Upload BOM
Shipping address
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHP068N60EF-GE3MOSFET N-CH 600V 41A TO220AB |
3,504 | 5.75 |
RFQ |
Datasheet |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 41A (Tc) | 10V | 68mOhm @ 16A, 10V | 5V @ 250µA | 77 nC @ 10 V | ±30V | 2628 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHP24N65E-E3MOSFET N-CH 650V 24A TO220AB |
3,606 | 5.98 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHG068N60EF-GE3MOSFET N-CH 600V 41A TO247AC |
3,945 | 6.35 |
RFQ |
Datasheet |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 41A (Tc) | 10V | 68mOhm @ 16A, 10V | 5V @ 250µA | 77 nC @ 10 V | ±30V | 2628 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHB28N60EF-GE3MOSFET N-CH 600V 28A D2PAK |
3,570 | 6.50 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2714 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHB33N60EF-GE3MOSFET N-CH 600V 33A D2PAK |
2,731 | 6.81 |
RFQ |
Datasheet |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 98mOhm @ 16.5A, 10V | 4V @ 250µA | 155 nC @ 10 V | ±30V | 3454 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHG052N60EF-GE3MOSFET N-CH 600V 48A TO247AC |
3,103 | 7.06 |
RFQ |
Datasheet |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 52mOhm @ 23A, 10V | 5V @ 250µA | 101 nC @ 10 V | ±30V | 3380 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHB065N60E-GE3MOSFET N-CH 600V 40A D2PAK |
2,092 | 7.17 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 2700 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFP17N50LPBFMOSFET N-CH 500V 16A TO247-3 |
3,726 | 7.39 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 320mOhm @ 9.9A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±30V | 2760 pF @ 25 V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRFPC60PBFMOSFET N-CH 600V 16A TO247-3 |
2,621 | 7.47 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHP065N60E-GE3MOSFET N-CH 600V 40A TO220AB |
2,840 | 7.61 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 2700 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRFP23N50LPBFMOSFET N-CH 500V 23A TO247-3 |
3,740 | 7.86 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 23A (Tc) | 10V | 235mOhm @ 14A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±30V | 3600 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRFP31N50LPBFMOSFET N-CH 500V 31A TO247-3 |
3,719 | 8.02 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 31A (Tc) | 10V | 180mOhm @ 19A, 10V | 5V @ 250µA | 210 nC @ 10 V | ±30V | 5000 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHG47N60AE-GE3MOSFET N-CH 600V 43A TO247AC |
3,692 | 8.16 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | 10V | 65mOhm @ 24A, 10V | 4V @ 250µA | 182 nC @ 10 V | ±30V | 3600 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHG73N60E-GE3MOSFET N-CH 600V 73A TO247AC |
2,643 | 13.26 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 39mOhm @ 36A, 10V | 4V @ 250µA | 362 nC @ 10 V | ±30V | 7700 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHG47N60AEF-GE3MOSFET N-CH 600V 40A TO247AC |
2,740 | 9.16 |
RFQ |
Datasheet |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 70mOhm @ 23.5A, 10V | 4V @ 250µA | 189 nC @ 10 V | ±30V | 3576 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHG050N60E-GE3MOSFET N-CH 600V 51A TO247AC |
2,478 | 10.29 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 51A (Tc) | 10V | 50mOhm @ 23A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±30V | 3459 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SI8823EDB-T2-E1MOSFET P-CH 20V 2.7A 4MICRO FOOT |
3,008 | 0.43 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen III | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.7A (Tc) | 1.5V, 4.5V | 95mOhm @ 1A, 4.5V | 800mV @ 250µA | 10 nC @ 4.5 V | ±8V | 580 pF @ 10 V | - | 900mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI8821EDB-T2-E1MOSFET P-CH 30V 4MICROFOOT |
3,640 | 0.50 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.6A (Ta) | 2.5V, 4.5V | 135mOhm @ 1A, 4.5V | 1.3V @ 250µA | 17 nC @ 10 V | ±12V | 440 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI3473DDV-T1-GE3MOSFET P-CHANNEL 12V 8A 6TSOP |
2,024 | 0.53 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen III | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 8A (Tc) | 1.8V, 4.5V | 17.8mOhm @ 8.7A, 4.5V | 1V @ 250µA | 57 nC @ 8 V | ±8V | 1975 pF @ 6 V | - | 3.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SI8806DB-T2-E1MOSFET N-CH 12V 4MICROFOOT |
3,642 | 0.48 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 2.8A (Ta) | 1.8V, 4.5V | 43mOhm @ 1A, 4.5V | 1V @ 250µA | 17 nC @ 8 V | ±8V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
