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GeneSiC Semiconductor GA10SICP12-263

Part No. GA10SICP12-263

Manufacturer GeneSiC Semiconductor

Category Transistors - FETs, MOSFETs - Single

Package TO-263-7

Datasheet GA10SICP12-263.pdf

Description TRANS SJT 1200V 25A D2PAK

Quantity

RFQ

GA10SICP12-263 Details

Specifications FAQ Shopping Process

Packaging Tube

Series -

ProductStatus Active

FETType -

Technology SiC (Silicon Carbide Junction Transistor)

DraintoSourceVoltage(Vdss) 1200 V

Current-ContinuousDrain(Id)@25°C 25A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) -

RdsOn(Max)@IdVgs 100mOhm @ 10A

Vgs(th)(Max)@Id -

GateCharge(Qg)(Max)@Vgs -

Vgs(Max) -

InputCapacitance(Ciss)(Max)@Vds 1403 pF @ 800 V

FETFeature -

PowerDissipation(Max) 170W (Tc)

OperatingTemperature 175°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet GA10SICP12-263.pdf

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GA10SICP12-263 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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