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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
G20P10KE

G20P10KE

P-CH, -100V, 20A, RD(MAX)<116M@-

Goford Semiconductor

2,320 0.94

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 116mOhm @ 16A, 10V 3V @ 250µA 70 nC @ 10 V ±20V 3354 pF @ 50 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
GT55N06D5

GT55N06D5

N60V,RD(MAX)<8M@10V,RD(MAX)<13M@

Goford Semiconductor

2,231 0.95

RFQ

GT55N06D5

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 53A (Ta) 4.5V, 10V 9mOhm @ 14A, 10V 2.5V @ 250µA 31 nC @ 10 V ±20V 1988 pF @ 30 V - 70W (Ta) -55°C ~ 150°C (TJ) Surface Mount
GT650N15K

GT650N15K

N150V,RD(MAX)<65M@10V,VTH2.5V~4.

Goford Semiconductor

2,460 0.99

RFQ

GT650N15K

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 150 V 20A (Tc) 10V 65mOhm @ 10A, 10V 4.5V @ 250µA 12 nC @ 10 V ±20V 600 pF @ 75 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G86N06K

G86N06K

N60V,RD(MAX)<8.4M@10V,VTH2V~4V

Goford Semiconductor

2,454 2454.00

RFQ

G86N06K

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 68A - 8.4mOhm @ 4A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 2860 pF @ 25 V - 88W -55°C ~ 175°C (TJ)
GT095N10D5

GT095N10D5

N100V,RD(MAX)<11M@10V,RD(MAX)<15

Goford Semiconductor

4,908 1.21

RFQ

GT095N10D5

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4.5V, 10V 11mOhm @ 35A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V - - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
GC11N65K

GC11N65K

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Goford Semiconductor

2,490 1.78

RFQ

GC11N65K

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 901 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
03N06

03N06

N60V,RD(MAX)<100M@10V,RD(MAX)<12

Goford Semiconductor

3,561 0.47

RFQ

03N06

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 3A - 100mOhm @ 2A, 10V 1.2V @ 250µA 14.6 nC @ 30 V ±20V 510 pF @ 30 V - 1.7W -55°C ~ 150°C (TJ) Surface Mount
5P40

5P40

P40V,RD(MAX)<85M@-10V,RD(MAX)<12

Goford Semiconductor

2,209 0.49

RFQ

5P40

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 5.3A (Ta) 4.5V, 10V 85mOhm @ 5A, 10V 3V @ 250µA 14 nC @ 10 V ±20V 650 pF @ 20 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G30N02T

G30N02T

N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.

Goford Semiconductor

2,159 0.62

RFQ

G30N02T

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 20 V 30A (Ta) 4.5V 13mOhm @ 20A, 4.5V 1.2V @ 250µA 15 nC @ 10 V ±12V 900 pF @ 10 V - 40W (Ta) -55°C ~ 150°C (TJ) Through Hole
GT100N12M

GT100N12M

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

Goford Semiconductor

800 1.78

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 10mOhm @ 35A, 10V 3.5V @ 250µA 50 nC @ 10 V ±20V 3050 pF @ 60 V - 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
GC11N65M

GC11N65M

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Goford Semiconductor

790 1.88

RFQ

GC11N65M

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 768 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
GT105N10T

GT105N10T

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

Goford Semiconductor

250 1.42

RFQ

GT105N10T

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4.5V, 10V 10.5mOhm @ 35A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V - - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
G60N10T

G60N10T

N100V,RD(MAX)<25M@10V,RD(MAX)<30

Goford Semiconductor

215 1.71

RFQ

G60N10T

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 25mOhm @ 20A, 10V 2.5V @ 250µA 146 nC @ 10 V ±20V 3970 pF @ 50 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
GC11N65T

GC11N65T

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Goford Semiconductor

2,557 1.78

RFQ

GC11N65T

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 901 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
GT100N12T

GT100N12T

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

Goford Semiconductor

3,432 1.82

RFQ

GT100N12T

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 10mOhm @ 35A, 10V 3.5V @ 250µA 50 nC @ 10 V ±20V 3050 pF @ 60 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
GT52N10T

GT52N10T

N100V,RD(MAX)<9M@10V,RD(MAX)<15M

Goford Semiconductor

3,988 1.82

RFQ

GT52N10T

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 80A - 9mOhm @ 50A, 10V 2.5V @ 250µA 44.5 nC @ 10 V ±20V 2626 pF @ 50 V - 227W -55°C ~ 150°C (TJ) Through Hole
GC11N65F

GC11N65F

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Goford Semiconductor

3,284 1.95

RFQ

GC11N65F

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 11A - 360mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 901 pF @ 50 V - 31.3W -55°C ~ 150°C (TJ) Through Hole
GT035N06T

GT035N06T

N-CH, 60V,170A, RD(MAX)<3.5M@10V

Goford Semiconductor

187 2.11

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 170A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.5V @ 250µA 70 nC @ 10 V ±20V 5064 pF @ 30 V - 215W (Tc) -55°C ~ 150°C (TJ) Through Hole
GC20N65F

GC20N65F

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Goford Semiconductor

2,197 2.94

RFQ

GC20N65F

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 170mOhm @ 10A, 10V 4.5V @ 250µA 39 nC @ 10 V ±30V 1724 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
GC20N65T

GC20N65T

N650V,RD(MAX)<170M@10V,VTH2.5V~4

Goford Semiconductor

100 2.97

RFQ

GC20N65T

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 170mOhm @ 10A, 10V 4.5V @ 250µA 39 nC @ 10 V ±30V 1724 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
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