFQ

TK14A65W5,S5X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 40W (Tc) 150°C (TJ) Through Hole
TK12E80W,S1X

TK12E80W,S1X

MOSFET N-CH 800V 11.5A TO220

Toshiba Semiconductor and Storage

2,125 3.44

RFQ

TK12E80W,S1X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 11.5A (Ta) 10V 450mOhm @ 5.8A, 10V 4V @ 570µA 23 nC @ 10 V ±20V 1400 pF @ 300 V - 165W (Tc) 150°C Through Hole
TK100A08N1,S4X

TK100A08N1,S4X

MOSFET N-CH 80V 100A TO220SIS

Toshiba Semiconductor and Storage

3,528 3.93

RFQ

TK100A08N1,S4X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 10V 3.2mOhm @ 50A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 9000 pF @ 40 V - 45W (Tc) 150°C (TJ) Through Hole
TK25A60X,S5X

TK25A60X,S5X

MOSFET N-CH 600V 25A TO220SIS

Toshiba Semiconductor and Storage

2,169 4.20

RFQ

TK25A60X,S5X

Datasheet

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 125mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
TK17N65W,S1F

TK17N65W,S1F

MOSFET N-CH 650V 17.3A TO247

Toshiba Semiconductor and Storage

2,592 3.67

RFQ

TK17N65W,S1F

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
TK31N60W,S1VF

TK31N60W,S1VF

MOSFET N CH 600V 30.8A TO247

Toshiba Semiconductor and Storage

3,118 8.85

RFQ

TK31N60W,S1VF

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
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