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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAS3005A02VH6327XTSA1DIODE SCHOTTKY 30V 500MA SC79-2 |
2,674 | 0.52 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 15pF @ 5V, 1MHz | - | 300 µA @ 30 V | 30 V | 500mA (DC) | -55°C ~ 125°C | 500 mV @ 500 mA | |
|
IDP08E65D2XKSA1DIODE GEN PURP 650V 8A TO220-2 |
3,153 | 1.31 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 40 µA @ 650 V | 650 V | 8A | -40°C ~ 175°C | 2.3 V @ 3 A | |
|
BAS1603WE6327HTSA1DIODE GEN PURP 80V 250MA SOD323 |
2,303 | 0.26 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 80 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
IDDD10G65C6XTMA1SIC DIODES |
3,843 | 4.78 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 495pF @ 1V, 1MHz | 0 ns | 33 µA @ 420 V | 650 V | 29A (DC) | -55°C ~ 175°C | - |
|
|
IDH08G65C5XKSA2DIODE SCHOTTKY 650V 8A TO220-2-1 |
2,063 | 4.11 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 140 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A |
|
|
IDH09G65C5XKSA2DIODE SCHOTTKY 650V 9A TO220-2-1 |
2,440 | 4.62 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 270pF @ 1V, 1MHz | 0 ns | 160 µA @ 650 V | 650 V | 9A (DC) | -55°C ~ 175°C | 1.7 V @ 9 A |
|
IDW10G65C5XKSA1DIODE SCHOTTKY 650V 10A TO247-3 |
2,032 | 5.36 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 180 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
|
IDH06G65C6XKSA1DIODE SCHOTTKY 650V 16A TO220-2 |
500 | 3.28 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 302pF @ 1V, 1MHz | 0 ns | 20 µA @ 420 V | 650 V | 16A (DC) | -55°C ~ 175°C | 1.35 V @ 6 A | |
|
|
IDDD04G65C6XTMA1DIODE SCHOT 650V 13A HDSOP-10-1 |
3,560 | 2.37 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 205pF @ 1V, 1MHz | 0 ns | 14 µA @ 420 V | 650 V | 13A (DC) | -55°C ~ 175°C | - |
|
|
BAS2103WE6433HTMA1DIODE GEN PURP 200V 250MA SOD323 |
2,287 | 0.04 |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 200 mA | |
|
|
IDH08G120C5XKSA1DIODE SCHOT 1200V 8A TO220-2-1 |
3,532 | 4.67 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 365pF @ 1V, 1MHz | 0 ns | 40 µA @ 1200 V | 1200 V | 8A (DC) | -55°C ~ 175°C | 1.95 V @ 8 A |
|
|
IDP15E65D1XKSA1DIODE GEN PURP 650V 15A TO220-2 |
3,057 | 1.79 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 114 ns | 40 µA @ 650 V | 650 V | 15A | -40°C ~ 175°C | 1.7 V @ 15 A | |
|
|
IDP15E65D2XKSA1DIODE GEN PURP 650V 15A TO220 |
3,340 | 1.87 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 47 ns | 40 µA @ 650 V | 650 V | 15A | -40°C ~ 175°C | 2.3 V @ 15 A | |
|
|
IDDD06G65C6XTMA1SIC DIODES |
2,403 | 1.92 |
RFQ |
Datasheet |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 302pF @ 1V, 1MHz | 0 ns | 20 µA @ 420 V | 650 V | 18A (DC) | -55°C ~ 175°C | - |
|
IDD06SG60CXTMA2DIODE SCHOTTKY 600V 6A TO252-3 |
3,969 | 3.81 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 130pF @ 1V, 1MHz | 0 ns | 50 µA @ 600 V | 600 V | 6A (DC) | -55°C ~ 175°C | 2.3 V @ 6 A |
|
BAS1602LE6327XTMA1DIODE GEN PURP 80V 200MA TSLP-2 |
3,487 | 0.04 |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 80 V | 200mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
IDL08G65C5XUMA2DIODE SCHOTTKY 650V 8A VSON-4 |
3,727 | 4.05 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 250pF @ 1V, 1MHz | 0 ns | 140 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 150°C | 1.7 V @ 8 A |
|
AIDW20S65C5XKSA1DIODE SCHOTTKY 650V 20A TO247 |
2,612 | 8.01 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q100/101, CoolSiC™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 584pF @ 1V, 1MHz | 0 ns | 120 µA @ 650 V | 650 V | 20A (DC) | -40°C ~ 175°C | 1.7 V @ 20 A |
|
|
IDP40E65D2XKSA1DIODE GEN PURP 650V 40A TO220-2 |
3,416 | 2.31 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 40 µA @ 650 V | 650 V | 40A | -40°C ~ 175°C | 2.3 V @ 40 A | |
|
IDWD15G120C5XKSA1SIC SCHOTTKY 1200V 15A TO247-2 |
2,955 | 9.15 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1050pF @ 1V, 1MHz | 0 ns | 124 µA @ 1200 V | 1200 V | 49A (DC) | -55°C ~ 175°C | 1.65 V @ 15 A |
