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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
C3M0021120DSICFET N-CH 1200V 100A TO247-3 |
2,372 | 36.93 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 15V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | 160 nC @ 15 V | +15V, -4V | 4818 pF @ 1000 V | - | 469W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
C3M0030090KSICFET N-CH 900V 63A TO247-4 |
4,934 | 39.38 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 63A (Tc) | 15V | 39mOhm @ 35A, 15V | 3.5V @ 11mA | 87 nC @ 15 V | +15V, -4V | 1864 pF @ 600 V | - | 149W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C2M0040120DSICFET N-CH 1200V 60A TO247-3 |
2,114 | 45.81 |
RFQ |
Datasheet |
Tube | Z-FET™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 52mOhm @ 40A, 20V | 2.8V @ 10mA | 115 nC @ 20 V | +25V, -10V | 1893 pF @ 1000 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
C3M0015065DSICFET N-CH 650V 120A TO247-3 |
820 | 45.82 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 120A (Tc) | 15V | 21mOhm @ 55.8A, 15V | 3.6V @ 15.5mA | 188 nC @ 15 V | +15V, -4V | 5011 pF @ 400 V | - | 416W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
|
C2M0025120DSICFET N-CH 1200V 90A TO247-3 |
7,165 | 81.14 |
RFQ |
Datasheet |
Tube | Z-FET™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | 2.4V @ 10mA | 161 nC @ 20 V | +25V, -10V | 2788 pF @ 1000 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
C3M0016120KSICFET N-CH 1.2KV 115A TO247-4 |
584 | 82.06 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 115A (Tc) | 15V | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | 211 nC @ 15 V | +15V, -4V | 6085 pF @ 1000 V | - | 556W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
|
C2M0045170PSICFET N-CH 1700V 72A TO247-4 |
2,435 | 93.00 |
RFQ |
Datasheet |
Tube | C2M™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 72A (Tc) | 20V | 59mOhm @ 50A, 20V | 4V @ 18mA | 188 nC @ 20 V | +25V, -10V | 3672 pF @ 1000 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
C3M0015065KSICFET N-CH 650V 120A TO247-4L |
1,036 | 45.82 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 120A (Tc) | 15V | 21mOhm @ 55.8A, 15V | 3.6V @ 15.5mA | 188 nC @ 15 V | +15V, -4V | 5011 pF @ 400 V | - | 416W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
C2M1000170J-TRSICFET N-CH 1700V 5.3A D2PAK-7 |
4,800 | 6.49 |
RFQ |
Datasheet |
Tape & Reel (TR) | C2M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5.3A (Tc) | 20V | 1.4Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13 nC @ 20 V | +25V, -10V | 200 pF @ 1000 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
C3M0280090JSICFET N-CH 900V 11A D2PAK-7 |
5,894 | 6.52 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 11A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5 nC @ 15 V | +18V, -8V | 150 pF @ 600 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
C3M0120065K650V 120M SIC MOSFET |
667 | 8.47 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 22A (Tc) | 15V | 157mOhm @ 6.76A, 15V | 3.6V @ 1.86mA | 28 nC @ 15 V | +19V, -8V | 640 pF @ 400 V | - | 98W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
C3M0160120JSICFET N-CH 1200V 17A TO263-7 |
4,286 | 10.00 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 15V | 208mOhm @ 8.5A, 15V | 3.6V @ 2.33mA | 24 nC @ 15 V | +15V, -4V | 632 pF @ 1000 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
C3M0045065DGEN 3 650V 45 M SIC MOSFET |
450 | 17.72 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 49A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 63 nC @ 15 V | +19V, -8V | 1621 pF @ 600 V | - | 176W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
|
C3M0045065KGEN 3 650V 49A SIC MOSFET |
1,128 | 17.72 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 49A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 63 nC @ 15 V | +19V, -8V | 1621 pF @ 600 V | - | 176W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
E3M0075120D1200V AUTOMOTIVE SIC 75MOHM FET |
243 | 18.73 |
RFQ |
Datasheet |
Tube | E-Series, Automotive | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 32A (Tc) | 15V | 97.5mOhm @ 17.9A, 15V | 3.6V @ 5mA | 57 nC @ 15 V | +19V, -8V | 1480 pF @ 1000 V | - | 145W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
C3M0040120K1200V 40MOHM SIC MOSFET |
2,006 | 24.32 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | 99 nC @ 15 V | +15V, -4V | 2900 pF @ 1000 V | - | 326W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
|
C3M0016120DSICFET N-CH 1200V 115A TO247-3 |
1,361 | 82.06 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 115A (Tc) | 15V | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | 207 nC @ 15 V | +15V, -4V | 6085 pF @ 1000 V | - | 556W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
|
C3M0350120JSICFET N-CH 1200V 7.2A TO263-7 |
8,669 | 6.66 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 7.2A (Tc) | 15V | 455mOhm @ 3.6A, 15V | 3.6V @ 1mA | 13 nC @ 15 V | +15V, -4V | 345 pF @ 1000 V | - | 40.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
C3M0120090DSICFET N-CH 900V 23A TO247-3 |
3,492 | 11.47 |
RFQ |
Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 23A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3 nC @ 15 V | +18V, -8V | 414 pF @ 600 V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
C2M0160120DSICFET N-CH 1200V 19A TO247-3 |
500 | 13.12 |
RFQ |
Datasheet |
Tube | Z-FET™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 20V | 196mOhm @ 10A, 20V | 2.5V @ 500µA | 32.6 nC @ 20 V | +25V, -10V | 527 pF @ 800 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
