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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MIC94031CYWMOSFET P-CH 16V 1A |
3,289 | 0.00 |
RFQ |
Tape & Reel (TR) | TinyFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 16 V | 1A (Ta) | - | 450mOhm @ 100mA, 10V | 1.4V @ 250µA | - | - | - | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | - | |
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APT1001R1BNMOSFET N-CH 1000V 10.5A TO247AD |
2,090 | 0.00 |
RFQ |
Datasheet |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10.5A (Tc) | 10V | 1.1Ohm @ 5.25A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT1001RBNMOSFET N-CH 1000V 11A TO247AD |
2,429 | 0.00 |
RFQ |
Datasheet |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 11A (Tc) | 10V | 1Ohm @ 5.5A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT5020BNMOSFET N-CH 500V 28A TO247AD |
2,066 | 0.00 |
RFQ |
Datasheet |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT5020BNFRMOSFET N-CH 500V 28A TO247AD |
3,582 | 0.00 |
RFQ |
Tube | POWER MOS IV® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
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APL602L-1MOSFET LINEAR 600 V 49 A TO-264 |
2,647 | 0.00 |
RFQ |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 12V | 125mOhm @ 24.5A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
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MSC360SMA120BMOSFET SIC 1200 V 360 MOHM TO-24 |
2,963 | 0.00 |
RFQ |
Tube | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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TN2130K1-G-VAOMOSFET N-CH 300V 85MA SOT23-3 |
3,372 | 0.00 |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 85mA (Tj) | 4.5V | 25Ohm @ 120mA, 4.5V | 2.4V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TA) | Surface Mount | |
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TP5335K1-G-VAOMOSFET P-CH 350V 85MA SOT23-3 |
2,147 | 0.00 |
RFQ |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 350 V | 85mA (Tj) | 4.5V, 10V | 30Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
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MSC750SMA170SAMOSFET SIC 1700 V 750 MOHM TO-26 |
2,571 | 0.00 |
RFQ |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 6A (Tc) | 20V | 940mOhm @ 2.5A, 20V | 3.25V @ 100µA (Typ) | 11 nC @ 20 V | +23V, -10V | 184 pF @ 1000 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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MSC180SMA120SAMOSFET SIC 1200 V 180 MOHM TO-26 |
2,852 | 0.00 |
RFQ |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 20V | 225mOhm @ 8A, 20V | 3.26V @ 500µA | 34 nC @ 20 V | +23V, -10V | 510 pF @ 1000 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | |
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MSC060SMA070SAMOSFET SIC 700 V 60 MOHM TO-263- |
2,739 | 0.00 |
RFQ |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 37A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.4V @ 1mA | 56 nC @ 20 V | +23V, -10V | 1175 pF @ 700 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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MSC080SMA120SAMOSFET SIC 1200 V 80 MOHM TO-263 |
3,138 | 0.00 |
RFQ |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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MSC090SMA070SAMOSFET SIC 700 V 90 MOHM TO-263- |
3,473 | 0.00 |
RFQ |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 25A (Tc) | 20V | 115mOhm @ 15A, 20V | 2.4V @ 750µA | 38 nC @ 20 V | +23V, -10V | 785 pF @ 700 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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MSC360SMA120SAMOSFET SIC 1200 V 360 MOHM TO-26 |
3,951 | 0.00 |
RFQ |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 20V | 450mOhm @ 5A, 20V | 3.14V @ 250µA | 21 nC @ 20 V | +23V, -10V | 255 pF @ 1000 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | |
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MSC025SMA330B4MOSFET SIC 3300 V 25 MOHM TO-247 |
2,028 | 0.00 |
RFQ |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 104A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.7V @ 7mA | 410 nC @ 20 V | +23V, -10V | 8720 pF @ 2640 V | - | - | -55°C ~ 150°C (TJ) | Through Hole | |
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MRH25N12U3RH MOSFET _ U3 |
3,310 | 0.00 |
RFQ |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 12.4A (Tc) | 12V | 210mOhm @ 7.5A, 12V | 4V @ 1mA | 50 nC @ 12 V | ±20V | 1980 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
