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Toshiba Semiconductor and Storage TW030N120C,S1F

Part No. TW030N120C,S1F

Manufacturer Toshiba Semiconductor and Storage

Category Transistors - FETs, MOSFETs - Single

Package TO-247

Datasheet TW030N120C,S1F.pdf

Description G3 1200V SIC-MOSFET TO-247 30MO

Quantity

RFQ

TW030N120C,S1F Details

Specifications FAQ Shopping Process

Packaging Tube

Series -

ProductStatus Active

FETType N-Channel

Technology SiC (Silicon Carbide Junction Transistor)

DraintoSourceVoltage(Vdss) 1200 V

Current-ContinuousDrain(Id)@25°C 60A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 18V

RdsOn(Max)@IdVgs 40mOhm @ 30A, 18V

Vgs(th)(Max)@Id 5V @ 13mA

GateCharge(Qg)(Max)@Vgs 82 nC @ 18 V

Vgs(Max) +25V, -10V

InputCapacitance(Ciss)(Max)@Vds 2925 pF @ 800 V

FETFeature -

PowerDissipation(Max) 249W (Tc)

OperatingTemperature 175°C

MountingType Through Hole

Category Transistors - FETs, MOSFETs - Single

Datasheet TW030N120C,S1F.pdf

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TW030N120C,S1F Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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