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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
C3M0280090J-TRSICFET N-CH 900V 11A D2PAK-7 |
3,231 | 6.52 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 11A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5 nC @ 15 V | +18V, -8V | 150 pF @ 600 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
C3M0280090DSICFET N-CH 900V 11.5A TO247-3 |
3,800 | 6.19 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 11.5A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5 nC @ 15 V | +18V, -8V | 150 pF @ 600 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C3M0350120DSICFET N-CH 1200V 7.6A TO247-3 |
3,704 | 6.66 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 7.6A (Tc) | 15V | 455mOhm @ 3.6A, 15V | 3.6V @ 1mA | 19 nC @ 15 V | +15V, -4V | 345 pF @ 1000 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
C3M0120090J-TRSICFET N-CH 900V 22A D2PAK-7 |
2,339 | 11.80 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3 nC @ 15 V | +18V, -8V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
C2M0280120DSICFET N-CH 1200V 10A TO247-3 |
42,695 | 9.04 |
RFQ |
Datasheet |
Tube | Z-FET™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 20V | 370mOhm @ 6A, 20V | 2.8V @ 1.25mA (Typ) | 20.4 nC @ 20 V | +25V, -10V | 259 pF @ 1000 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
C2M1000170DSICFET N-CH 1700V 4.9A TO247-3 |
3,163 | 9.38 |
RFQ |
Datasheet |
Tube | Z-FET™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 4.9A (Tc) | 20V | 1.1Ohm @ 2A, 20V | 2.4V @ 100µA | 13 nC @ 20 V | +25V, -10V | 191 pF @ 1000 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C2M1000170JSICFET N-CH 1700V 5.3A D2PAK |
2,792 | 9.97 |
RFQ |
Datasheet |
Bulk | C2M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5.3A (Tc) | 20V | 1.4Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13 nC @ 20 V | +25V, -10V | 200 pF @ 1000 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
C3M0120090JSICFET N-CH 900V 22A D2PAK-7 |
7,112 | 11.80 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3 nC @ 15 V | +18V, -8V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
C3M0120100KSICFET N-CH 1000V 22A TO247-4L |
2,957 | 13.78 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5 nC @ 15 V | ±15V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C3M0060065JSICFET N-CH 650V 36A TO263-7 |
1,664 | 14.91 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 36A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | +15V, -4V | 1020 pF @ 600 V | - | 136W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount |
|
C3M0060065DSICFET N-CH 650V 37A TO247-3 |
431 | 14.91 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 37A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | +15V, -4V | 1020 pF @ 600 V | - | 150W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
|
C3M0065090JSICFET N-CH 900V 35A D2PAK-7 |
8,178 | 16.28 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30 nC @ 15 V | +19V, -8V | 660 pF @ 600 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
C3M0075120JSICFET N-CH 1200V 30A D2PAK-7 |
3,648 | 17.72 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51 nC @ 15 V | +19V, -8V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
C3M0075120DSICFET N-CH 1200V 30A TO247-3 |
274 | 17.72 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 54 nC @ 15 V | +19V, -8V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
C3M0065100JSICFET N-CH 1000V 35A D2PAK-7 |
4,452 | 19.15 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35 nC @ 15 V | +15V, -4V | 660 pF @ 600 V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
C3M0065100KSICFET N-CH 1000V 35A TO247-4L |
2,020 | 19.15 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35 nC @ 15 V | +19V, -8V | 660 pF @ 600 V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
C3M0040120D1200V 40MOHM SIC MOSFET |
597 | 24.32 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.5mA | 101 nC @ 15 V | +15V, -4V | 2900 pF @ 1000 V | - | 326W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
C3M0025065KGEN 3 650V 25 M SIC MOSFET |
930 | 27.87 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 97A (Tc) | 15V | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | 112 nC @ 15 V | +19V, -8V | 2980 pF @ 600 V | - | 326W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
|
C3M0025065DGEN 3 650V 25 M SIC MOSFET |
782 | 27.87 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 97A (Tc) | 15V | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | 108 nC @ 15 V | +19V, -8V | 2980 pF @ 600 V | - | 326W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
C3M0021120KSICFET N-CH 1200V 100A TO247-4L |
5,065 | 36.93 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 15V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | 162 nC @ 15 V | +15V, -4V | 4818 pF @ 1000 V | - | 469W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
