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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2N7635-GATRANS SJT 650V 4A TO257 |
3,165 | 0.00 |
RFQ |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 47W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | |
|
2N7636-GATRANS SJT 650V 4A TO276 |
2,583 | 0.00 |
RFQ |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 125W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | |
|
|
2N7637-GATRANS SJT 650V 7A TO257 |
3,422 | 0.00 |
RFQ |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 7A (Tc) (165°C) | - | 170mOhm @ 7A | - | - | - | 720 pF @ 35 V | - | 80W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | |
|
2N7638-GATRANS SJT 650V 8A TO276 |
3,359 | 0.00 |
RFQ |
Datasheet |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 8A (Tc) (158°C) | - | 170mOhm @ 8A | - | - | - | 720 pF @ 35 V | - | 200W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount |
|
|
2N7639-GATRANS SJT 650V 15A TO257 |
2,531 | 0.00 |
RFQ |
Datasheet |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 15A (Tc) (155°C) | - | 105mOhm @ 15A | - | - | - | 1534 pF @ 35 V | - | 172W (Tc) | -55°C ~ 225°C (TJ) | Through Hole |
|
|
2N7640-GATRANS SJT 650V 16A TO276 |
2,578 | 0.00 |
RFQ |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 16A (Tc) (155°C) | - | 105mOhm @ 16A | - | - | - | 1534 pF @ 35 V | - | 330W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | |
|
GA03JT12-247TRANS SJT 1200V 3A TO247AB |
2,914 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 3A (Tc) (95°C) | - | 460mOhm @ 3A | - | - | - | - | - | 15W (Tc) | 175°C (TJ) | Through Hole |
|
|
GA06JT12-247TRANS SJT 1200V 6A TO247AB |
2,672 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 6A (Tc) (90°C) | - | 220mOhm @ 6A | - | - | - | - | - | - | 175°C (TJ) | Through Hole |
|
GA05JT12-263TRANS SJT 1200V 15A D2PAK |
3,236 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 15A (Tc) | - | - | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Surface Mount |
|
|
GA05JT12-247TRANS SJT 1200V 5A TO247AB |
3,776 | 0.00 |
RFQ |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 5A (Tc) | - | 280mOhm @ 5A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Through Hole | |
|
|
GA10JT12-247TRANS SJT 1200V 10A TO247AB |
3,174 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 10A (Tc) | - | 140mOhm @ 10A | - | - | - | - | - | 170W (Tc) | 175°C (TJ) | Through Hole |
|
|
GA20JT12-247TRANS SJT 1200V 20A TO247AB |
2,543 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 20A (Tc) | - | 70mOhm @ 20A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | Through Hole |
|
|
GA50JT17-247TRANS SJT 1700V 100A TO247 |
3,183 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 583W (Tc) | 175°C (TJ) | Through Hole |
|
GA05JT01-46TRANS SJT 100V 9A TO46 |
3,904 | 0.00 |
RFQ |
Datasheet |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 100 V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole |
|
GA100JT12-227TRANS SJT 1200V 160A SOT227 |
2,499 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400 pF @ 800 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
|
|
GA20SICP12-247TRANS SJT 1200V 45A TO247AB |
3,660 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 45A (Tc) | - | 50mOhm @ 20A | - | - | - | 3091 pF @ 800 V | - | 282W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
GA50JT12-263TRANSISTOR 1200V 100A TO263-7 |
2,802 | 0.00 |
RFQ |
Tube | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
GA100JT17-227TRANS SJT 1700V 160A SOT227 |
3,296 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400 pF @ 800 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
