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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHFR220-GE3MOSFET N-CH 200V 4.8A DPAK |
2,894 | 0.30 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIAA00DJ-T1-GE3MOSFET N-CH 25V 20.1A/40A PPAK |
3,263 | 0.30 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 20.1A (Ta), 40A (Tc) | 4.5V, 10V | 5.6mOhm @ 15A, 10V | 2.5V @ 250µA | 24 nC @ 10 V | +16V, -12V | 1090 pF @ 12.5 V | - | 3.5W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHLR120-GE3MOSFET N-CH 100V 7.7A DPAK |
2,000 | 0.31 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12 nC @ 5 V | ±10V | 490 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHFR9120-GE3MOSFET P-CH 100V 5.6A DPAK |
3,973 | 0.32 |
RFQ |
Datasheet |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SISH114ADN-T1-GE3MOSFET N-CH 30V 18A/35A PPAK |
3,885 | 0.80 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 35A (Tc) | 4.5V, 10V | 7.5mOhm @ 18A, 10V | 2.5V @ 250µA | 32 nC @ 10 V | ±20V | 1230 pF @ 15 V | - | 3.7W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIS415DNT-T1-GE3MOSFET P-CH 20V 35A PPAK1212-8 |
2,872 | 0.33 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 2.5V, 10V | 4mOhm @ 20A, 10V | 1.5V @ 250µA | 180 nC @ 10 V | ±12V | 5460 pF @ 10 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIS698DN-T1-GE3MOSFET N-CH 100V 6.9A PPAK1212-8 |
2,468 | 0.33 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.9A (Tc) | 6V, 10V | 195mOhm @ 2.5A, 10V | 3.5V @ 250µA | 8 nC @ 10 V | ±20V | 210 pF @ 50 V | - | 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHFL9014TR-GE3MOSFET P-CH 60V 1.8A SOT223 |
3,722 | 0.33 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.8A (Tc) | 10V | 500mOhm @ 1.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHFR9310-GE3MOSFET P-CH 400V 1.8A DPAK |
2,684 | 0.33 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 400 V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI2314EDS-T1-GE3MOSFET N-CH 20V 3.77A SOT23-3 |
3,931 | 0.35 |
RFQ |
Datasheet |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 3.77A (Ta) | 1.8V, 4.5V | 33mOhm @ 5A, 4.5V | 950mV @ 250µA | 14 nC @ 4.5 V | ±12V | - | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI3447CDV-T1-E3MOSFET P-CH 12V 7.8A 6TSOP |
2,004 | 0.36 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 7.8A (Tc) | 4.5V | 36mOhm @ 6.3A, 4.5V | 1V @ 250µA | 30 nC @ 8 V | ±8V | 910 pF @ 6 V | - | 2W (Ta), 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIA108DJ-T1-GE3MOSFET N-CH 80V 6.6A/12A PPAK |
3,142 | 0.37 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 6.6A (Ta), 12A (Tc) | 7.5V, 10V | 38mOhm @ 4A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 545 pF @ 40 V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHFR320-GE3MOSFET N-CH 400V 3.1A DPAK |
3,156 | 0.37 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHFR1N60ATR-GE3MOSFET N-CH 600V 1.4A DPAK |
3,318 | 0.37 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14 nC @ 10 V | ±30V | 229 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHFR9024TR-GE3MOSFET P-CH 60V 8.8A DPAK |
2,738 | 0.37 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.8A (Tc) | 10V | 280mOhm @ 5.3A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIS444DN-T1-GE3MOSFET N-CH 30V 35A PPAK1212-8 |
3,796 | 0.38 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 3.3mOhm @ 10A, 10V | 2.3V @ 250µA | 102 nC @ 10 V | ±20V | 3065 pF @ 15 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIR474DP-T1-RE3MOSFET N-CH 30V 20A PPAK SO-8 |
2,701 | 0.38 |
RFQ |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 4.5V, 10V | 9.5mOhm @ 10A, 10V | 2.2V @ 250µA | 27 nC @ 10 V | ±20V | 985 pF @ 15 V | - | 29.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
SIHU3N50D-GE3MOSFET N-CH 500V 3A TO251 |
3,643 | 0.38 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3A (Tc) | 10V | 3.2Ohm @ 2.5A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 175 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHU3N50DA-GE3MOSFET N-CHANNEL 500V 3A IPAK |
3,568 | 0.38 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3A (Tc) | 10V | 3.2Ohm @ 1.5A, 10V | 4.5V @ 250µA | 12 nC @ 10 V | ±30V | 177 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHD3N50D-E3MOSFET N-CH 500V 3A DPAK |
3,669 | 0.39 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3A (Tc) | 10V | 3.2Ohm @ 2.5A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 175 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
