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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSM10N954L,EFF

SSM10N954L,EFF

COMMON-DRAIN NCH MOSFET, 12V, 13

Toshiba Semiconductor and Storage

10,000 1.41

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 12 V 13.5A (Ta) 2.5V, 4.5V 2.75mOhm @ 6A, 4.5V 1.4V @ 1.11mA 25 nC @ 4 V ±8V - - 800mW (Ta) 150°C Surface Mount
TK190U65Z,RQ

TK190U65Z,RQ

DTMOS VI TOLL PD=130W F=1MHZ

Toshiba Semiconductor and Storage

3,313 3.10

RFQ

TK190U65Z,RQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C Surface Mount
TK155U65Z,RQ

TK155U65Z,RQ

DTMOS VI TOLL PD=150W F=1MHZ

Toshiba Semiconductor and Storage

3,970 3.24

RFQ

TK155U65Z,RQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 155mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 150W (Tc) 150°C Surface Mount
TK2R4A08QM,S4X

TK2R4A08QM,S4X

UMOS10 TO-220SIS 80V 2.4MOHM

Toshiba Semiconductor and Storage

137 3.00

RFQ

TK2R4A08QM,S4X

Datasheet

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 2.44mOhm @ 50A, 10V 3.5V @ 2.2mA 179 nC @ 10 V ±20V 13000 pF @ 40 V - 47W (Tc) 175°C Through Hole
TK110U65Z,RQ

TK110U65Z,RQ

DTMOS VI TOLL PD=190W F=1MHZ

Toshiba Semiconductor and Storage

3,820 4.31

RFQ

TK110U65Z,RQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C Surface Mount
TK090U65Z,RQ

TK090U65Z,RQ

DTMOS VI TOLL PD=230W F=1MHZ

Toshiba Semiconductor and Storage

3,983 5.23

RFQ

TK090U65Z,RQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C Surface Mount
TK155E65Z,S1X

TK155E65Z,S1X

650V DTMOS VI TO-220 155MOHM

Toshiba Semiconductor and Storage

196 3.41

RFQ

TK155E65Z,S1X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 155mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 150W (Tc) 150°C Through Hole
TK090E65Z,S1X

TK090E65Z,S1X

650V DTMOS VI TO-220 90MOHM

Toshiba Semiconductor and Storage

200 5.36

RFQ

TK090E65Z,S1X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C Through Hole
TW107N65C,S1F

TW107N65C,S1F

G3 650V SIC-MOSFET TO-247 107MO

Toshiba Semiconductor and Storage

125 10.08

RFQ

TW107N65C,S1F

Datasheet

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 20A (Tc) 18V 145mOhm @ 10A, 18V 5V @ 1.2mA 21 nC @ 18 V +25V, -10V 600 pF @ 400 V - 76W (Tc) 175°C Through Hole
TW140N120C,S1F

TW140N120C,S1F

G3 1200V SIC-MOSFET TO-247 140M

Toshiba Semiconductor and Storage

105 11.91

RFQ

TW140N120C,S1F

Datasheet

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 20A (Tc) 18V 182mOhm @ 10A, 18V 5V @ 1mA 24 nC @ 18 V +25V, -10V 691 pF @ 800 V - 107W (Tc) 175°C Through Hole
TW083N65C,S1F

TW083N65C,S1F

G3 650V SIC-MOSFET TO-247 83MOH

Toshiba Semiconductor and Storage

175 13.40

RFQ

TW083N65C,S1F

Datasheet

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 30A (Tc) 18V 113mOhm @ 15A, 18V 5V @ 600µA 28 nC @ 18 V +25V, -10V 873 pF @ 400 V - 111W (Tc) 175°C Through Hole
TW060N120C,S1F

TW060N120C,S1F

G3 1200V SIC-MOSFET TO-247 60MO

Toshiba Semiconductor and Storage

165 20.79

RFQ

TW060N120C,S1F

Datasheet

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 36A (Tc) 18V 78mOhm @ 18A, 18V 5V @ 4.2mA 46 nC @ 18 V +25V, -10V 1530 pF @ 800 V - 170W (Tc) 175°C Through Hole
TW027N65C,S1F

TW027N65C,S1F

G3 650V SIC-MOSFET TO-247 27MOH

Toshiba Semiconductor and Storage

180 23.78

RFQ

TW027N65C,S1F

Datasheet

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 58A (Tc) 18V 37mOhm @ 29A, 18V 5V @ 3mA 65 nC @ 18 V +25V, -10V 2288 pF @ 400 V - 156W (Tc) 175°C Through Hole
TW045N120C,S1F

TW045N120C,S1F

G3 1200V SIC-MOSFET TO-247 45MO

Toshiba Semiconductor and Storage

150 24.84

RFQ

TW045N120C,S1F

Datasheet

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 40A (Tc) 18V 59mOhm @ 20A, 18V 5V @ 6.7mA 57 nC @ 18 V +25V, -10V 1969 pF @ 800 V - 182W (Tc) 175°C Through Hole
TW030N120C,S1F

TW030N120C,S1F

G3 1200V SIC-MOSFET TO-247 30MO

Toshiba Semiconductor and Storage

175 36.09

RFQ

TW030N120C,S1F

Datasheet

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 60A (Tc) 18V 40mOhm @ 30A, 18V 5V @ 13mA 82 nC @ 18 V +25V, -10V 2925 pF @ 800 V - 249W (Tc) 175°C Through Hole
TW015N65C,S1F

TW015N65C,S1F

G3 650V SIC-MOSFET TO-247 15MOH

Toshiba Semiconductor and Storage

165 58.09

RFQ

TW015N65C,S1F

Datasheet

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 100A (Tc) 18V 21mOhm @ 50A, 18V 5V @ 11.7mA 128 nC @ 18 V +25V, -10V 4850 pF @ 400 V - 342W (Tc) 175°C Through Hole
TW015N120C,S1F

TW015N120C,S1F

G3 1200V SIC-MOSFET TO-247 15MO

Toshiba Semiconductor and Storage

160 71.28

RFQ

TW015N120C,S1F

Datasheet

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 100A (Tc) 18V 20mOhm @ 50A, 18V 5V @ 11.7mA 158 nC @ 18 V +25V, -10V 6000 pF @ 800 V - 431W (Tc) 175°C Through Hole
2SK1828TE85LF

2SK1828TE85LF

MOSFET N-CH 20V 50MA SC59

Toshiba Semiconductor and Storage

12,026 0.38

RFQ

2SK1828TE85LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50mA (Ta) 2.5V 40Ohm @ 10mA, 2.5V 1.5V @ 100µA - 10V 5.5 pF @ 3 V - 200mW (Ta) 150°C (TJ) Surface Mount
SSM6K208FE,LF

SSM6K208FE,LF

MOSFET N-CH 30V 1.9A ES6

Toshiba Semiconductor and Storage

7,940 0.49

RFQ

SSM6K208FE,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 1.8V, 4V 133mOhm @ 1A, 4V 1V @ 1mA 1.9 nC @ 4 V ±12V 123 pF @ 15 V - 500mW (Ta) 150°C Surface Mount
SSM3K7002CFU,LF

SSM3K7002CFU,LF

MOSFET N-CH 60V 170MA USM

Toshiba Semiconductor and Storage

2,462 0.19

RFQ

SSM3K7002CFU,LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 4.5V, 10V 3.9Ohm @ 100mA, 10V 2.1V @ 250µA 0.35 nC @ 4.5 V ±20V 17 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
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