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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRL640PBFMOSFET N-CH 200V 17A TO220AB |
2,503 | 2.60 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 17A (Tc) | 4V, 5V | 180mOhm @ 10A, 5V | 2V @ 250µA | 66 nC @ 5 V | ±10V | 1800 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFB11N50APBF-BE3MOSFET N-CH 500V 11A TO220AB |
3,084 | 2.63 |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±30V | 1423 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
|
IRFBG30PBFMOSFET N-CH 1000V 3.1A TO220AB |
3,546 | 2.68 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3.1A (Tc) | 10V | 5Ohm @ 1.9A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 980 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHF12N65E-GE3MOSFET N-CH 650V 12A TO220 |
2,846 | 2.68 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±30V | 1224 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHA15N80AE-GE3MOSFET N-CH 800V 6A TO220 |
3,094 | 2.73 |
RFQ |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 350mOhm @ 7.5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1093 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
SQM120N06-3M5L_GE3MOSFET N-CH 60V 120A TO263 |
3,043 | 4.47 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 4.5V, 10V | 3.5mOhm @ 29A, 10V | 2.5V @ 250µA | 330 nC @ 10 V | ±20V | 14700 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SQM200N04-1M1L_GE3MOSFET N-CH 40V 200A TO263-7 |
3,563 | 4.47 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2.5V @ 250µA | 413 nC @ 10 V | ±20V | 20655 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SIHB15N80AE-GE3MOSFET N-CH 800V 13A D2PAK |
3,832 | 2.86 |
RFQ |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 350mOhm @ 7.5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1093 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
IRFIBE30GPBFMOSFET N-CH 800V 2.1A TO220-3 |
3,620 | 2.96 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.1A (Tc) | 10V | 3Ohm @ 1.3A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFBE30LPBFMOSFET N-CH 800V 4.1A I2PAK |
2,140 | 2.99 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRLIZ44GPBFMOSFET N-CH 60V 30A TO220-3 |
3,869 | 2.99 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 4V, 5V | 28mOhm @ 18A, 5V | 2V @ 250µA | 66 nC @ 5 V | ±10V | 3300 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
SIHD180N60E-GE3MOSFET N-CH 600V 19A TO252AA |
3,011 | 3.01 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 195mOhm @ 9.5A, 10V | 5V @ 250µA | 32 nC @ 10 V | ±30V | 1080 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SUP10250E-GE3MOSFET N-CH 250V 63A TO220AB |
2,055 | 3.03 |
RFQ |
Datasheet |
Tube | ThunderFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 63A (Tc) | 7.5V, 10V | - | 4V @ 250µA | 88 nC @ 10 V | ±20V | - | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
SIHJ10N60E-T1-GE3MOSFET N-CH 600V 10A PPAK SO-8 |
2,224 | 3.06 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 360mOhm @ 5A, 10V | 4.5V @ 250µA | 50 nC @ 10 V | ±30V | 784 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHB12N65E-GE3MOSFET N-CH 650V 12A D2PAK |
3,819 | 3.07 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±30V | 1224 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHP20N50E-GE3MOSFET N-CH 500V 19A TO220AB |
2,545 | 3.08 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Tc) | 10V | 184mOhm @ 10A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRF840LCLPBFMOSFET N-CH 500V 8A I2PAK |
3,988 | 3.09 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHG15N80AE-GE3MOSFET N-CH 800V 13A TO247AC |
3,376 | 3.11 |
RFQ |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 350mOhm @ 7.5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1093 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
SIHH26N60E-T1-GE3MOSFET N-CH 600V 25A PPAK 8 X 8 |
2,658 | 5.88 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 135mOhm @ 13A, 10V | 4V @ 250µA | 116 nC @ 10 V | ±30V | 2815 pF @ 100 V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFI840GPBFMOSFET N-CH 500V 4.6A TO220-3 |
2,892 | 3.14 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.6A (Tc) | 10V | 850mOhm @ 2.8A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
