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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
CRS09(TE85L)

CRS09(TE85L)

DIODE SCHOTTKY 30V 1.5A SFLAT

Toshiba Semiconductor and Storage

3,582 0.00

RFQ

CRS09(TE85L)

Datasheet

Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 50 µA @ 30 V 30 V 1.5A -40°C ~ 150°C 460 mV @ 1.5 A
CRS11(TE85L)

CRS11(TE85L)

DIODE SCHOTTKY 30V 1A SFLAT

Toshiba Semiconductor and Storage

3,643 0.00

RFQ

CRS11(TE85L)

Datasheet

Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 1.5 mA @ 30 V 30 V 1A -40°C ~ 125°C 360 mV @ 1 A
1SS389,H3F

1SS389,H3F

DIODE SCHOTTKY 40V 100MA ESC

Toshiba Semiconductor and Storage

2,821 0.00

RFQ

1SS389,H3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Obsolete Surface Mount 25pF @ 0V, 1MHz - 5 µA @ 10 V 40 V 100mA 125°C (Max) 600 mV @ 50 mA
1SS370TE85LF

1SS370TE85LF

DIODE GEN PURP 200V 100MA SC70

Toshiba Semiconductor and Storage

2,911 0.00

RFQ

1SS370TE85LF

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 3pF @ 0V, 1MHz 60 ns 1 µA @ 200 V 200 V 100mA 125°C (Max) 1.2 V @ 100 mA
TRS6E65C,S1AQ

TRS6E65C,S1AQ

DIODE SCHOTTKY 650V 6A TO220-2L

Toshiba Semiconductor and Storage

2,562 0.00

RFQ

TRS6E65C,S1AQ

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 35pF @ 650V, 1MHz 0 ns 90 µA @ 650 V 650 V 6A (DC) 175°C (Max) 1.7 V @ 6 A
TRS8E65C,S1Q

TRS8E65C,S1Q

DIODE SCHOTTKY 650V 8A TO220-2L

Toshiba Semiconductor and Storage

2,008 0.00

RFQ

TRS8E65C,S1Q

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 44pF @ 650V, 1MHz 0 ns 90 µA @ 650 V 650 V 8A (DC) 175°C (Max) 1.7 V @ 8 A
TRS12E65C,S1Q

TRS12E65C,S1Q

DIODE SCHOTTKY 650V 12A TO220-2L

Toshiba Semiconductor and Storage

3,084 0.00

RFQ

TRS12E65C,S1Q

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 65pF @ 650V, 1MHz 0 ns 90 µA @ 170 V 650 V 12A (DC) 175°C (Max) 1.7 V @ 12 A
CRG09A,LQ(M

CRG09A,LQ(M

DIODE GEN PURP 400V 1A SFLAT

Toshiba Semiconductor and Storage

2,366 0.00

RFQ

CRG09A,LQ(M

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 5 µA @ 400 V 400 V 1A 150°C (Max) 1.1 V @ 700 mA
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