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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK100E08N1,S1X

TK100E08N1,S1X

MOSFET N-CH 80V 100A TO220

Toshiba Semiconductor and Storage

2,998 3.79

RFQ

TK100E08N1,S1X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Ta) 10V 3.2mOhm @ 50A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 9000 pF @ 40 V - 255W (Tc) 150°C (TJ) Through Hole
TK16J60W5,S1VQ

TK16J60W5,S1VQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,758 4.96

RFQ

TK16J60W5,S1VQ

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 230mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C Through Hole
TK20J60W,S1VE

TK20J60W,S1VE

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,289 5.10

RFQ

TK20J60W,S1VE

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C Through Hole
TK28N65W5,S1F

TK28N65W5,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,719 6.35

RFQ

TK28N65W5,S1F

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 130mOhm @ 13.8A, 10V 4.5V @ 1.6mA 90 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C Through Hole
TK065N65Z,S1F

TK065N65Z,S1F

MOSFET N-CH 650V 38A TO247

Toshiba Semiconductor and Storage

3,205 6.81

RFQ

TK065N65Z,S1F

Datasheet

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Ta) 10V 65mOhm @ 19A, 10V 4V @ 1.69mA 62 nC @ 10 V ±30V 3650 pF @ 300 V - 270W (Tc) 150°C Through Hole
TK49N65W5,S1F

TK49N65W5,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,442 11.26

RFQ

TK49N65W5,S1F

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 49.2A (Ta) 10V 57mOhm @ 24.6A, 10V 4.5V @ 2.5mA 185 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C Through Hole
TK39J60W5,S1VQ

TK39J60W5,S1VQ

MOSFET N-CH 600V 38.8A TO3P

Toshiba Semiconductor and Storage

2,908 11.57

RFQ

TK39J60W5,S1VQ

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 135 nC @ 10 V ±30V 4100 pF @ 300 V Super Junction 270W (Tc) 150°C (TJ) Through Hole
TK62N60W,S1VF

TK62N60W,S1VF

MOSFET N-CH 600V 61.8A TO247

Toshiba Semiconductor and Storage

3,388 15.62

RFQ

TK62N60W,S1VF

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180 nC @ 10 V ±30V 6500 pF @ 300 V Super Junction 400W (Tc) 150°C (TJ) Through Hole
TK6A80E,S4X

TK6A80E,S4X

MOSFET N-CH 800V 6A TO220SIS

Toshiba Semiconductor and Storage

2,678 1.98

RFQ

TK6A80E,S4X

Datasheet

Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Ta) 10V 1.7Ohm @ 3A, 10V 4V @ 600µA 32 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK56A12N1,S4X

TK56A12N1,S4X

MOSFET N-CH 120V 56A TO220SIS

Toshiba Semiconductor and Storage

2,258 2.19

RFQ

TK56A12N1,S4X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Tc) 10V 7.5mOhm @ 28A, 10V 4V @ 1mA 69 nC @ 10 V ±20V 4200 pF @ 60 V - 45W (Tc) 150°C (TJ) Through Hole
TK65A10N1,S4X

TK65A10N1,S4X

MOSFET N-CH 100V 65A TO220SIS

Toshiba Semiconductor and Storage

3,274 2.93

RFQ

TK65A10N1,S4X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 65A (Tc) 10V 4.8mOhm @ 32.5A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5400 pF @ 50 V - 45W (Tc) 150°C (TJ) Through Hole
TK28A65W,S5X

TK28A65W,S5X

MOSFET N-CH 650V 27.6A TO220SIS

Toshiba Semiconductor and Storage

2,582 5.25

RFQ

TK28A65W,S5X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
TK31Z60X,S1F

TK31Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,553 11.83

RFQ

TK31Z60X,S1F

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C Through Hole
TK62Z60X,S1F

TK62Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

2,802 16.63

RFQ

TK62Z60X,S1F

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 21A, 10V 3.5V @ 3.1mA 135 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C Through Hole
TK7R0E08QM,S1X

TK7R0E08QM,S1X

UMOS10 TO-220AB 80V 7MOHM

Toshiba Semiconductor and Storage

212 1.38

RFQ

TK7R0E08QM,S1X

Datasheet

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 64A (Tc) 6V, 10V 7mOhm @ 32A, 10V 3.5V @ 500µA 39 nC @ 10 V ±20V 2700 pF @ 40 V - 87W (Tc) 175°C Through Hole
TK5R1A08QM,S4X

TK5R1A08QM,S4X

UMOS10 TO-220SIS 80V 5.1MOHM

Toshiba Semiconductor and Storage

2,518 1.67

RFQ

TK5R1A08QM,S4X

Datasheet

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 5.1mOhm @ 35A, 10V 3.5V @ 700µA 54 nC @ 10 V ±20V 3980 pF @ 40 V - 45W (Tc) 175°C Through Hole
TK3R3E08QM,S1X

TK3R3E08QM,S1X

UMOS10 TO-220AB 80V 3.3MOHM

Toshiba Semiconductor and Storage

3,433 2.24

RFQ

TK3R3E08QM,S1X

Datasheet

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.3mOhm @ 50A, 10V 3.5V @ 1.3mA 110 nC @ 10 V ±20V 7670 pF @ 40 V - 230W (Tc) 175°C Through Hole
TK190E65Z,S1X

TK190E65Z,S1X

650V DTMOS VI TO-220 190MOHM

Toshiba Semiconductor and Storage

200 2.92

RFQ

TK190E65Z,S1X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C Through Hole
TK190A65Z,S4X

TK190A65Z,S4X

MOSFET N-CH 650V 15A TO220SIS

Toshiba Semiconductor and Storage

175 3.15

RFQ

TK190A65Z,S4X

Datasheet

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 40W (Tc) 150°C Through Hole
TK155A65Z,S4X

TK155A65Z,S4X

MOSFET N-CH 650V 18A TO220SIS

Toshiba Semiconductor and Storage

2,633 3.29

RFQ

TK155A65Z,S4X

Datasheet

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 155mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 40W (Tc) 150°C Through Hole
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