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Transistors - FETs, MOSFETs - Single(42866)

Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
G75P04K P40V,RD(MAX)<10M@-10V,VTH-1.2V~- Goford Semiconductor	3,103	1.45	RFQ	PDF	Tape & Reel (TR),Cut Tape (CT)	-	Active	P-Channel	MOSFET (Metal Oxide)	40 V	70A (Tc)	10V	10mOhm @ 10A, 20V	2.5V @ 250µA	106 nC @ 10 V	±20V	5380 pF @ 20 V	-	130W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
GT105N10K MOSFET, N-CH, 100V,60A,TO-252 Goford Semiconductor	2,302	1.11	RFQ	-	Tape & Reel (TR),Cut Tape (CT)	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
630AT N200V,RD(MAX)<250M@10V,RD(MAX)<3 Goford Semiconductor	100	0.95	RFQ	PDF	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	200 V	9A (Tc)	4.5V, 10V	250mOhm @ 1A, 10V	2.2V @ 250µA	11.8 nC @ 10 V	±20V	509 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
G70N04T N40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor	2,961	0.99	RFQ	PDF	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	40 V	70A (Tc)	4.5V, 10V	7mOhm @ 30A, 10V	2.4V @ 250µA	50 nC @ 10 V	±20V	4010 pF @ 20 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
GT060N04T MOSFET, N-CH, 40V,60A,TO-220 Goford Semiconductor	3,595	0.94	RFQ	-	Tube	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
G45P40T MOSFET, P-CH, 40V,45A,TO-220 Goford Semiconductor	3,595	0.98	RFQ	-	Tube	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
G300P06T MOSFET, P-CH, 60V,40A,TO-220 Goford Semiconductor	3,088	0.98	RFQ	-	Tube	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT700P08T P-80V, -25A,RD<72M@-10V,VTH-2V~- Goford Semiconductor	100	1.02	RFQ	PDF	Tube	-	Active	P-Channel	MOSFET (Metal Oxide)	80 V	25A (Tc)	10V	72mOhm @ 2A, 10V	3.5V @ 250µA	75 nC @ 10 V	±20V	1639 pF @ 40 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
GT088N06T N60V,RD(MAX)<9M@10V,RD(MAX)<13M@ Goford Semiconductor	3,764	1.07	RFQ	PDF	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	60 V	60A (Tc)	4.5V, 10V	9mOhm @ 14A, 10V	2.4V @ 250µA	24 nC @ 10 V	±20V	1620 pF @ 30 V	-	75W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
GT105N10F N100V,RD(MAX)<10.5M@10V,RD(MAX)< Goford Semiconductor	2,458	1.47	RFQ	PDF	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	100 V	25A (Tc)	4.5V, 10V	10.5mOhm @ 11A, 10V	2.5V @ 250µA	54 nC @ 10 V	±20V	-	-	20.8W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
G65P06F P-CH, -60V, 65A, RD(MAX)<18M@-10 Goford Semiconductor	2,282	1.62	RFQ	-	Tube	-	Active	P-Channel	MOSFET (Metal Oxide)	60 V	65A (Tc)	10V	18mOhm @ 20A, 10V	3.5V @ 250µA	75 nC @ 10 V	±20V	6477 pF @ 25 V	-	39W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
G65P06T P-60V,RD(MAX)<18M@-10V,VTH-2.0V~ Goford Semiconductor	3,630	1.71	RFQ	PDF	Tube	-	Active	P-Channel	MOSFET (Metal Oxide)	60 V	65A (Tc)	10V	18mOhm @ 20A, 10V	3.5V @ 250µA	75 nC @ 10 V	±20V	5814 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
G110N06T N60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Goford Semiconductor	100	1.74	RFQ	PDF	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	60 V	110A (Tc)	4.5V, 10V	6.4mOhm @ 20A, 10V	2.5V @ 250µA	113 nC @ 10 V	±20V	5538 pF @ 25 V	-	120W (Tc)	-55°C ~ 175°C (TJ)	Through Hole