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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UF3C065040K4SMOSFET N-CH 650V 54A TO247-4 |
2,650 | 14.22 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | - | 650 V | 54A (Tc) | 12V | 52mOhm @ 40A, 12V | 6V @ 10mA | 43 nC @ 12 V | ±25V | 1500 pF @ 100 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
UJ3C065030K3SMOSFET N-CH 650V 85A TO247-3 |
2,815 | 19.91 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | - | 650 V | 85A (Tc) | 12V | 35mOhm @ 50A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
UJ4SC075006K4S750V/6MOHM, SIC, STACKED CASCODE |
3,567 | 68.40 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 120A (Tc) | 12V | 7.4mOhm @ 80A, 12V | 6V @ 10mA | 164 nC @ 15 V | ±20V | 8374 pF @ 400 V | - | 714W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
UJ4C075023K4S750V/23MOHM, SIC, CASCODE, G4, T |
2,369 | 16.00 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 66A (Tc) | 12V | 29mOhm @ 40A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
UJ4SC075011K4S750V/11MOHM, SIC, STACKED CASCOD |
2,315 | 33.06 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 104A (Tc) | 12V | 14.2mOhm @ 60A, 12V | 5.5V @ 10mA | 75 nC @ 15 V | ±20V | 3245 pF @ 400 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
UF3C120150K3SSICFET N-CH 1200V 18.4A TO247-3 |
2,449 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 18.4A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole |
|
UF3SC065030D8SSICFET N-CH 650V 18A 4DFN |
2,985 | 0.00 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | SiCFET (Cascode SiCJFET) | 650 V | 18A (Tc) | 12V | 42mOhm @ 20A, 12V | 6V @ 10mA | 43 nC @ 12 V | ±25V | 1500 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
UF3SC065040D8SSICFET N-CH 650V 18A 4DFN |
3,578 | 0.00 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | SiCFET (Cascode SiCJFET) | 650 V | 18A (Tc) | 12V | 58mOhm @ 20A, 12V | 6V @ 10mA | 43 nC @ 12 V | ±25V | 1500 pF @ 100 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
