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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT12040JVRMOSFET N-CH 1200V 26A SOT227 |
2,185 | 114.65 |
RFQ |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 26A (Tc) | 10V | 400mOhm @ 13A, 10V | 4V @ 5mA | 1200 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
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VN2450N3-GMOSFET N-CH 500V 200MA TO92-3 |
741 | 1.51 |
RFQ |
Datasheet |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 200mA (Tj) | 4.5V, 10V | 13Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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VN0606L-GMOSFET N-CH 60V 330MA TO92-3 |
143 | 1.56 |
RFQ |
Datasheet |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 330mA (Tj) | 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±30V | 50 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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|
TP2540N3-GMOSFET P-CH 400V 86MA TO92-3 |
375 | 1.86 |
RFQ |
Datasheet |
Bag | - | Active | P-Channel | MOSFET (Metal Oxide) | 400 V | 86mA (Tj) | 4.5V, 10V | 25Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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VN0550N3-GMOSFET N-CH 500V 50MA TO92-3 |
369 | 1.93 |
RFQ |
Datasheet |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 50mA (Tj) | 5V, 10V | 60Ohm @ 50mA, 10V | 4V @ 1mA | - | ±20V | 55 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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VN4012L-GMOSFET N-CH 400V 160MA TO92-3 |
804 | 2.08 |
RFQ |
Datasheet |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 160mA (Tj) | 4.5V | 12Ohm @ 100mA, 4.5V | 1.8V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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VP2450N3-GMOSFET P-CH 500V 100MA TO92-3 |
328 | 2.12 |
RFQ |
Datasheet |
Bag | - | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 100mA (Tj) | 4.5V, 10V | 30Ohm @ 100mA, 10V | 3.5V @ 1mA | - | ±20V | 190 pF @ 25 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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VP0550N3-GMOSFET P-CH 500V 54MA TO92-3 |
151 | 2.29 |
RFQ |
Datasheet |
Bag | - | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 54mA (Tj) | 5V, 10V | 125Ohm @ 10mA, 10V | 4.5V @ 1mA | - | ±20V | 70 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
APT30F50BMOSFET N-CH 500V 30A TO247 |
2,177 | 5.57 |
RFQ |
Datasheet |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 190mOhm @ 14A, 10V | 5V @ 1mA | 115 nC @ 10 V | ±30V | 4525 pF @ 25 V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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|
APT37F50BMOSFET N-CH 500V 37A TO247 |
2,932 | 7.08 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 37A (Tc) | 10V | 150mOhm @ 18A, 10V | 5V @ 1mA | 145 nC @ 10 V | ±30V | 5710 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
MSC090SMA070BSICFET N-CH 700V TO247-3 |
2,951 | 8.12 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Through Hole |
|
|
MSC060SMA070BSICFET N-CH 700V 39A TO247-3 |
2,037 | 10.30 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 39A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.4V @ 1mA | 56 nC @ 20 V | +23V, -10V | 1175 pF @ 700 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
MSC060SMA070SSICFET N-CH 700V 37A D3PAK |
2,341 | 11.29 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 37A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.4V @ 1mA | 56 nC @ 20 V | +23V, -10V | 1175 pF @ 700 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
APT56F50B2MOSFET N-CH 500V 56A T-MAX |
2,436 | 13.82 |
RFQ |
Datasheet |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT47N60BC3GMOSFET N-CH 600V 47A TO247 |
3,603 | 14.01 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT47N60SC3GMOSFET N-CH 600V 47A D3PAK |
2,953 | 15.11 |
RFQ |
Datasheet |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
MSC035SMA070SMOSFET N-CH 700V D3PAK |
2,582 | 17.06 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 65A (Tc) | 20V | 44mOhm @ 30A, 20V | 2.7V @ 1mA | 99 nC @ 20 V | +23V, -10V | 2010 pF @ 700 V | - | 206W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
APT38F80LMOSFET N-CH 800V 41A TO264 |
3,778 | 18.79 |
RFQ |
Datasheet |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8070 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
APT106N60LC6MOSFET N-CH 600V 106A TO264 |
3,453 | 21.74 |
RFQ |
Datasheet |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 106A (Tc) | 10V | 35mOhm @ 53A, 10V | 3.5V @ 3.4mA | 308 nC @ 10 V | ±20V | 8390 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT48M80LMOSFET N-CH 800V 49A TO264 |
3,987 | 21.97 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 49A (Tc) | 10V | 200mOhm @ 24A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9330 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
