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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPH3206LDG-TRGANFET N-CH 600V 17A 3PQFN |
3,285 | 0.00 |
RFQ |
Datasheet |
Tray | - | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 8V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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|
TP65H150G4LSGGAN FET N-CH 650V PQFN |
2,379 | 0.00 |
RFQ |
Tray | - | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 13A (Tc) | 10V | 180mOhm @ 8.5A, 10V | 4.8V @ 500µA | 8 nC @ 10 V | ±20V | 598 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
TP65H070LSGGANFET N-CH 650V 25A 3PQFN |
2,036 | 0.00 |
RFQ |
Datasheet |
Tube | TP65H070L | Discontinued at Mosen | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3 nC @ 10 V | ±20V | 600 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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|
TP65H150LSGGANFET N-CH 650V 15A 3PQFN |
2,505 | 0.00 |
RFQ |
Datasheet |
Tube | - | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 15A (Tc) | 10V | 180mOhm @ 10A, 10V | 4.8V @ 500µA | 7.1 nC @ 10 V | ±20V | 576 pF @ 400 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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|
TPH3206LSGBGANFET N-CH 650V 16A 3PQFN |
3,413 | 0.00 |
RFQ |
Datasheet |
Tray | - | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 16A (Tc) | 8V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2 nC @ 4.5 V | ±18V | 720 pF @ 480 V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
