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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK16E60W,S1VX

TK16E60W,S1VX

MOSFET N-CH 600V 15.8A TO220

Toshiba Semiconductor and Storage

2,329 2.31

RFQ

TK16E60W,S1VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 130W (Tc) 150°C (TJ) Through Hole
TK2R9E10PL,S1X

TK2R9E10PL,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

3,959 2.34

RFQ

TK2R9E10PL,S1X

Datasheet

Tube U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Ta) 4.5V, 10V 2.9mOhm @ 50A, 10V 2.5V @ 1mA 161 nC @ 10 V ±20V 9500 pF @ 50 V - 306W (Tc) 175°C Through Hole
TK8A60W,S4VX

TK8A60W,S4VX

MOSFET N-CH 600V 8A TO220SIS

Toshiba Semiconductor and Storage

3,075 2.37

RFQ

TK8A60W,S4VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 500mOhm @ 4A, 10V 3.7V @ 400µA 18.5 nC @ 10 V ±30V 570 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
TK13A50DA(STA4,Q,M

TK13A50DA(STA4,Q,M

MOSFET N-CH 500V 12.5A TO220SIS

Toshiba Semiconductor and Storage

2,711 2.40

RFQ

TK13A50DA(STA4,Q,M

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 12.5A (Ta) 10V 470mOhm @ 6.3A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK14A45DA(STA4,QM)

TK14A45DA(STA4,QM)

MOSFET N-CH 450V 13.5A TO220SIS

Toshiba Semiconductor and Storage

3,152 2.40

RFQ

TK14A45DA(STA4,QM)

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 450 V 13.5A - 410mOhm @ 6.8A, 10V - - - - - - - Through Hole
TK10Q60W,S1VQ

TK10Q60W,S1VQ

MOSFET N-CH 600V 9.7A IPAK

Toshiba Semiconductor and Storage

3,159 2.45

RFQ

TK10Q60W,S1VQ

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 430mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 80W (Tc) 150°C (TJ) Through Hole
TK25V60X,LQ

TK25V60X,LQ

MOSFET N-CH 600V 25A 4DFN

Toshiba Semiconductor and Storage

2,757 2.46

RFQ

TK25V60X,LQ

Datasheet

Tape & Reel (TR) DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 135mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C Surface Mount
TK10A60W,S4VX

TK10A60W,S4VX

MOSFET N-CH 600V 9.7A TO220SIS

Toshiba Semiconductor and Storage

2,974 2.48

RFQ

TK10A60W,S4VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
TK12A55D(STA4,Q,M)

TK12A55D(STA4,Q,M)

MOSFET N-CH 550V 12A TO220SIS

Toshiba Semiconductor and Storage

3,220 2.52

RFQ

TK12A55D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 12A (Ta) 10V 570mOhm @ 6A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK10A80W,S4X

TK10A80W,S4X

MOSFET N-CH 800V 9.5A TO220SIS

Toshiba Semiconductor and Storage

3,937 2.52

RFQ

TK10A80W,S4X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Ta) 10V 550mOhm @ 4.8A, 10V 4V @ 450µA 19 nC @ 10 V ±20V 1150 pF @ 300 V - 40W (Tc) 150°C Through Hole
TK25V60X5,LQ

TK25V60X5,LQ

PB-F POWER MOSFET TRANSISTOR DTM

Toshiba Semiconductor and Storage

2,685 2.46

RFQ

TK25V60X5,LQ

Datasheet

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 150mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C Surface Mount
TK19A50W,S5X

TK19A50W,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

3,921 2.46

RFQ

TK19A50W,S5X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 500 V 18.5A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 40W (Tc) 150°C Through Hole
TK13A55DA(STA4,QM)

TK13A55DA(STA4,QM)

MOSFET N-CH 550V 12.5A TO220SIS

Toshiba Semiconductor and Storage

2,345 2.54

RFQ

TK13A55DA(STA4,QM)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 12.5A (Ta) 10V 480mOhm @ 6.3A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK16A60W,S4X

TK16A60W,S4X

MOSFET N-CH 600V 15.8A TO220

Toshiba Semiconductor and Storage

3,867 2.55

RFQ

TK16A60W,S4X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 40 nC @ 10 V ±30V 1350 pF @ 300 V - 40W (Tc) - Through Hole
TK7E80W,S1X

TK7E80W,S1X

MOSFET N-CH 800V 6.5A TO220

Toshiba Semiconductor and Storage

3,537 2.56

RFQ

TK7E80W,S1X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Ta) 10V 950mOhm @ 3.3A, 10V 4V @ 280µA 13 nC @ 10 V ±20V 700 pF @ 300 V - 110W (Tc) 150°C Through Hole
TK17E65W,S1X

TK17E65W,S1X

MOSFET N-CH 650V 17.3A TO220

Toshiba Semiconductor and Storage

2,258 2.59

RFQ

TK17E65W,S1X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
TK7A80W,S4X

TK7A80W,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

2,655 2.57

RFQ

TK7A80W,S4X

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Ta) 10V 950mOhm @ 3.3A, 10V 4V @ 280µA 13 nC @ 10 V ±20V 700 pF @ 300 V - 35W (Tc) 150°C Through Hole
TK16A60W5,S4VX

TK16A60W5,S4VX

MOSFET N-CH 600V 15.8A TO220SIS

Toshiba Semiconductor and Storage

3,082 2.64

RFQ

TK16A60W5,S4VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 1.5mA 43 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 40W (Tc) 150°C (TJ) Through Hole
TK12A60D(STA4,Q,M)

TK12A60D(STA4,Q,M)

MOSFET N-CH 600V 12A TO220SIS

Toshiba Semiconductor and Storage

3,736 2.68

RFQ

TK12A60D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 550mOhm @ 6A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK13A50D(STA4,Q,M)

TK13A50D(STA4,Q,M)

MOSFET N-CH 500V 13A TO220SIS

Toshiba Semiconductor and Storage

2,353 2.69

RFQ

TK13A50D(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Ta) 10V 400mOhm @ 6.5A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
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