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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TPH2R306NH1,LQ

TPH2R306NH1,LQ

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

Toshiba Semiconductor and Storage

4,850 1.67

RFQ

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 136A (Tc) 6.5V, 10V 2.3mOhm @ 50A, 10V 4V @ 1mA 72 nC @ 10 V ±20V 6100 pF @ 30 V - 800mW (Ta), 170W (Tc) 150°C Surface Mount
TPH2R306NH,L1Q

TPH2R306NH,L1Q

MOSFET N-CH 60V 60A 8SOP

Toshiba Semiconductor and Storage

1,464 1.69

RFQ

TPH2R306NH,L1Q

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 6.5V, 10V 2.3mOhm @ 30A, 10V 4V @ 1mA 72 nC @ 10 V ±20V 6100 pF @ 30 V - 1.6W (Ta), 78W (Tc) 150°C (TJ) Surface Mount
TK125V65Z,LQ

TK125V65Z,LQ

MOSFET N-CH 650V 24A 5DFN

Toshiba Semiconductor and Storage

7,486 4.66

RFQ

TK125V65Z,LQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 125mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C Surface Mount
TPH2R408QM,L1Q

TPH2R408QM,L1Q

MOSFET N-CH 80V 120A 8SOP

Toshiba Semiconductor and Storage

7,840 1.91

RFQ

TPH2R408QM,L1Q

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.43mOhm @ 50A, 10V 3.5V @ 1mA 87 nC @ 10 V ±20V 8300 pF @ 40 V - 3W (Ta), 210W (Tc) 175°C Surface Mount
XPW6R30ANB,L1XHQ

XPW6R30ANB,L1XHQ

MOSFET N-CH 100V 45A 8DSOP

Toshiba Semiconductor and Storage

3,022 2.08

RFQ

XPW6R30ANB,L1XHQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 45A (Ta) 6V, 10V 6.3mOhm @ 22.5A, 10V 3.5V @ 500µA 52 nC @ 10 V ±20V 3240 pF @ 10 V - 960mW (Ta), 132W (Tc) 175°C Surface Mount
TK20V60W5,LVQ

TK20V60W5,LVQ

MOSFET N-CH 600V 20A 4DFN

Toshiba Semiconductor and Storage

424 2.94

RFQ

TK20V60W5,LVQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 190mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 156W (Tc) 150°C (TJ) Surface Mount
TK170V65Z,LQ

TK170V65Z,LQ

MOSFET N-CH 650V 18A 5DFN

Toshiba Semiconductor and Storage

2,470 3.18

RFQ

TK170V65Z,LQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 170mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 150W (Tc) 150°C Surface Mount
TK31V60W5,LVQ

TK31V60W5,LVQ

MOSFET N-CH 600V 30.8A 4DFN

Toshiba Semiconductor and Storage

1,660 4.10

RFQ

TK31V60W5,LVQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 109mOhm @ 15.4A, 10V 4.5V @ 1.5mA 105 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C (TA) Surface Mount
TK100L60W,VQ

TK100L60W,VQ

MOSFET N-CH 600V 100A TO3P

Toshiba Semiconductor and Storage

3,315 33.12

RFQ

TK100L60W,VQ

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 100A (Ta) 10V 18mOhm @ 50A, 10V 3.7V @ 5mA 360 nC @ 10 V ±30V 15000 pF @ 30 V Super Junction 797W (Tc) 150°C (TJ) Through Hole
TK10A60W5,S5VX

TK10A60W5,S5VX

MOSFET N-CH 600V 9.7A TO220SIS

Toshiba Semiconductor and Storage

2,656 2.14

RFQ

TK10A60W5,S5VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 450mOhm @ 4.9A, 10V 4.5V @ 500µA 25 nC @ 10 V ±30V 720 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
TK8A65D(STA4,Q,M)

TK8A65D(STA4,Q,M)

MOSFET N-CH 650V 8A TO220SIS

Toshiba Semiconductor and Storage

2,444 2.51

RFQ

TK8A65D(STA4,Q,M)

Datasheet

Bulk π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Ta) 10V 840mOhm @ 4A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK65E10N1,S1X

TK65E10N1,S1X

MOSFET N CH 100V 148A TO220

Toshiba Semiconductor and Storage

134 2.78

RFQ

TK65E10N1,S1X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 148A (Ta) 10V 4.8mOhm @ 32.5A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5400 pF @ 50 V - 192W (Tc) 150°C (TJ) Through Hole
TK30A06N1,S4X

TK30A06N1,S4X

MOSFET N-CH 60V 30A TO220SIS

Toshiba Semiconductor and Storage

277 0.97

RFQ

TK30A06N1,S4X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 15mOhm @ 15A, 10V 4V @ 200µA 16 nC @ 10 V ±20V 1050 pF @ 30 V - 25W (Tc) 150°C (TJ) Through Hole
TK1R4F04PB,LXGQ

TK1R4F04PB,LXGQ

MOSFET N-CH 40V 160A TO220SM

Toshiba Semiconductor and Storage

1,000 2.86

RFQ

TK1R4F04PB,LXGQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Ta) 6V, 10V 1.9mOhm @ 80A, 6V 3V @ 500µA 103 nC @ 10 V ±20V 5500 pF @ 10 V - 205W (Tc) 175°C Surface Mount
TK750A60F,S4X

TK750A60F,S4X

MOSFET N-CH 600V 10A TO220SIS

Toshiba Semiconductor and Storage

150 1.84

RFQ

TK750A60F,S4X

Datasheet

Tube U-MOSIX Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 750mOhm @ 5A, 10V 4V @ 1mA 30 nC @ 10 V ±30V 1130 pF @ 300 V - 40W (Tc) 150°C Through Hole
TK380A65Y,S4X

TK380A65Y,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

200 1.91

RFQ

TK380A65Y,S4X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 9.7A (Tc) 10V 380mOhm @ 4.9A, 10V 4V @ 360µA 20 nC @ 10 V ±30V 590 pF @ 300 V - 30W (Tc) 150°C Through Hole
TK10A50W,S5X

TK10A50W,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

152 2.01

RFQ

TK10A50W,S5X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 30W (Tc) 150°C Through Hole
TK4R1A10PL,S4X

TK4R1A10PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

3,532 2.14

RFQ

TK4R1A10PL,S4X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 4.5V, 10V 4.1mOhm @ 40A, 10V 2.5V @ 1mA 104 nC @ 10 V ±20V 6320 pF @ 50 V - 54W (Tc) 175°C Through Hole
TK72E08N1,S1X

TK72E08N1,S1X

MOSFET N-CH 80V 72A TO220

Toshiba Semiconductor and Storage

2,741 2.32

RFQ

TK72E08N1,S1X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 72A (Ta) 10V 4.3mOhm @ 36A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5500 pF @ 40 V - 192W (Tc) 150°C (TJ) Through Hole
TK10A80E,S4X

TK10A80E,S4X

MOSFET N-CH 800V 10A TO220SIS

Toshiba Semiconductor and Storage

3,656 2.53

RFQ

TK10A80E,S4X

Datasheet

Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Ta) 10V 1Ohm @ 5A, 10V 4V @ 1mA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
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