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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDPF16N50POWER FIELD-EFFECT TRANSISTOR, 1 |
3,228 | 1.00 |
RFQ |
Datasheet |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1945 pF @ 25 V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FCH125N60EMOSFET N-CH 600V 29A TO247-3 |
3,350 | 1.00 |
RFQ |
Datasheet |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 250µA | 95 nC @ 10 V | ±20V | 2990 pF @ 380 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FCPF850N80ZPOWER FIELD-EFFECT TRANSISTOR, N |
2,205 | 1.00 |
RFQ |
Datasheet |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29 nC @ 10 V | ±20V | 1315 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BSS138KSMALL SIGNAL FIELD-EFFECT TRANSI |
3,673 | 1.00 |
RFQ |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 220mA (Ta) | 1.8V, 2.5V | 1.6Ohm @ 50mA, 5V | 1.2V @ 250µA | 2.4 nC @ 10 V | ±12V | 58 pF @ 25 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
FDBL0090N40MOSFET N-CH 40V 240A 8HPSOF |
2,852 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 0.9mOhm @ 80A, 10V | 4V @ 250µA | 188 nC @ 10 V | ±20V | 12000 pF @ 25 V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FDN304PSMALL SIGNAL FIELD-EFFECT TRANSI |
2,997 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | 1.8V, 4.5V | 52mOhm @ 2.4A, 4.5V | 1.5V @ 250µA | 20 nC @ 4.5 V | ±8V | 1312 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDS6670ASSMALL SIGNAL FIELD-EFFECT TRANSI |
2,167 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.5A (Ta) | 4.5V, 10V | 9mOhm @ 13.5A, 10V | 3V @ 1mA | 38 nC @ 10 V | ±20V | 1540 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDS6690ASSMALL SIGNAL FIELD-EFFECT TRANSI |
2,964 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 12mOhm @ 10A, 10V | 3V @ 1mA | 23 nC @ 10 V | ±20V | 910 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FQT7N10LTFPOWER FIELD-EFFECT TRANSISTOR, 1 |
3,943 | 1.00 |
RFQ |
Datasheet |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.7A (Tc) | 5V, 10V | 350mOhm @ 850mA, 10V | 2V @ 250µA | 6 nC @ 5 V | ±20V | 290 pF @ 25 V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
FDC658APSMALL SIGNAL FIELD-EFFECT TRANSI |
2,820 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4.5V, 10V | 50mOhm @ 4A, 10V | 3V @ 250µA | 8.1 nC @ 5 V | ±25V | 470 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
FDS9400AMOSFET P-CH 30V 3.4A 8SOIC |
2,273 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.4A (Ta) | 4.5V, 10V | 130mOhm @ 1A, 10V | 3V @ 250µA | 3.5 nC @ 5 V | ±25V | 205 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FDB0250N807LMOSFET N-CH 80V 240A TO263-7 |
3,777 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 240A (Tc) | 8V, 10V | 2.2mOhm @ 30A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 15400 pF @ 40 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDN360PSMALL SIGNAL FIELD-EFFECT TRANSI |
2,781 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 4.5V, 10V | 80mOhm @ 2A, 10V | 3V @ 250µA | 9 nC @ 10 V | ±20V | 298 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDU7N60NZTUMOSFET N-CH 600V 5.5A I-PAK |
2,713 | 1.00 |
RFQ |
Datasheet |
Bulk | UniFET-II™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.5A (Tc) | 10V | 1.25Ohm @ 2.75A, 10V | 5V @ 250µA | 17 nC @ 10 V | ±25V | 730 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FDB110N15APOWER FIELD-EFFECT TRANSISTOR, 9 |
2,530 | 1.00 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 92A (Tc) | 10V | 11mOhm @ 92A, 10V | 4V @ 250µA | 61 nC @ 10 V | ±20V | 4510 pF @ 75 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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|
2N7002WSMALL SIGNAL FIELD-EFFECT TRANSI |
2,753 | 1.00 |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 115mA (Ta) | 5V, 10V | 7.5Ohm @ 50mA, 5V | 2V @ 250µA | - | ±20V | 50 pF @ 25 V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
FQP8N90CMOSFET N-CH 900V 6.3A TO220-3 |
2,288 | 1.00 |
RFQ |
Datasheet |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.3A (Tc) | 10V | 1.9Ohm @ 3.15A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 2080 pF @ 25 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FDPF12N60NZPOWER FIELD-EFFECT TRANSISTOR, 1 |
2,686 | 1.00 |
RFQ |
Datasheet |
Bulk | UniFET-II™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 34 nC @ 10 V | ±30V | 1676 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FCH190N65F-F155MOSFET N-CH 650V 20.6A TO247 |
2,453 | 0.00 |
RFQ |
Datasheet |
Bulk | FRFET®, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.6A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 2mA | 78 nC @ 10 V | ±20V | 3225 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
FCPF220N80POWER FIELD-EFFECT TRANSISTOR |
3,157 | 1.00 |
RFQ |
Datasheet |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 23A (Tc) | 10V | 220mOhm @ 11.5A, 10V | 4.5V @ 2.3mA | 105 nC @ 10 V | ±20V | 4560 pF @ 100 V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
