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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH16G65C5XKSA2DIODE SCHOTKY 650V 16A TO220-2-1 |
3,484 | 7.27 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 470pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 16A (DC) | -55°C ~ 175°C | 1.7 V @ 16 A |
|
|
IDH16G65C6XKSA1DIODE SCHOTTKY 650V 34A TO220-2 |
3,028 | 7.53 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 783pF @ 1V, 1MHz | 0 ns | 53 µA @ 420 V | 650 V | 34A (DC) | -55°C ~ 175°C | 1.35 V @ 16 A | |
|
|
IDH20G65C6XKSA1DIODE SCHOTTKY 650V 41A TO220-2 |
2,891 | 8.46 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 970pF @ 1V, 1MHz | 0 ns | 67 µA @ 420 V | 650 V | 41A (DC) | -55°C ~ 175°C | 1.35 V @ 20 A | |
|
IDW20G65C5XKSA1DIODE SCHOTTKY 650V 20A TO247-3 |
2,691 | 9.49 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 590pF @ 1V, 1MHz | 0 ns | 210 µA @ 650 V | 650 V | 20A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A |
|
BAS7002LE6327XTMA1DIODE SCHOTTKY 70V 70MA TSLP-2 |
3,509 | 0.47 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 100 ps | 100 nA @ 50 V | 70 V | 70mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA | |
|
BAT54E6327HTSA1DIODE SCHOTTKY 30V 200MA SOT23-3 |
123,230 | 0.40 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 150°C (Max) | 800 mV @ 100 mA | |
|
|
IDH20G120C5XKSA1DIODE SCHOTTKY 1.2KV 56A TO220-2 |
3,840 | 10.94 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1050pF @ 1V, 1MHz | 0 ns | 123 µA @ 1200 V | 1200 V | 56A (DC) | -55°C ~ 175°C | 1.8 V @ 20 A |
|
IDW30G65C5XKSA1DIODE SCHOTTKY 650V 30A TO247-3 |
2,687 | 12.56 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 860pF @ 1V, 1MHz | 0 ns | 220 µA @ 650 V | 650 V | 30A (DC) | -55°C ~ 175°C | 1.7 V @ 30 A |
|
IDWD30G120C5XKSA1SIC SCHOTTKY 1200V 30A TO247-2 |
3,311 | 15.47 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1980pF @ 1V, 1MHz | 0 ns | 248 µA @ 1200 V | 1200 V | 87A (DC) | -55°C ~ 175°C | 1.65 V @ 30 A |
|
|
IDW40G65C5XKSA1DIODE SCHOTTKY 650V 40A TO247-3 |
3,663 | 16.57 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1140pF @ 1V, 1MHz | 0 ns | 220 µA @ 650 V | 650 V | 40A (DC) | -55°C ~ 175°C | 1.7 V @ 40 A |
|
|
IDP08E65D1XKSA1DIODE GEN PURP 650V 8A TO220-2 |
726 | 1.76 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 80 ns | 40 µA @ 650 V | 650 V | 8A | -40°C ~ 175°C | 1.7 V @ 8 A | |
|
BAT5403WE6327HTSA1DIODE SCHOT 30V 200MA SOD323-2 |
8,994 | 0.47 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 150°C (Max) | 800 mV @ 100 mA | |
|
|
BAS170WE6327HTSA1DIODE SCHOTTKY 70V 70MA SOD323-2 |
3,521 | 0.44 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 100 ps | 100 nA @ 50 V | 70 V | 70mA (DC) | 150°C (Max) | 1 V @ 15 mA | |
|
IDB30E120ATMA1DIODE GEN PURP 1.2KV 50A TO263-3 |
999 | 2.19 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 243 ns | 100 µA @ 1200 V | 1200 V | 50A (DC) | -55°C ~ 150°C | 2.15 V @ 30 A | |
|
BAS5202VH6327XTSA1DIODE SCHOTTKY 45V 750MA SC79-2 |
631 | 0.48 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 10pF @ 10V, 1MHz | - | 10 µA @ 45 V | 45 V | 750mA (DC) | 150°C (Max) | 600 mV @ 200 mA | |
|
IDD04SG60CXTMA2DIODE SCHOTTKY 600V 4A TO252-3 |
3,806 | 2.83 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 80pF @ 1V, 1MHz | 0 ns | 25 µA @ 600 V | 600 V | 4A (DC) | -55°C ~ 175°C | 2.3 V @ 4 A |
|
|
IDP20E65D2XKSA1DIODE GEN PURP 650V 40A TO220-2 |
3,049 | 1.77 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 32 ns | 40 µA @ 650 V | 650 V | 40A (DC) | -40°C ~ 175°C | 2.2 V @ 20 A | |
|
ND350N12KHPSA1DIODE GP 1.2KV 350A BG-PB50ND-1 |
3,482 | 161.18 |
RFQ |
Datasheet |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 30 mA @ 1200 V | 1200 V | 350A | -40°C ~ 135°C | - | |
|
DZ600N18KHPSA1DIODE MODULE 1800V 600A |
3,113 | 247.87 |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 1800 V | 1800 V | 600A | -40°C ~ 150°C | - | |
|
|
IDV08E65D2XKSA1DIODE GEN PURP 650V 8A TO220-2 |
3,497 | 1.14 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 40 µA @ 650 V | 650 V | 8A | -40°C ~ 175°C | 2.3 V @ 8 A |
