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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK10A60W,S4X

TK10A60W,S4X

MOSFET N-CH 600V 9.7A TO220

Toshiba Semiconductor and Storage

2,420 1.76

RFQ

TK10A60W,S4X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 720 pF @ 300 V - 30W (Tc) - Through Hole
TK16V60W5,LVQ

TK16V60W5,LVQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage

2,063 1.70

RFQ

TK16V60W5,LVQ

Datasheet

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 245mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 139W (Tc) 150°C Surface Mount
TK14V65W,LQ

TK14V65W,LQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage

3,054 1.71

RFQ

TK14V65W,LQ

Datasheet

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 280mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 139W (Tc) 150°C Surface Mount
TK9A55DA(STA4,Q,M)

TK9A55DA(STA4,Q,M)

MOSFET N-CH 550V 8.5A TO220SIS

Toshiba Semiconductor and Storage

2,868 1.79

RFQ

TK9A55DA(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 8.5A (Ta) 10V 860mOhm @ 4.3A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
TK9A60D(STA4,Q,M)

TK9A60D(STA4,Q,M)

MOSFET N-CH 600V 9A TO220SIS

Toshiba Semiconductor and Storage

2,953 1.79

RFQ

TK9A60D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 830mOhm @ 4.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK11A50D(STA4,Q,M)

TK11A50D(STA4,Q,M)

MOSFET N-CH 500V 11A TO220SIS

Toshiba Semiconductor and Storage

3,195 1.92

RFQ

TK11A50D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Ta) 10V 600mOhm @ 5.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK12A50W,S5X

TK12A50W,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

3,936 1.88

RFQ

TK12A50W,S5X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C Through Hole
TK7A65D(STA4,Q,M)

TK7A65D(STA4,Q,M)

MOSFET N-CH 650V 7A TO220SIS

Toshiba Semiconductor and Storage

3,060 1.97

RFQ

TK7A65D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 980mOhm @ 3.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK9A65W,S5X

TK9A65W,S5X

MOSFET N-CH 650V 9.3A TO220SIS

Toshiba Semiconductor and Storage

2,368 1.97

RFQ

TK9A65W,S5X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 9.3A (Ta) 10V 500mOhm @ 4.6A, 10V 3.5V @ 350µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
TK12A45D(STA4,Q,M)

TK12A45D(STA4,Q,M)

MOSFET N-CH 450V 12A TO220SIS

Toshiba Semiconductor and Storage

2,124 1.98

RFQ

TK12A45D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 12A (Ta) 10V 520mOhm @ 6A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK6A60W,S4VX

TK6A60W,S4VX

MOSFET N-CH 600V 6.2A TO220SIS

Toshiba Semiconductor and Storage

2,646 2.00

RFQ

TK6A60W,S4VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 750mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
TK8Q60W,S1VQ

TK8Q60W,S1VQ

MOSFET N-CH 600V 8A IPAK

Toshiba Semiconductor and Storage

2,455 2.00

RFQ

TK8Q60W,S1VQ

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 500mOhm @ 4A, 10V 3.7V @ 400µA 18.5 nC @ 10 V ±30V 570 pF @ 300 V Super Junction 80W (Tc) 150°C (TJ) Through Hole
TK13E25D,S1X(S

TK13E25D,S1X(S

MOSFET N-CH 250V 13A TO220-3

Toshiba Semiconductor and Storage

2,151 2.04

RFQ

TK13E25D,S1X(S

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 13A (Ta) 10V 250mOhm @ 6.5A, 10V 3.5V @ 1mA 25 nC @ 10 V ±20V 1100 pF @ 100 V - 102W (Tc) 150°C (TJ) Through Hole
TK10A55D(STA4,Q,M)

TK10A55D(STA4,Q,M)

MOSFET N-CH 550V 10A TO220SIS

Toshiba Semiconductor and Storage

3,302 2.04

RFQ

TK10A55D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 10A (Ta) 10V 720mOhm @ 5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK72E12N1,S1X

TK72E12N1,S1X

MOSFET N CH 120V 72A TO-220

Toshiba Semiconductor and Storage

3,458 2.05

RFQ

TK72E12N1,S1X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 72A (Ta) 10V 4.4mOhm @ 36A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8100 pF @ 60 V - 255W (Tc) 150°C (TJ) Through Hole
TK12A50D(STA4,Q,M)

TK12A50D(STA4,Q,M)

MOSFET N-CH 500V 12A TO220SIS

Toshiba Semiconductor and Storage

3,920 2.19

RFQ

TK12A50D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 520mOhm @ 6A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK13A45D(STA4,Q,M)

TK13A45D(STA4,Q,M)

MOSFET N-CH 450V 13A TO220SIS

Toshiba Semiconductor and Storage

3,337 2.19

RFQ

TK13A45D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 13A (Ta) 10V 460mOhm @ 6.5A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
2SK3700(F)

2SK3700(F)

MOSFET N-CH 900V 5A TO3P

Toshiba Semiconductor and Storage

3,816 2.22

RFQ

2SK3700(F)

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 900 V 5A (Ta) - 2.5Ohm @ 3A, 10V 4V @ 1mA 28 nC @ 10 V - 1150 pF @ 25 V - 150W (Tc) 150°C (TJ) Through Hole
TK12A53D(STA4,Q,M)

TK12A53D(STA4,Q,M)

MOSFET N-CH 525V 12A TO220SIS

Toshiba Semiconductor and Storage

3,670 2.30

RFQ

TK12A53D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 525 V 12A (Ta) 10V 580mOhm @ 6A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK11A55D(STA4,Q,M)

TK11A55D(STA4,Q,M)

MOSFET N-CH 550V 11A TO220SIS

Toshiba Semiconductor and Storage

2,038 2.30

RFQ

TK11A55D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 11A (Ta) 10V 630mOhm @ 5.5A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
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