PLUS Member
Cart
All Categories
Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK33S10N1L,LQ

TK33S10N1L,LQ

MOSFET N-CH 100V 33A DPAK

Toshiba Semiconductor and Storage

2,213 1.80

RFQ

TK33S10N1L,LQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Ta) 4.5V, 10V 9.7mOhm @ 16.5A, 10V 2.5V @ 500µA 33 nC @ 10 V ±20V 2250 pF @ 10 V - 125W (Tc) 175°C Surface Mount
TK9P65W,RQ

TK9P65W,RQ

MOSFET N-CH 650V 9.3A DPAK

Toshiba Semiconductor and Storage

3,738 0.84

RFQ

TK9P65W,RQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 9.3A (Ta) 10V 560mOhm @ 4.6A, 10V 3.5V @ 350µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 80W (Tc) 150°C (TJ) Surface Mount
TJ50S06M3L(T6L1,NQ

TJ50S06M3L(T6L1,NQ

MOSFET P-CH 60V 50A DPAK

Toshiba Semiconductor and Storage

2,474 0.86

RFQ

TJ50S06M3L(T6L1,NQ

Datasheet

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 50A (Ta) 6V, 10V 13.8mOhm @ 25A, 10V 3V @ 1mA 124 nC @ 10 V +10V, -20V 6290 pF @ 10 V - 90W (Tc) 175°C (TJ) Surface Mount
TK8P65W,RQ

TK8P65W,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

2,988 0.84

RFQ

TK8P65W,RQ

Datasheet

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 670mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 80W (Tc) 150°C Surface Mount
TK11P65W,RQ

TK11P65W,RQ

MOSFET N-CH 650V 11.1A DPAK

Toshiba Semiconductor and Storage

2,652 0.88

RFQ

TK11P65W,RQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 11.1A (Ta) 10V 440mOhm @ 5.5A, 10V 3.5V @ 450µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 100W (Tc) 150°C (TJ) Surface Mount
TK6P60W,RVQ

TK6P60W,RVQ

MOSFET N CH 600V 6.2A DPAK

Toshiba Semiconductor and Storage

2,757 0.89

RFQ

TK6P60W,RVQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 820mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V Super Junction 60W (Tc) 150°C (TJ) Surface Mount
TK12P50W,RQ

TK12P50W,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

3,357 0.88

RFQ

TK12P50W,RQ

Datasheet

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 100W (Tc) 150°C Surface Mount
TK35E08N1,S1X

TK35E08N1,S1X

MOSFET N-CH 80V 55A TO220

Toshiba Semiconductor and Storage

3,573 0.93

RFQ

TK35E08N1,S1X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 55A (Tc) 10V 12.2mOhm @ 17.5A, 10V 4V @ 300µA 25 nC @ 10 V ±20V 1700 pF @ 40 V - 72W (Tc) 150°C (TJ) Through Hole
TK7P60W,RVQ

TK7P60W,RVQ

MOSFET N CH 600V 7A DPAK

Toshiba Semiconductor and Storage

3,481 0.94

RFQ

TK7P60W,RVQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V Super Junction 60W (Tc) 150°C (TJ) Surface Mount
TK46A08N1,S4X

TK46A08N1,S4X

MOSFET N-CH 80V 46A TO220SIS

Toshiba Semiconductor and Storage

3,375 0.94

RFQ

TK46A08N1,S4X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 46A (Tc) 10V 8.4mOhm @ 23A, 10V 4V @ 500µA 37 nC @ 10 V ±20V 2500 pF @ 40 V - 35W (Tc) 150°C (TJ) Through Hole
TK5A45DA(STA4,Q,M)

TK5A45DA(STA4,Q,M)

MOSFET N-CH 450V 4.5A TO220SIS

Toshiba Semiconductor and Storage

3,224 0.95

RFQ

TK5A45DA(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 4.5A (Ta) 10V 1.75Ohm @ 2.3A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
TPH4R606NH,L1Q

TPH4R606NH,L1Q

MOSFET N-CH 60V 32A 8SOP

Toshiba Semiconductor and Storage

2,079 0.92

RFQ

TPH4R606NH,L1Q

Datasheet

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 32A (Ta) 6.5V, 10V 4.6mOhm @ 16A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3965 pF @ 30 V - 1.6W (Ta), 63W (Tc) 150°C (TJ) Surface Mount
TJ60S06M3L(T6L1,NQ

TJ60S06M3L(T6L1,NQ

MOSFET P-CH 60V 60A DPAK

Toshiba Semiconductor and Storage

2,108 0.98

RFQ

TJ60S06M3L(T6L1,NQ

Datasheet

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 60A (Ta) 6V, 10V 11.2mOhm @ 30A, 10V 3V @ 1mA 156 nC @ 10 V +10V, -20V 7760 pF @ 10 V - 100W (Tc) 175°C (TJ) Surface Mount
TK46E08N1,S1X

TK46E08N1,S1X

MOSFET N-CH 80V 80A TO220

Toshiba Semiconductor and Storage

3,054 1.00

RFQ

TK46E08N1,S1X

Datasheet

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 10V 8.4mOhm @ 23A, 10V 4V @ 500µA 37 nC @ 10 V ±20V 2500 pF @ 40 V - 103W (Tc) 150°C (TJ) Through Hole
TK8R2E06PL,S1X

TK8R2E06PL,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

3,976 0.97

RFQ

TK8R2E06PL,S1X

Datasheet

Tube U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.2mOhm @ 25A, 10V 2.5V @ 300µA 28 nC @ 10 V ±20V 1990 pF @ 30 V - 81W (Tc) 175°C Through Hole
TJ90S04M3L,LQ

TJ90S04M3L,LQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

2,693 0.97

RFQ

TJ90S04M3L,LQ

Datasheet

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 90A (Ta) 4.5V, 10V 4.3mOhm @ 45A, 10V 2V @ 1mA 172 nC @ 10 V +10V, -20V 7700 pF @ 10 V - 180W (Tc) 175°C Surface Mount
TK12P60W,RVQ

TK12P60W,RVQ

MOSFET N CH 600V 11.5A DPAK

Toshiba Semiconductor and Storage

2,210 1.01

RFQ

TK12P60W,RVQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 100W (Tc) 150°C (TJ) Surface Mount
TK5Q65W,S1Q

TK5Q65W,S1Q

MOSFET N-CH 650V 5.2A IPAK

Toshiba Semiconductor and Storage

2,867 1.02

RFQ

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Ta) 10V 1.22Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 60W (Tc) 150°C (TJ) Through Hole
TK3A60DA(STA4,Q,M)

TK3A60DA(STA4,Q,M)

MOSFET N-CH 600V 2.5A TO220SIS

Toshiba Semiconductor and Storage

2,558 1.08

RFQ

TK3A60DA(STA4,Q,M)

Datasheet

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Ta) 10V 2.8Ohm @ 1.3A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
TK12V60W,LVQ

TK12V60W,LVQ

MOSFET N-CH 600V 11.5A 4DFN

Toshiba Semiconductor and Storage

3,873 1.09

RFQ

TK12V60W,LVQ

Datasheet

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V Super Junction 104W (Tc) 150°C (TJ) Surface Mount
Total 1042 Records«Prev1... 2728293031323334...53Next»
HOME

HOME

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER