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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQD13N10LTMPOWER FIELD-EFFECT TRANSISTOR, 1 |
2,006 | 1.00 |
RFQ |
Datasheet |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 5V, 10V | 180mOhm @ 5A, 10V | 2V @ 250µA | 12 nC @ 5 V | ±20V | 520 pF @ 25 V | - | 2.5W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
FQD2N60CTMPOWER FIELD-EFFECT TRANSISTOR, 1 |
3,730 | 1.00 |
RFQ |
Datasheet |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.9A (Tc) | 10V | 4.7Ohm @ 950mA, 10V | 4V @ 250µA | 12 nC @ 10 V | ±30V | 235 pF @ 25 V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDMS2572POWER FIELD-EFFECT TRANSISTOR, 2 |
3,956 | 1.00 |
RFQ |
Datasheet |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 4.5A (Ta), 27A (Tc) | 6V, 10V | 47mOhm @ 4.5A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 2610 pF @ 75 V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDC604PSMALL SIGNAL FIELD-EFFECT TRANSI |
2,305 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.5A (Ta) | 1.8V, 4.5V | 33mOhm @ 5.5A, 4.5V | 1.5V @ 250µA | 30 nC @ 4.5 V | ±8V | 1926 pF @ 10 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2N7000-D26ZSMALL SIGNAL FIELD-EFFECT TRANSI |
2,736 | 1.00 |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
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FDD050N03BMOSFET N-CH 30V 50A DPAK |
2,762 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 25A, 10V | 3V @ 250µA | 43 nC @ 10 V | ±16V | 2875 pF @ 15 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
FQB6N40CTMMOSFET N-CH 400V 6A D2PAK |
3,606 | 1.00 |
RFQ |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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FDP12N50NZMOSFET N-CH 500V 11.5A TO220-3 |
3,457 | 1.00 |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.5A (Tc) | 10V | 520mOhm @ 5.75A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±25V | 1235 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FDP3652POWER FIELD-EFFECT TRANSISTOR, 9 |
3,741 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9A (Ta), 61A (Tc) | 6V, 10V | 16mOhm @ 61A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±20V | 2880 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
FDMS7676MOSFET N-CH 30V 16A/28A 8PQFN |
2,340 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta), 28A (Tc) | 4.5V, 10V | 5.5mOhm @ 19A, 10V | 3V @ 250µA | 44 nC @ 10 V | ±20V | 2960 pF @ 15 V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDN306PSMALL SIGNAL FIELD-EFFECT TRANSI |
2,783 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 2.6A (Ta) | 1.8V, 4.5V | 40mOhm @ 2.6A, 4.5V | 1.5V @ 250µA | 17 nC @ 4.5 V | ±8V | 1138 pF @ 6 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
FDC5661NPOWER FIELD-EFFECT TRANSISTOR |
2,034 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 4.3A (Ta) | 4.5V, 10V | 47mOhm @ 4.3A, 10V | 3V @ 250µA | 19 nC @ 10 V | ±20V | 763 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDMS86569-F085MOSFET N-CH 60V 65A POWER56 |
3,823 | 1.00 |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101, PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 10V | 5.6mOhm @ 65A, 10V | 4V @ 250µA | 54 nC @ 10 V | ±20V | 2560 pF @ 30 V | - | 100W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FDN339ANSMALL SIGNAL FIELD-EFFECT TRANSI |
3,011 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 2.5V, 4.5V | 35mOhm @ 3A, 4.5V | 1.5V @ 250µA | 10 nC @ 4.5 V | ±8V | 700 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDB0260N1007LMOSFET N-CH 100V 200A TO263-7 |
2,890 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 2.6mOhm @ 27A, 10V | 4V @ 250µA | 118 nC @ 10 V | ±20V | 8545 pF @ 50 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FQU12N20TUMOSFET N-CH 200V 9A I-PAK |
3,817 | 1.00 |
RFQ |
Datasheet |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 280mOhm @ 4.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 910 pF @ 25 V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDD3680POWER FIELD-EFFECT TRANSISTOR, 2 |
2,507 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Ta) | 6V, 10V | 46mOhm @ 6.1A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±20V | 1735 pF @ 50 V | - | 68W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDP55N06POWER FIELD-EFFECT TRANSISTOR, 5 |
3,663 | 1.00 |
RFQ |
Datasheet |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 55A (Tc) | 10V | 22mOhm @ 27.5A, 10V | 4V @ 250µA | 37 nC @ 10 V | ±25V | 1510 pF @ 25 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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|
FDPF15N65POWER FIELD-EFFECT TRANSISTOR, 1 |
3,038 | 1.00 |
RFQ |
Datasheet |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 440mOhm @ 7.5A, 10V | 5V @ 250µA | 63 nC @ 10 V | ±30V | 3095 pF @ 25 V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BS170-D26ZSMALL SIGNAL FIELD-EFFECT TRANSI |
2,203 | 1.00 |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 40 pF @ 10 V | - | 830mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
