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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFP26N60LPBF

IRFP26N60LPBF

MOSFET N-CH 600V 26A TO247-3

Vishay Siliconix

1,986 10.47

RFQ

IRFP26N60LPBF

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 250mOhm @ 16A, 10V 5V @ 250µA 180 nC @ 10 V ±30V 5020 pF @ 25 V - 470W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG100N60E-GE3

SIHG100N60E-GE3

MOSFET N-CH 600V 30A TO247AC

Vishay Siliconix

392 6.87

RFQ

SIHG100N60E-GE3

Datasheet

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 100mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1851 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG039N60E-GE3

SIHG039N60E-GE3

MOSFET N-CH 600V 63A TO247AC

Vishay Siliconix

406 11.67

RFQ

SIHG039N60E-GE3

Datasheet

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 63A (Tc) 10V 39mOhm @ 32A, 10V 5V @ 250µA 126 nC @ 10 V ±30V 4369 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4103DY-T1-GE3

SI4103DY-T1-GE3

MOSFET P-CH 30V 14A/16A 8SO

Vishay Siliconix

3,481 0.81

RFQ

SI4103DY-T1-GE3

Datasheet

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 16A (Tc) 4.5V, 10V 7.9mOhm @ 10A, 10V 2V @ 250µA 140 nC @ 10 V ±20V 5200 pF @ 15 V - 2.5W (Ta), 5.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4634DY-T1-E3

SI4634DY-T1-E3

MOSFET N-CH 30V 24.5A 8SO

Vishay Siliconix

5,000 1.85

RFQ

SI4634DY-T1-E3

Datasheet

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 24.5A (Tc) 4.5V, 10V 5.2mOhm @ 15A, 10V 2.6V @ 250µA 68 nC @ 10 V ±20V 3150 pF @ 15 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR420PBF

IRFR420PBF

MOSFET N-CH 500V 2.4A DPAK

Vishay Siliconix

2,996 1.35

RFQ

IRFR420PBF

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU9010PBF

IRFU9010PBF

MOSFET P-CH 50V 5.3A TO251AA

Vishay Siliconix

2,900 1.60

RFQ

IRFU9010PBF

Datasheet

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9640PBF-BE3

IRF9640PBF-BE3

MOSFET P-CH 200V 11A TO220AB

Vishay Siliconix

1,990 2.14

RFQ

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9520GPBF

IRFI9520GPBF

MOSFET P-CH 100V 5.2A TO220-3

Vishay Siliconix

1,172 2.59

RFQ

IRFI9520GPBF

Datasheet

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 5.2A (Tc) 10V 600mOhm @ 3.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI740GLCPBF

IRFI740GLCPBF

MOSFET N-CH 400V 5.7A TO220-3

Vishay Siliconix

1,058 4.08

RFQ

IRFI740GLCPBF

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.7A (Tc) 10V 550mOhm @ 3.4A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA21N80AE-GE3

SIHA21N80AE-GE3

MOSFET N-CH 800V 7.5A TO220

Vishay Siliconix

1,004 2.93

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 7.5A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL9N60APBF

IRFSL9N60APBF

MOSFET N-CH 600V 9.2A I2PAK

Vishay Siliconix

457 2.99

RFQ

IRFSL9N60APBF

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPC40PBF

IRFPC40PBF

MOSFET N-CH 600V 6.8A TO247-3

Vishay Siliconix

500 3.85

RFQ

IRFPC40PBF

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1.2Ohm @ 4.1A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP21N80AE-GE3

SIHP21N80AE-GE3

MOSFET N-CH 800V 17.4A TO220AB

Vishay Siliconix

987 4.55

RFQ

SIHP21N80AE-GE3

Datasheet

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40ASPBF

IRFBC40ASPBF

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix

484 4.66

RFQ

IRFBC40ASPBF

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG21N60EF-GE3

SIHG21N60EF-GE3

MOSFET N-CH 600V 21A TO247AC

Vishay Siliconix

118 4.69

RFQ

SIHG21N60EF-GE3

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2030 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG21N80AE-GE3

SIHG21N80AE-GE3

MOSFET N-CH 800V 17.4A TO247AC

Vishay Siliconix

2,025 5.01

RFQ

SIHG21N80AE-GE3

Datasheet

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG125N60EF-GE3

SIHG125N60EF-GE3

MOSFET N-CH 600V 25A TO247AC

Vishay Siliconix

545 5.14

RFQ

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF12N50C-E3

SIHF12N50C-E3

MOSFET N-CH 500V 12A TO220

Vishay Siliconix

997 5.51

RFQ

SIHF12N50C-E3

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 555mOhm @ 4A, 10V 5V @ 250µA 48 nC @ 10 V ±30V 1375 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP16N50C-E3

SIHP16N50C-E3

MOSFET N-CH 500V 16A TO220AB

Vishay Siliconix

963 6.12

RFQ

SIHP16N50C-E3

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 68 nC @ 10 V ±30V 1900 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
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