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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FQPF6N80TMOSFET N-CH 800V 3.3A TO220F |
5,111 | 1.16 |
RFQ |
Datasheet |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.3A (Tc) | 10V | 1.95Ohm @ 1.65A, 10V | 5V @ 250µA | 31 nC @ 10 V | ±30V | 1500 pF @ 25 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FQPF8N90CPOWER FIELD-EFFECT TRANSISTOR, 6 |
5,346 | 1.17 |
RFQ |
Datasheet |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.3A (Tc) | 10V | 1.9Ohm @ 3.15A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 2080 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FDPF44N25TRDTUMOSFET N-CH 250V 44A TO220F |
1,331 | 1.18 |
RFQ |
Datasheet |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 44A (Tc) | 10V | 69mOhm @ 22A, 10V | 5V @ 250µA | 61 nC @ 10 V | ±30V | 2870 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FQI7N60TUPOWER FIELD-EFFECT TRANSISTOR, 7 |
1,000 | 1.18 |
RFQ |
Datasheet |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.4A (Tc) | 10V | 1Ohm @ 3.7A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±30V | 1430 pF @ 25 V | - | 3.13W (Ta), 142W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FQB27N25TM-F085FQB27N25 - N-CHANNEL ULTRAFET 25 |
5,600 | 1.20 |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 25.5A (Tc) | 10V | 131mOhm @ 25.5A, 10V | 5V @ 250µA | 49 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDI9406-F085FDI9406 - N-CHANNEL POWERTRENCH |
5,600 | 1.21 |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 2.2mOhm @ 80A, 10V | 4V @ 250µA | 138 nC @ 10 V | ±20V | 7710 pF @ 25 V | - | 176W (Tj) | -55°C ~ 175°C (TJ) | Through Hole |
|
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FDPF16N50UTMOSFET N-CH 500V 15A TO220F |
1,943 | 1.23 |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 480mOhm @ 7.5A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1945 pF @ 25 V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRF9540IRF9540 - 19A, 100V, 0.2OHM, P-C |
750 | 1.25 |
RFQ |
Datasheet |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Tc) | 10V | 200mOhm @ 11A, 10V | 4V @ 250µA | 61 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
FDP8442-F085POWER FIELD-EFFECT TRANSISTOR, 2 |
750 | 1.27 |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 80A (Tc) | 10V | 3.1mOhm @ 80A, 10V | 4V @ 250µA | 235 nC @ 10 V | ±20V | 12200 pF @ 25 V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
FDB16AN08A0MOSFET N-CH 75V 9A/58A D2PAK |
6,786 | 1.32 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 9A (Ta), 58A (Tc) | 6V, 10V | 16mOhm @ 58A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 1857 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
NTD5C446NT4GNTD5C446 - SINGLE N-CHANNEL POWE |
1,500 | 1.37 |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 250µA | 34.3 nC @ 10 V | ±20V | 2300 pF @ 20 V | - | 66W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FDMC7570SPOWER FIELD-EFFECT TRANSISTOR, 2 |
4,336 | 1.46 |
RFQ |
Datasheet |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 27A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 27A, 10V | 3V @ 1mA | 68 nC @ 10 V | ±20V | 4410 pF @ 13 V | - | 2.3W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FQI27N25TUMOSFET N-CH 250V 25.5A I2PAK |
600 | 1.47 |
RFQ |
Datasheet |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 25.5A (Tc) | 10V | 110mOhm @ 12.75A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 3.13W (Ta), 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
FDP39N20POWER FIELD-EFFECT TRANSISTOR, 3 |
500 | 1.47 |
RFQ |
Datasheet |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 39A (Tc) | 10V | 66mOhm @ 19.5A, 10V | 5V @ 250µA | 49 nC @ 10 V | ±30V | 2130 pF @ 25 V | - | 251W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
HUF75344P375A, 55V, 0.008 OHM, N-CHANNEL U |
1,425 | 1.51 |
RFQ |
Datasheet |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 20 V | ±20V | 3200 pF @ 25 V | - | 285W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
FDA16N50-F109POWER FIELD-EFFECT TRANSISTOR, 1 |
270 | 1.51 |
RFQ |
Datasheet |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16.5A (Tc) | 10V | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1945 pF @ 25 V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FDZ375PMOSFET P-CH 20V 3.7A 4WLCSP |
4,885 | 1.54 |
RFQ |
Datasheet |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.7A (Ta) | 1.5V, 4.5V | 78mOhm @ 2A, 4.5V | 1.2V @ 250µA | 15 nC @ 4.5 V | ±8V | 865 pF @ 10 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FCP165N65S3R0FCP165N65S3R0 - POWER MOSFET, N- |
2,115 | 1.55 |
RFQ |
Bulk | SuperFET® III | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 165mOhm @ 9.5A, 10V | 4.5V @ 440mA | 39 nC @ 10 V | ±30V | 1500 pF @ 400 V | - | 154W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
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FQA13N50C-F109MOSFET N-CH 500V 13.5A TO3P |
792 | 1.68 |
RFQ |
Datasheet |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13.5A (Tc) | 10V | 480mOhm @ 6.75A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±30V | 2055 pF @ 25 V | - | 218W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDB8860-F085FDB8860 - N-CHANNEL LOGIC LEVEL |
6,400 | 1.73 |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.3mOhm @ 80A, 10V | 3V @ 250µA | 214 nC @ 10 V | ±20V | 12585 pF @ 15 V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
