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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHB055N60EF-GE3EF SERIES POWER MOSFET WITH FAST |
3,365 | 6.75 |
RFQ |
Datasheet |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 46A (Tc) | 10V | 55mOhm @ 26.5A, 10V | 5V @ 250µA | 95 nC @ 10 V | ±30V | 3707 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHP065N60E-BE3N-CHANNEL 600V |
2,053 | 7.61 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 2700 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SQW44N65EF-GE3E SERIES POWER MOSFET WITH FAST |
2,578 | 8.03 |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101, E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 73mOhm @ 22A, 10V | 4V @ 250µA | 266 nC @ 10 V | ±30V | 5858 pF @ 100 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
SIHK045N60EF-T1GE3E SERIES POWER MOSFET WITH FAST |
2,010 | 10.96 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 52mOhm @ 17A, 10V | 5V @ 250µA | 105 nC @ 10 V | ±30V | 4685 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SQW61N65EF-GE3MOSFET N-CH 650V 62A TO247AD |
3,554 | 12.90 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101, E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 62A (Tc) | - | 52mOhm @ 32A, 10V | 4V @ 250µA | 344 nC @ 10 V | ±30V | 7379 pF @ 100 V | - | 625W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
SIHG026N60EF-GE3EF SERIES POWER MOSFET WITH FAST |
3,565 | 14.98 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 95A (Tc) | 10V | 26mOhm @ 38A, 10V | 5V @ 250µA | 227 nC @ 10 V | ±30V | 7926 pF @ 100 V | - | 521W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIUD402ED-T1-GE3MOSFET N-CH 20V 1A PPAK 0806 |
3,433 | 0.08 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 1A (Ta) | 1.5V, 4.5V | 730mOhm @ 200mA, 4.5V | 900mV @ 250µA | 1.2 nC @ 8 V | ±8V | 16 pF @ 10 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI1078X-T1-GE3MOSFET N-CH 30V 1.02A SOT563F |
3,283 | 0.11 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.02A (Tc) | 2.5V, 10V | 142mOhm @ 1A, 10V | 1.5V @ 250µA | 3 nC @ 4.5 V | ±12V | 110 pF @ 15 V | - | 240mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIS822DNT-T1-GE3MOSFET N-CH 30V 12A PPAK1212-8 |
3,111 | 0.12 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Tc) | 4.5V, 10V | 24mOhm @ 7.8A, 10V | 2.5V @ 250µA | 12 nC @ 10 V | ±20V | 435 pF @ 15 V | - | 15.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI1079X-T1-GE3MOSFET P-CH 30V 1.44A SC89-6 |
3,010 | 0.13 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.44A (Ta) | 2.5V, 4.5V | 100mOhm @ 1.4A, 4.5V | 1.5V @ 250µA | 26 nC @ 10 V | ±12V | 750 pF @ 15 V | - | 330mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIA483ADJ-T1-GE3MOSFET P-CH 30V 10.6A/12A PPAK |
2,081 | 0.15 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10.6A (Ta), 12A (Tc) | 4.5V, 10V | 20mOhm @ 5A, 10V | 2.5V @ 250µA | 26 nC @ 10 V | +16V, -20V | 950 pF @ 15 V | - | 3.4W (Ta), 17.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIS429DNT-T1-GE3MOSFET P-CH 30V 20A PPAK1212-8 |
3,865 | 0.15 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 4.5V, 10V | 21mOhm @ 10.5A, 10V | 3V @ 250µA | 50 nC @ 10 V | ±20V | 1350 pF @ 15 V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI8481DB-T1-E1MOSFET P-CH 20V 9.7A 4MICRO FOOT |
3,503 | 0.15 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen III | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 9.7A (Tc) | 1.8V, 4.5V | 21mOhm @ 3A, 4.5V | 900mV @ 250µA | 47 nC @ 4.5 V | ±8V | 2500 pF @ 10 V | - | 2.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIA465EDJ-T1-GE3MOSFET P-CH 20V 12A PPAK SC70-6 |
3,360 | 0.17 |
RFQ |
Datasheet |
Tape & Reel (TR) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Tc) | 2.5V, 4.5V | 16.5mOhm @ 7A, 4.5V | 1.2V @ 250µA | 72 nC @ 10 V | ±12V | 2130 pF @ 10 V | - | 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIA472EDJ-T1-GE3MOSFET N-CH 30V 12A PPAK SC70-6 |
3,371 | 0.17 |
RFQ |
Datasheet |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Tc) | 2.5V, 4.5V | 20mOhm @ 10.8A, 4.5V | 1.5V @ 250µA | 36 nC @ 10 V | ±12V | 1265 pF @ 15 V | - | 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
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SIS472ADN-T1-GE3MOSFET N-CH 30V 24A PPAK1212-8 |
2,523 | 0.18 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.4V @ 250µA | 44 nC @ 10 V | ±20V | 1515 pF @ 15 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIRA96DP-T1-GE3MOSFET N-CH 30V 16A PPAK SO-8 |
3,275 | 0.18 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Tc) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2.2V @ 250µA | 15 nC @ 4.5 V | +20V, -16V | 1385 pF @ 15 V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIA430DJT-T4-GE3MOSFET N-CH 20V 12A/12A PPAK |
3,599 | 0.19 |
RFQ |
Datasheet |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Ta), 12A (Tc) | 4.5V, 10V | 13.5mOhm @ 7A, 10V | 3V @ 250µA | 18 nC @ 10 V | ±20V | 800 pF @ 10 V | - | 3.5W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIRA88BDP-T1-GE3MOSFET N-CH 30V 19A/40A PPAK SO8 |
3,253 | 0.19 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 40A (Tc) | 4.5V, 10V | 6.83mOhm @ 10A, 10V | 2.4V @ 250µA | 19 nC @ 10 V | +20V, -16V | 680 pF @ 15 V | - | 3.8W (Ta), 17W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI1330EDL-T1-GE3MOSFET N-CH 60V 240MA SC70-3 |
3,467 | 0.19 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240mA (Ta) | 3V, 10V | 2.5Ohm @ 250mA, 10V | 2.5V @ 250µA | 0.6 nC @ 4.5 V | ±20V | - | - | 280mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
