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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH03SG60CXKSA2DIODE SCHOTTKY 600V 3A TO220-2 |
2,170 | 1.36 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 60pF @ 1V, 1MHz | 0 ns | 15 µA @ 600 V | 600 V | 3A (DC) | -55°C ~ 175°C | 2.3 V @ 3 A |
|
IDW40E65D1FKSA1DIODE GEN PURP 650V 80A TO247-3 |
3,179 | 2.82 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 129 ns | 40 µA @ 650 V | 650 V | 80A | -40°C ~ 175°C | 1.7 V @ 40 A | |
|
AIDW10S65C5XKSA1DIODE SCHOTTKY 650V 10A TO247 |
3,178 | 2.87 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q100/101, CoolSiC™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 303pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 10A (DC) | -40°C ~ 175°C | 1.7 V @ 10 A |
|
IDD09SG60CXTMA2DIODE SCHOTTKY 600V 9A TO252-3 |
3,329 | 4.14 |
RFQ |
Datasheet |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 280pF @ 1V, 1MHz | 0 ns | 80 µA @ 600 V | 600 V | 9A (DC) | -55°C ~ 175°C | 2.1 V @ 9 A |
|
|
IDD10SG60CXTMA2DIODE SCHOTTKY 600V 10A TO252-3 |
2,826 | 4.17 |
RFQ |
Datasheet |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 290pF @ 1V, 1MHz | 0 ns | 90 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 175°C | 2.1 V @ 10 A |
|
IDK05G65C5XTMA2DIODE SCHOTTKY 650V 5A TO263-2 |
2,737 | 1.69 |
RFQ |
Datasheet |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 160pF @ 1V, 1MHz | 0 ns | 830 µA @ 650 V | 650 V | 5A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A |
|
|
AIDW16S65C5XKSA1DIODE SCHOTTKY 650V 16A TO247 |
3,816 | 4.25 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q100/101, CoolSiC™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 471pF @ 1V, 1MHz | 0 ns | 90 µA @ 650 V | 650 V | 16A (DC) | -40°C ~ 175°C | 1.7 V @ 16 A |
|
|
IDH05G65C5XKSA2DIODE SCHOTTKY 650V 5A TO220-2 |
3,069 | 1.71 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 160pF @ 1V, 1MHz | 0 ns | 90 µA @ 650 V | 650 V | 5A (DC) | -55°C ~ 175°C | 1.7 V @ 5 A |
|
|
IDK12G65C5XTMA2DIODE SCHOTTKY 650V 12A TO263-2 |
3,282 | 3.91 |
RFQ |
Datasheet |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 360pF @ 1V, 1MHz | 0 ns | - | 650 V | 12A (DC) | -55°C ~ 175°C | 1.8 V @ 12 A |
|
|
IDK09G65C5XTMA2DIODE SCHOTTKY 650V 9A TO263-2 |
3,648 | 2.99 |
RFQ |
Datasheet |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 270pF @ 1V, 1MHz | 0 ns | 1.6 mA @ 650 V | 650 V | 9A (DC) | -55°C ~ 175°C | 1.8 V @ 9 A |
|
|
IDH09SG60CXKSA2DIODE SCHOTTKY 600V 9A TO220-2 |
3,606 | 3.93 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 280pF @ 1V, 1MHz | 0 ns | 80 µA @ 600 V | 600 V | 9A (DC) | -55°C ~ 175°C | 2.1 V @ 9 A |
|
IDP2321XUMA1IC AC/DC DGTL PLATFORM 16SOIC |
2,751 | 3.02 |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Not For New Designs | - | - | - | - | - | - | - | - | ||
|
IDW20G65C5BXKSA2DIODE SCHOTTKY 650V 10A TO247-3 |
2,764 | 7.71 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 180 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
|
IDW32G65C5BXKSA2DIODE SCHOTTKY 650V 16A TO247-3 |
2,715 | 12.34 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 470pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 16A (DC) | -55°C ~ 175°C | 1.7 V @ 16 A |
|
|
IDK02G65C5XTMA2DIODE SCHOTTKY 650V 2A TO263-2 |
3,954 | 0.91 |
RFQ |
Datasheet |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 70pF @ 1V, 1MHz | 0 ns | 330 µA @ 650 V | 650 V | 2A (DC) | -55°C ~ 175°C | 1.8 V @ 2 A |
|
|
GATELEAD28134XPSA1DUMMY 57 |
3,192 | 11.30 |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
IDL02G65C5XUMA2DIODE SCHOTTKY 650V 2A VSON-4 |
2,056 | 0.61 |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 70pF @ 1V, 1MHz | 0 ns | 35 µA @ 650 V | 650 V | 2A (DC) | -55°C ~ 175°C | 1.7 V @ 2 A |
|
|
IDH04SG60CXKSA2DIODE SCHOTTKY 600V 4A TO220-2 |
2,969 | 1.80 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 80pF @ 1V, 1MHz | 0 ns | 25 µA @ 600 V | 600 V | 4A (DC) | -55°C ~ 175°C | 2.3 V @ 4 A |
|
|
GLHUELSE1626XPSA1DUMMY 57 |
3,517 | 1.82 |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GLHUELSE1627XPSA1DUMMY 57 |
2,328 | 1.82 |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
