Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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VN0808L-GMOSFET N-CH 80V 300MA TO92-3 |
2,521 | 1.56 |
RFQ |
![]() Datasheet |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 300mA (Tj) | 10V | 4Ohm @ 1A, 10V | 2V @ 1mA | - | ±30V | 50 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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VN3205N3-GMOSFET N-CH 50V 1.2A TO92-3 |
2,691 | 1.74 |
RFQ |
![]() Datasheet |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 1.2A (Tj) | 4.5V, 10V | 300mOhm @ 3A, 10V | 2.4V @ 10mA | - | ±20V | 300 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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TP0604N3-GMOSFET P-CH 40V 430MA TO92-3 |
642 | 1.80 |
RFQ |
![]() Datasheet |
Bag | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 430mA (Tj) | 5V, 10V | 2Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 150 pF @ 20 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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DN2540N5-GMOSFET N-CH 400V 500MA TO220-3 |
2,817 | 1.84 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 500mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300 pF @ 25 V | Depletion Mode | 15W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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VP0808L-GMOSFET P-CH 80V 280MA TO92-3 |
2,421 | 2.00 |
RFQ |
![]() Datasheet |
Bag | - | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 280mA (Tj) | 10V | 5Ohm @ 1A, 10V | 4.5V @ 1mA | - | ±30V | 150 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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VN2210N3-GMOSFET N-CH 100V 1.2A TO92-3 |
2,077 | 2.60 |
RFQ |
![]() Datasheet |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.2A (Tj) | 5V, 10V | 350mOhm @ 4A, 10V | 2.4V @ 10mA | - | ±20V | 500 pF @ 25 V | - | 740mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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DN3765K4-GMOSFET N-CH 650V 300MA TO252-3 |
2,236 | 3.43 |
RFQ |
![]() Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 300mA (Tj) | 0V | 8Ohm @ 150mA, 0V | - | - | ±20V | 825 pF @ 25 V | Depletion Mode | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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APT24F50BMOSFET N-CH 500V 24A TO247 |
2,248 | 4.99 |
RFQ |
![]() Datasheet |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 24A (Tc) | 10V | 240mOhm @ 11A, 10V | 5V @ 1mA | 90 nC @ 10 V | ±30V | 3630 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT7M120BMOSFET N-CH 1200V 8A TO247 |
2,659 | 5.93 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 8A (Tc) | 10V | 2.5Ohm @ 3A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2565 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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MSC750SMA170B4TRANS SJT 1700V TO247-4 |
3,603 | 6.00 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 7A (Tc) | 20V | 940mOhm @ 2.5A, 20V | 3.25V @ 100µA (Typ) | 11 nC @ 20 V | +23V, -10V | 184 pF @ 1360 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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MSC750SMA170STRANS SJT 1700V D3PAK |
3,368 | 6.61 |
RFQ |
![]() Datasheet |
Tube | - | Active | - | SiCFET (Silicon Carbide) | 1700 V | 6A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount |
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APT42F50BMOSFET N-CH 500V 42A TO247 |
3,465 | 10.53 |
RFQ |
![]() Datasheet |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 42A (Tc) | 10V | 130mOhm @ 21A, 10V | 5V @ 1mA | 170 nC @ 10 V | ±30V | 6810 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT106N60B2C6MOSFET N-CH 600V 106A T-MAX |
2,325 | 17.22 |
RFQ |
![]() Datasheet |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 106A (Tc) | 10V | 35mOhm @ 53A, 10V | 3.5V @ 3.4mA | 308 nC @ 10 V | ±20V | 8390 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT10090BLLGMOSFET N-CH 1000V 12A TO247 |
2,748 | 17.46 |
RFQ |
![]() Datasheet |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 950mOhm @ 6A, 10V | 5V @ 1mA | 71 nC @ 10 V | ±30V | 1969 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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MSC040SMA120BSICFET N-CH 1200V 66A TO247-3 |
3,366 | 25.87 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.7V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 323W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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MSC040SMA120B4SICFET N-CH 1200V 66A TO247-4 |
154 | 26.64 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.6V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 323W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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MSC080SMA120JSICFET N-CH 1.2KV 35A SOT227 |
3,718 | 30.76 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37A (Tc) | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Chassis Mount |
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MSC400SMA330B4MOSFET SIC 3300 V 400 MOHM TO-24 |
2,390 | 34.29 |
RFQ |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 11A (Tc) | 20V | 520mOhm @ 5A, 20V | 2.97V @ 1mA | 37 nC @ 20 V | +23V, -10V | 579 pF @ 2400 V | - | 131W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
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MSC035SMA170B4MOSFET SIC 1700V 35 MOHM TO-247- |
2,620 | 43.01 |
RFQ |
![]() Datasheet |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 68A (Tc) | 20V | 45mOhm @ 30A, 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | +23V, -10V | 3300 pF @ 1000 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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MSC035SMA170BTRANS SJT 1700V TO247 |
3,268 | 43.33 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 68A (Tc) | 20V | 45mOhm @ 30A, 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | +23V, -10V | 3300 pF @ 1000 V | - | 370W (Tc) | -60°C ~ 175°C (TJ) | Through Hole |