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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK14A65W,S5X

TK14A65W,S5X

MOSFET N-CH 650V 13.7A TO220SIS

Toshiba Semiconductor and Storage

3,770 2.96

RFQ

TK14A65W,S5X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 40W (Tc) 150°C (TJ) Through Hole
TK16E60W5,S1VX

TK16E60W5,S1VX

MOSFET N-CH 600V 15.8A TO220

Toshiba Semiconductor and Storage

3,792 2.97

RFQ

TK16E60W5,S1VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 230mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
TK3R2A10PL,S4X

TK3R2A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,325 3.08

RFQ

TK3R2A10PL,S4X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 3.2mOhm @ 50A, 10V 2.5V @ 1mA 161 nC @ 10 V ±20V 9500 pF @ 50 V - 54W (Tc) 175°C Through Hole
TK20A60W,S5VX

TK20A60W,S5VX

MOSFET N-CH 600V 20A TO220SIS

Toshiba Semiconductor and Storage

3,251 3.12

RFQ

TK20A60W,S5VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
TK3R9E10PL,S1X

TK3R9E10PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

3,714 2.24

RFQ

TK3R9E10PL,S1X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 3.9mOhm @ 50A, 10V 2.5V @ 1mA 96 nC @ 10 V ±20V 6320 pF @ 50 V - 230W (Tc) 175°C Through Hole
TK17A65W,S5X

TK17A65W,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,818 3.12

RFQ

TK17A65W,S5X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK14E65W5,S1X

TK14E65W5,S1X

MOSFET N-CH 650V 13.7A TO220

Toshiba Semiconductor and Storage

2,869 3.20

RFQ

TK14E65W5,S1X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
TK12A80W,S4X

TK12A80W,S4X

MOSFET N-CH 800V 11.5A TO220SIS

Toshiba Semiconductor and Storage

3,056 3.26

RFQ

TK12A80W,S4X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 11.5A (Ta) 10V 450mOhm @ 5.8A, 10V 4V @ 570µA 23 nC @ 10 V ±20V 1400 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK17A80W,S4X

TK17A80W,S4X

MOSFET N-CH 800V 17A TO220SIS

Toshiba Semiconductor and Storage

2,675 4.02

RFQ

TK17A80W,S4X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 290mOhm @ 8.5A, 10V 4V @ 850µA 32 nC @ 10 V ±20V 2050 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK100A06N1,S4X

TK100A06N1,S4X

MOSFET N-CH 60V 100A TO220SIS

Toshiba Semiconductor and Storage

3,401 2.87

RFQ

TK100A06N1,S4X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 2.7mOhm @ 50A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 10500 pF @ 30 V - 45W (Tc) 150°C (TJ) Through Hole
TK10E60W,S1VX

TK10E60W,S1VX

MOSFET N-CH 600V 9.7A TO220

Toshiba Semiconductor and Storage

2,204 2.92

RFQ

TK10E60W,S1VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V Super Junction 100W (Tc) 150°C (TJ) Through Hole
TK100A10N1,S4X

TK100A10N1,S4X

MOSFET N-CH 100V 100A TO220SIS

Toshiba Semiconductor and Storage

3,287 4.17

RFQ

TK100A10N1,S4X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 3.8mOhm @ 50A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 8800 pF @ 50 V - 45W (Tc) 150°C (TJ) Through Hole
TK25E60X,S1X

TK25E60X,S1X

MOSFET N-CH 600V 25A TO220

Toshiba Semiconductor and Storage

3,839 4.20

RFQ

TK25E60X,S1X

Datasheet

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 125mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) Through Hole
TK16A60W,S4VX

TK16A60W,S4VX

MOSFET N-CH 600V 15.8A TO220SIS

Toshiba Semiconductor and Storage

3,573 3.11

RFQ

TK16A60W,S4VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 40W (Tc) 150°C (TJ) Through Hole
TK72A12N1,S4X

TK72A12N1,S4X

MOSFET N-CH 120V 72A TO220SIS

Toshiba Semiconductor and Storage

2,865 3.15

RFQ

TK72A12N1,S4X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 72A (Tc) 10V 4.5mOhm @ 36A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8100 pF @ 60 V - 45W (Tc) 150°C (TJ) Through Hole
TK17A65W5,S5X

TK17A65W5,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

3,474 3.29

RFQ

TK17A65W5,S5X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 230mOhm @ 8.7A, 10V 4.5V @ 900µA 50 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C Through Hole
TK25A60X5,S5X

TK25A60X5,S5X

MOSFET N-CH 600V 25A TO220SIS

Toshiba Semiconductor and Storage

2,622 4.83

RFQ

TK25A60X5,S5X

Datasheet

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
TK20N60W5,S1VF

TK20N60W5,S1VF

MOSFET N-CH 600V 20A TO247

Toshiba Semiconductor and Storage

3,209 3.74

RFQ

TK20N60W5,S1VF

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
TK16N60W,S1VF

TK16N60W,S1VF

MOSFET N CH 600V 15.8A TO247

Toshiba Semiconductor and Storage

2,649 3.99

RFQ

TK16N60W,S1VF

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 130W (Tc) 150°C (TJ) Through Hole
TK14N65W5,S1F

TK14N65W5,S1F

MOSFET N-CH 650V 13.7A TO247

Toshiba Semiconductor and Storage

2,554 4.10

RFQ

TK14N65W5,S1F

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
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