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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK14A45D(STA4,Q,M)

TK14A45D(STA4,Q,M)

MOSFET N-CH 450V 14A TO220SIS

Toshiba Semiconductor and Storage

2,525 2.69

RFQ

TK14A45D(STA4,Q,M)

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 450 V 14A - 340mOhm @ 7A, 10V - - - - - - - Through Hole
TK14E65W,S1X

TK14E65W,S1X

MOSFET N-CH 650V 13.7A TO220

Toshiba Semiconductor and Storage

3,154 2.72

RFQ

TK14E65W,S1X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
TK12E60W,S1VX

TK12E60W,S1VX

MOSFET N CH 600V 11.5A TO-220

Toshiba Semiconductor and Storage

2,300 2.72

RFQ

TK12E60W,S1VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 110W (Tc) 150°C (TJ) Through Hole
TK10J80E,S1E

TK10J80E,S1E

MOSFET N-CH 800V 10A TO3P

Toshiba Semiconductor and Storage

3,315 2.73

RFQ

TK10J80E,S1E

Datasheet

Tube π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Ta) 10V 1Ohm @ 5A, 10V 4V @ 1mA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 250W (Tc) 150°C (TJ) Through Hole
TK14N65W,S1F

TK14N65W,S1F

MOSFET N-CH 650V 13.7A TO247

Toshiba Semiconductor and Storage

2,047 2.74

RFQ

TK14N65W,S1F

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
TK14A55D(STA4,Q,M)

TK14A55D(STA4,Q,M)

MOSFET N-CH 550V 14A TO220SIS

Toshiba Semiconductor and Storage

3,219 2.81

RFQ

TK14A55D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 14A (Ta) 10V 370mOhm @ 7A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
TK20V60W,LVQ

TK20V60W,LVQ

MOSFET N-CH 600V 20A 4DFN

Toshiba Semiconductor and Storage

2,384 2.83

RFQ

TK20V60W,LVQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 170mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V Super Junction 156W (Tc) 150°C (TJ) Surface Mount
TK22V65X5,LQ

TK22V65X5,LQ

PB-F POWER MOSFET TRANSISTOR DFN

Toshiba Semiconductor and Storage

2,281 2.78

RFQ

TK22V65X5,LQ

Datasheet

Tape & Reel (TR) DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 170mOhm @ 11A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C Surface Mount
TK15A50D(STA4,Q,M)

TK15A50D(STA4,Q,M)

MOSFET N-CH 500V 15A TO220SIS

Toshiba Semiconductor and Storage

2,441 2.88

RFQ

TK15A50D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Ta) 10V 300mOhm @ 7.5A, 10V 4V @ 1mA 40 nC @ 10 V ±30V 2300 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
TK20A60W5,S5VX

TK20A60W5,S5VX

MOSFET N-CH 600V 20A TO220SIS

Toshiba Semiconductor and Storage

2,750 2.91

RFQ

TK20A60W5,S5VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 175mOhm @ 10A, 10V 4.5V @ 1mA 55 nC @ 10 V ±30V 1800 pF @ 300 V - 45W (Tc) 150°C (TJ) Through Hole
TK10E80W,S1X

TK10E80W,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

2,102 2.92

RFQ

TK10E80W,S1X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Ta) 10V 550mOhm @ 4.8A, 10V 4V @ 450µA 19 nC @ 10 V ±20V 1150 pF @ 300 V - 130W (Tc) 150°C Through Hole
TK16G60W,RVQ

TK16G60W,RVQ

MOSFET N CH 600V 15.8A D2PAK

Toshiba Semiconductor and Storage

2,799 3.07

RFQ

TK16G60W,RVQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 130W (Tc) 150°C (TJ) Surface Mount
TK19A45D(STA4,Q,M)

TK19A45D(STA4,Q,M)

MOSFET N-CH 450V 19A TO220SIS

Toshiba Semiconductor and Storage

3,786 3.26

RFQ

TK19A45D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 19A (Ta) 10V 250mOhm @ 9.5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
TK18A50D(STA4,Q,M)

TK18A50D(STA4,Q,M)

MOSFET N-CH 500V 18A TO220SIS

Toshiba Semiconductor and Storage

3,693 3.13

RFQ

TK18A50D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Ta) 10V 270mOhm @ 9A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
TK12A60W,S4VX

TK12A60W,S4VX

MOSFET N-CH 600V 11.5A TO220SIS

Toshiba Semiconductor and Storage

2,471 3.54

RFQ

TK12A60W,S4VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 35W (Tc) 150°C (TJ) Through Hole
TK25E60X5,S1X

TK25E60X5,S1X

MOSFET N-CH 600V 25A TO220

Toshiba Semiconductor and Storage

3,838 3.71

RFQ

TK25E60X5,S1X

Datasheet

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) Through Hole
TK25N60X5,S1F

TK25N60X5,S1F

MOSFET N-CH 600V 25A TO247

Toshiba Semiconductor and Storage

2,779 3.71

RFQ

TK25N60X5,S1F

Datasheet

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 140mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) Through Hole
TK20E60W,S1VX

TK20E60W,S1VX

MOSFET N-CH 600V 20A TO220

Toshiba Semiconductor and Storage

3,915 4.34

RFQ

TK20E60W,S1VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
TK28E65W,S1X

TK28E65W,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

2,316 4.70

RFQ

TK28E65W,S1X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C Through Hole
TK110N65Z,S1F

TK110N65Z,S1F

POWER MOSFET TRANSISTOR TO-247(O

Toshiba Semiconductor and Storage

3,300 4.75

RFQ

TK110N65Z,S1F

Datasheet

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C Through Hole
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