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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
C3M0120065J650V 120M SIC MOSFET |
982 | 8.47 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 21A (Tc) | 15V | 157mOhm @ 6.76A, 15V | 3.6V @ 1.86mA | 26 nC @ 15 V | +19V, -8V | 640 pF @ 400 V | - | 86W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount |
|
E3M0120090J900V 120M AUTOMOTIVE SIC MOSFET |
1,299 | 11.70 |
RFQ |
Datasheet |
Tube | E-Series, Automotive | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 18 nC @ 15 V | +15V, -4V | 414 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
E3M0060065D60M 650V SIC AUTOMOTIVE MOSFET |
410 | 14.45 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 37A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 3.6mA | 46 nC @ 15 V | +19V, -8V | 1170 pF @ 600 V | - | 131W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
E3M0060065K60M 650V SIC AUTOMOTIVE MOSFET |
450 | 15.10 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 37A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 3.6mA | 49 nC @ 15 V | +19V, -8V | 1170 pF @ 600 V | - | 131W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
E3M0075120K1200V AUTOMOTIVE SIC 75MOHM FET |
370 | 18.73 |
RFQ |
Datasheet |
Tube | E-Series, Automotive | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 32A (Tc) | 15V | 97.5mOhm @ 17.9A, 15V | 3.6V @ 5mA | 55 nC @ 15 V | +19V, -8V | 1480 pF @ 1000 V | - | 145W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
C3M0032120DSICFET N-CH 1200V 63A TO247-3 |
416 | 32.58 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | 114 nC @ 15 V | +15V, -4V | 3357 pF @ 1000 V | - | 283W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
|
E3M0280090DSICFET N-CH 900V 11.5A TO247-3 |
528 | 7.12 |
RFQ |
Datasheet |
Tube | E-Series, Automotive | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 900 V | 11.5A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5 nC @ 15 V | +18V, -8V | 150 pF @ 600 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
E3M0120090DSICFET N-CH 900V 23A TO247-3 |
411 | 11.40 |
RFQ |
Datasheet |
Tube | E-Series, Automotive | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 900 V | 23A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3 nC @ 15 V | +18V, -8V | 350 pF @ 600 V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C3M0120065D650V 120M SIC MOSFET |
2,972 | 8.47 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 22A (Tc) | 15V | 157mOhm @ 6.76A, 15V | 3.6V @ 1.86mA | 28 nC @ 15 V | +19V, -8V | 640 pF @ 400 V | - | 98W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
C3M0065090J-TRSICFET N-CH 900V 35A D2PAK-7 |
2,240 | 16.28 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30 nC @ 15 V | +19V, -8V | 660 pF @ 600 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
C3M0075120KSICFET N-CH 1200V 30A TO247-4L |
2,058 | 17.72 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51 nC @ 15 V | +19V, -8V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C2M0080120DSICFET N-CH 1200V 36A TO247-3 |
809 | 24.12 |
RFQ |
Datasheet |
Bulk | C2M™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 20V | 98mOhm @ 20A, 20V | 4V @ 5mA | 62 nC @ 5 V | +25V, -10V | 950 pF @ 1000 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C3M0032120KSICFET N-CH 1200V 63A TO247-4L |
3,408 | 32.58 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | 118 nC @ 15 V | +15V, -4V | 3357 pF @ 1000 V | - | 283W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
|
C2M0045170DSICFET N-CH 1700V 72A TO247-3 |
3,387 | 101.37 |
RFQ |
Datasheet |
Tube | C2M™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 72A (Tc) | 20V | 70mOhm @ 50A, 20V | 4V @ 18mA | 188 nC @ 20 V | +25V, -10V | 3672 pF @ 1000 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
|
C3M0160120DSICFET N-CH 1200V 17A TO247-3 |
3,892 | 10.00 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 15V | 208mOhm @ 8.5A, 15V | 3.6V @ 2.33mA | 38 nC @ 15 V | +15V, -4V | 632 pF @ 1000 V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C3M0040120J11200V 40 M SIC MOSFET |
901 | 24.32 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A (Tc) | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | 94 nC @ 15 V | +15V, -4V | 2900 pF @ 1000 V | - | 272W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
C3M0120100JSICFET N-CH 1000V 22A D2PAK-7 |
3,573 | 13.78 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5 nC @ 15 V | +15V, -4V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
C3M0065090DSICFET N-CH 900V 36A TO247-3 |
2,498 | 15.75 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 36A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30.4 nC @ 15 V | +18V, -8V | 660 pF @ 600 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
C3M0045065J1650V 45 M SIC MOSFET |
1,000 | 17.72 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 47A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 61 nC @ 15 V | +19V, -8V | 1621 pF @ 400 V | - | 147W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
C3M0060065KSICFET N-CH 650V 37A TO247-4L |
3,292 | 14.91 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 37A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | +15V, -4V | 1020 pF @ 600 V | - | 150W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
