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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK5Q60W,S1VQ

TK5Q60W,S1VQ

MOSFET N CH 600V 5.4A IPAK

Toshiba Semiconductor and Storage

3,923 1.50

RFQ

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Ta) 10V 900mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V Super Junction 60W (Tc) 150°C (TJ) Through Hole
TK14G65W5,RQ

TK14G65W5,RQ

MOSFET N-CH 650V 13.7A D2PAK

Toshiba Semiconductor and Storage

2,935 1.52

RFQ

TK14G65W5,RQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Surface Mount
TK9A45D(STA4,Q,M)

TK9A45D(STA4,Q,M)

MOSFET N-CH 450V 9A TO220SIS

Toshiba Semiconductor and Storage

2,131 1.52

RFQ

TK9A45D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 9A (Ta) 10V 770mOhm @ 4.5A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
TK56E12N1,S1X

TK56E12N1,S1X

MOSFET N CH 120V 56A TO-220

Toshiba Semiconductor and Storage

2,775 1.52

RFQ

TK56E12N1,S1X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Ta) 10V 7mOhm @ 28A, 10V 4V @ 1mA 69 nC @ 10 V ±20V 4200 pF @ 60 V - 168W (Tc) 150°C (TJ) Through Hole
TK6A65W,S5X

TK6A65W,S5X

MOSFET N-CH 650V 5.8A TO220SIS

Toshiba Semiconductor and Storage

3,526 1.54

RFQ

TK6A65W,S5X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 5.8A (Ta) 10V 1Ohm @ 2.9A, 10V 3.5V @ 180µA 11 nC @ 10 V ±30V 390 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
TK16V60W,LVQ

TK16V60W,LVQ

MOSFET N-CH 600V 15.8A 4DFN

Toshiba Semiconductor and Storage

2,303 1.55

RFQ

TK16V60W,LVQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 139W (Tc) 150°C (TJ) Surface Mount
TK8A55DA(STA4,Q,M)

TK8A55DA(STA4,Q,M)

MOSFET N-CH 550V 7.5A TO220SIS

Toshiba Semiconductor and Storage

3,052 1.57

RFQ

TK8A55DA(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 7.5A (Ta) 10V 1.07Ohm @ 3.8A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 800 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
TK8A65W,S5X

TK8A65W,S5X

MOSFET N-CH 650V 7.8A TO220SIS

Toshiba Semiconductor and Storage

2,530 1.58

RFQ

TK8A65W,S5X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 650mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
TK6Q60W,S1VQ

TK6Q60W,S1VQ

MOSFET N-CH 600V 6.2A IPAK

Toshiba Semiconductor and Storage

2,988 1.61

RFQ

TK6Q60W,S1VQ

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 820mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V Super Junction 60W (Tc) 150°C (TJ) Through Hole
TK18A30D,S5X

TK18A30D,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

2,344 1.59

RFQ

TK18A30D,S5X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 300 V 18A (Ta) 10V 139mOhm @ 9A, 10V 3.5V @ 1mA 60 nC @ 10 V ±20V 2600 pF @ 100 V - 45W (Tc) 150°C Through Hole
TK25A20D,S5X

TK25A20D,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

3,173 1.59

RFQ

TK25A20D,S5X

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 25A (Ta) 10V 70mOhm @ 12.5A, 10V 3.5V @ 1mA 60 nC @ 10 V ±20V 2550 pF @ 100 V - 45W (Tc) 150°C Through Hole
TK8Q65W,S1Q

TK8Q65W,S1Q

MOSFET N-CH 650V 7.8A IPAK

Toshiba Semiconductor and Storage

2,947 1.64

RFQ

TK8Q65W,S1Q

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 670mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 80W (Tc) 150°C (TJ) Through Hole
TK11A45D(STA4,Q,M)

TK11A45D(STA4,Q,M)

MOSFET N-CH 450V 11A TO220SIS

Toshiba Semiconductor and Storage

2,396 1.65

RFQ

TK11A45D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 11A (Ta) 10V 620mOhm @ 5.5A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
TK12Q60W,S1VQ

TK12Q60W,S1VQ

MOSFET N CH 600V 11.5A IPAK

Toshiba Semiconductor and Storage

3,297 1.65

RFQ

TK12Q60W,S1VQ

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 100W (Tc) 150°C (TJ) Through Hole
TK10V60W,LVQ

TK10V60W,LVQ

MOSFET N-CH 600V 9.7A 4DFN

Toshiba Semiconductor and Storage

3,395 1.65

RFQ

TK10V60W,LVQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V Super Junction 88.3W (Tc) 150°C (TJ) Surface Mount
TK16G60W5,RVQ

TK16G60W5,RVQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

2,867 1.62

RFQ

TK16G60W5,RVQ

Datasheet

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 230mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C Surface Mount
TK10A50D(STA4,Q,M)

TK10A50D(STA4,Q,M)

MOSFET N-CH 500V 10A TO220SIS

Toshiba Semiconductor and Storage

2,291 1.68

RFQ

TK10A50D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Ta) 10V 720mOhm @ 5A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK7A60W,S4VX

TK7A60W,S4VX

MOSFET N-CH 600V 7A TO220SIS

Toshiba Semiconductor and Storage

2,160 1.71

RFQ

TK7A60W,S4VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
TK7Q60W,S1VQ

TK7Q60W,S1VQ

MOSFET N-CH 600V 7A IPAK

Toshiba Semiconductor and Storage

2,882 1.72

RFQ

TK7Q60W,S1VQ

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 60W (Tc) 150°C (TJ) Through Hole
TK6A65D(STA4,Q,M)

TK6A65D(STA4,Q,M)

MOSFET N-CH 650V 6A TO220SIS

Toshiba Semiconductor and Storage

2,588 2.03

RFQ

TK6A65D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Ta) 10V 1.11Ohm @ 3A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
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