PLUS Member
Cart
All Categories
Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1SS424(TPL3,F)

1SS424(TPL3,F)

DIODE SCHOTTKY 20V 200MA SSM

Toshiba Semiconductor and Storage

3,610 0.23

RFQ

1SS424(TPL3,F)

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 20pF @ 0V, 1MHz - 50 µA @ 20 V 20 V 200mA 125°C (Max) 500 mV @ 200 mA
1SS387,L3F

1SS387,L3F

DIODE GEN PURP 80V 100MA ESC

Toshiba Semiconductor and Storage

3,644 0.25

RFQ

1SS387,L3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 3pF @ 0V, 1MHz 4 ns 500 nA @ 80 V 80 V 100mA 125°C (Max) 1.2 V @ 100 mA
1SS416,L3M

1SS416,L3M

DIODE SCHOTTKY 30V 100MA SOD923

Toshiba Semiconductor and Storage

10,000 0.29

RFQ

1SS416,L3M

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 15pF @ 0V, 1MHz - 50 µA @ 30 V 30 V 100mA 125°C (Max) 500 mV @ 100 mA
1SS413,L3M

1SS413,L3M

DIODE SCHOTTKY 20V 50MA FSC

Toshiba Semiconductor and Storage

2,038 0.29

RFQ

1SS413,L3M

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 3.9pF @ 0V, 1MHz - 500 nA @ 20 V 20 V 50mA 125°C (Max) 550 mV @ 50 mA
1SS427,L3M

1SS427,L3M

DIODE GEN PURP 80V 100MA SOD923

Toshiba Semiconductor and Storage

30,000 0.29

RFQ

1SS427,L3M

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 0.3pF @ 0V, 1MHz 1.6 ns 500 nA @ 80 V 80 V 100mA -55°C ~ 150°C 1.2 V @ 100 mA
1SS401(TE85L,F)

1SS401(TE85L,F)

DIODE SCHOTTKY 20V 300MA SC70

Toshiba Semiconductor and Storage

2,184 0.29

RFQ

1SS401(TE85L,F)

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 46pF @ 0V, 1MHz - 50 µA @ 20 V 20 V 300mA 125°C (Max) 450 mV @ 300 mA
1SS403E,L3F

1SS403E,L3F

SINGLE SWITCHING DIODE 200V 0.1A

Toshiba Semiconductor and Storage

3,992 0.35

RFQ

1SS403E,L3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 3pF @ 0V, 1MHz 60 ns 1 µA @ 200 V 200 V 100mA 150°C (Max) 1.2 V @ 100 mA
1SS322(TE85L,F)

1SS322(TE85L,F)

SMALL-SIGNAL SCHOTTKY BARRIER DI

Toshiba Semiconductor and Storage

3,598 0.30

RFQ

1SS322(TE85L,F)

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 18pF @ 0V, 1MHz - 5 µA @ 40 V 40 V 100mA 125°C (Max) 600 mV @ 100 mA
CUS05S30,H3F

CUS05S30,H3F

DIODE SCHOTTKY 30V 500MA USC

Toshiba Semiconductor and Storage

2,938 0.33

RFQ

CUS05S30,H3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 55pF @ 0V, 1MHz - 150 µA @ 10 V 30 V 500mA 125°C (Max) 340 mV @ 100 mA
1SS413CT,L3F

1SS413CT,L3F

DIODE SCHOTTKY 20V 50MA SOD882

Toshiba Semiconductor and Storage

2,651 0.32

RFQ

1SS413CT,L3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 3.9pF @ 0V, 1MHz - 500 nA @ 20 V 20 V 50mA -55°C ~ 125°C 550 mV @ 50 mA
CUS05S40,H3F

CUS05S40,H3F

DIODE SCHOTTKY 40V 500MA USC

Toshiba Semiconductor and Storage

3,093 0.35

RFQ

CUS05S40,H3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 42pF @ 0V, 1MHz - 30 µA @ 10 V 40 V 500mA 125°C (Max) 350 mV @ 100 mA
CTS05S40,L3F

CTS05S40,L3F

DIODE SCHOTTKY 40V 500MA CST2

Toshiba Semiconductor and Storage

3,886 0.36

RFQ

CTS05S40,L3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 42pF @ 0V, 1MHz - 30 µA @ 10 V 40 V 500mA 125°C (Max) 350 mV @ 100 mA
CMF05(TE12L,Q,M)

CMF05(TE12L,Q,M)

DIODE GEN PURP 1KV 500MA MFLAT

Toshiba Semiconductor and Storage

3,560 0.56

RFQ

CMF05(TE12L,Q,M)

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 100 ns 50 µA @ 800 V 1000 V 500mA -40°C ~ 125°C 2.7 V @ 500 mA
CMS11(TE12L,Q,M)

CMS11(TE12L,Q,M)

DIODE SCHOTTKY 40V 2A MFLAT

Toshiba Semiconductor and Storage

3,163 0.64

RFQ

CMS11(TE12L,Q,M)

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 95pF @ 10V, 1MHz - 500 µA @ 40 V 40 V 2A -40°C ~ 150°C 550 mV @ 2 A
CMS05(TE12L,Q,M)

CMS05(TE12L,Q,M)

DIODE SCHOTTKY 30V 5A MFLAT

Toshiba Semiconductor and Storage

3,076 0.83

RFQ

CMS05(TE12L,Q,M)

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 330pF @ 10V, 1MHz - 800 µA @ 30 V 30 V 5A -40°C ~ 150°C 450 mV @ 5 A
TRS2E65F,S1Q

TRS2E65F,S1Q

PB-F DIODE TO-220-2L IF=2A VRRM=

Toshiba Semiconductor and Storage

3,981 1.13

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 8.7pF @ 650V, 1MHz 0 ns 20 µA @ 650 V 650 V 2A (DC) 175°C (Max) 1.6 V @ 2 A
TRS6E65F,S1Q

TRS6E65F,S1Q

DODE SCHOTTKY 650V TO220

Toshiba Semiconductor and Storage

2,670 2.98

RFQ

TRS6E65F,S1Q

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 22pF @ 650V, 1MHz 0 ns 30 µA @ 650 V 650 V 6A (DC) 175°C (Max) 1.6 V @ 6 A
1SS187,LF

1SS187,LF

DIODE GEN PURP 80V 100MA S-MINI

Toshiba Semiconductor and Storage

3,252 0.04

RFQ

1SS187,LF

Datasheet

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz 4 ns 500 nA @ 80 V 80 V 100mA 125°C (Max) 1.2 V @ 100 mA
CTS05F40,L3F

CTS05F40,L3F

DIODE SCHOTTKY 40V 500MA CST2

Toshiba Semiconductor and Storage

2,522 0.04

RFQ

CTS05F40,L3F

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 28pF @ 0V, 1MHz - 15 µA @ 40 V 40 V 500mA 150°C (Max) 810 mV @ 500 mA
TRS10E65F,S1Q

TRS10E65F,S1Q

DODE SCHOTTKY 650V TO220

Toshiba Semiconductor and Storage

2,123 4.90

RFQ

TRS10E65F,S1Q

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 36pF @ 650V, 1MHz 0 ns 50 µA @ 650 V 650 V 10A (DC) 175°C (Max) 1.6 V @ 10 A
Total 248 Records«Prev1234567...13Next»
HOME

HOME

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER