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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G3R60MT07K750V 60M TO-247-4 G3R SIC MOSFET |
135 | 11.02 |
RFQ |
Datasheet |
Tube | G3R™ | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | - | - | - | - | - | Through Hole |
|
G3R20MT17NSIC MOSFET N-CH 100A SOT227 |
160 | 143.58 |
RFQ |
Datasheet |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 100A (Tc) | 15V | 26mOhm @ 75A, 15V | 2.7V @ 15mA | 400 nC @ 15 V | ±15V | 10187 pF @ 1000 V | - | 523W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
|
|
G3R12MT12K1200V 12M TO-247-4 G3R SIC MOSFE |
3,772 | 69.18 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 157A (Tc) | 15V, 18V | 13mOhm @ 100A, 18V | 2.7V @ 50mA | 288 nC @ 15 V | +22V, -10V | 9335 pF @ 800 V | - | 567W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
GA20JT12-263TRANS SJT 1200V 45A D2PAK |
2,726 | 38.13 |
RFQ |
Datasheet |
Tube | - | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 45A (Tc) | - | 60mOhm @ 20A | - | - | - | 3091 pF @ 800 V | - | 282W (Tc) | 175°C (TJ) | Surface Mount |
|
GA50JT12-247TRANS SJT 1200V 100A TO247AB |
2,107 | 99.01 |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | 7209 pF @ 800 V | - | 583W (Tc) | 175°C (TJ) | Through Hole |
|
G3R350MT12DSIC MOSFET N-CH 11A TO247-3 |
2,555 | 5.03 |
RFQ |
Datasheet |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 15V | 420mOhm @ 4A, 15V | 2.69V @ 2mA | 12 nC @ 15 V | ±15V | 334 pF @ 800 V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
G3R160MT12DSIC MOSFET N-CH 22A TO247-3 |
1,787 | 6.91 |
RFQ |
Datasheet |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 15V | 192mOhm @ 10A, 15V | 2.69V @ 5mA | 28 nC @ 15 V | ±15V | 730 pF @ 800 V | - | 123W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
G3R75MT12DSIC MOSFET N-CH 41A TO247-3 |
2,658 | 11.13 |
RFQ |
Datasheet |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 207W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
G2R50MT33K3300V 50M TO-247-4 SIC MOSFET |
3,394 | 325.24 |
RFQ |
Datasheet |
Tube | G2R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 63A (Tc) | 20V | 50mOhm @ 40A, 20V | 3.5V @ 10mA (Typ) | 340 nC @ 20 V | +25V, -10V | 7301 pF @ 1000 V | Standard | 536W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
G3R60MT07D750V 60M TO-247-3 G3R SIC MOSFET |
2,704 | 10.75 |
RFQ |
Datasheet |
Tube | G3R™ | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | - | - | - | - | - | Through Hole |
|
|
G3R60MT07J750V 60M TO-263-7 G3R SIC MOSFET |
2,444 | 11.34 |
RFQ |
Datasheet |
Tube | G3R™ | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | - | - | - | - | - | Surface Mount |
|
|
G2R1000MT33JSIC MOSFET N-CH 4A TO263-7 |
3,983 | 19.82 |
RFQ |
Datasheet |
Tube | G2R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 4A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.5V @ 2mA | 21 nC @ 20 V | +20V, -5V | 238 pF @ 1000 V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
GA10JT12-263TRANS SJT 1200V 25A |
3,481 | 20.74 |
RFQ |
Datasheet |
Tube | - | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 120mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | Surface Mount |
|
GA05JT03-46TRANS SJT 300V 9A TO46 |
3,602 | 70.39 |
RFQ |
Datasheet |
Bulk | - | Not For New Designs | - | SiC (Silicon Carbide Junction Transistor) | 300 V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole |
|
|
G3R160MT12JSIC MOSFET N-CH 22A TO263-7 |
2,578 | 7.69 |
RFQ |
Datasheet |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 15V | 192mOhm @ 10A, 15V | 2.69V @ 5mA | 28 nC @ 15 V | ±15V | 730 pF @ 800 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
GA10SICP12-263TRANS SJT 1200V 25A D2PAK |
2,833 | 29.68 |
RFQ |
Datasheet |
Tube | - | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 100mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | Surface Mount |
|
|
GA50JT06-258TRANS SJT 600V 100A TO258 |
2,358 | 693.00 |
RFQ |
Datasheet |
Bulk | - | Active | - | SiC (Silicon Carbide Junction Transistor) | 600 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 769W (Tc) | -55°C ~ 225°C (TJ) | Through Hole |
|
|
GA08JT17-247TRANS SJT 1700V 8A TO247AB |
2,525 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 8A (Tc) (90°C) | - | 250mOhm @ 8A | - | - | - | - | - | 48W (Tc) | 175°C (TJ) | Through Hole |
|
|
GA04JT17-247TRANS SJT 1700V 4A TO247AB |
3,634 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 4A (Tc) (95°C) | - | 480mOhm @ 4A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Through Hole |
|
|
GA16JT17-247TRANS SJT 1700V 16A TO247AB |
2,413 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 16A (Tc) (90°C) | - | 110mOhm @ 16A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | Through Hole |
