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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFZ40PBF

IRFZ40PBF

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix

200 2.91

RFQ

IRFZ40PBF

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHB23N60E-GE3

SIHB23N60E-GE3

MOSFET N-CH 600V 23A D2PAK

Vishay Siliconix

3,653 4.11

RFQ

SIHB23N60E-GE3

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±30V 2418 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHF22N60E-GE3

SIHF22N60E-GE3

MOSFET N-CH 600V 21A TO220

Vishay Siliconix

2,535 4.23

RFQ

SIHF22N60E-GE3

Datasheet

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB22N60E-GE3

SIHB22N60E-GE3

MOSFET N-CH 600V 21A D2PAK

Vishay Siliconix

3,609 4.31

RFQ

SIHB22N60E-GE3

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP140PBF

IRFP140PBF

MOSFET N-CH 100V 31A TO247-3

Vishay Siliconix

2,509 4.34

RFQ

IRFP140PBF

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 77mOhm @ 19A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP254PBF

IRFP254PBF

MOSFET N-CH 250V 23A TO247-3

Vishay Siliconix

1,620 4.42

RFQ

IRFP254PBF

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 23A (Tc) 10V 140mOhm @ 14A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2700 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP70101EL-GE3

SUP70101EL-GE3

MOSFET P-CH 100V 120A TO220AB

Vishay Siliconix

2,009 3.11

RFQ

SUP70101EL-GE3

Datasheet

Tube TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 4.5V, 10V - 2.5V @ 250µA 190 nC @ 10 V ±20V 7000 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHB125N60EF-GE3

SIHB125N60EF-GE3

MOSFET N-CH 600V 25A D2PAK

Vishay Siliconix

3,257 4.61

RFQ

SIHB125N60EF-GE3

Datasheet

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH27N60EF-T1-GE3

SIHH27N60EF-T1-GE3

MOSFET N-CH 600V 29A PPAK 8 X 8

Vishay Siliconix

2,299 7.33

RFQ

SIHH27N60EF-T1-GE3

Datasheet

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 100mOhm @ 13.5A, 10V 4V @ 250µA 135 nC @ 10 V ±30V 2609 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFPF40PBF

IRFPF40PBF

MOSFET N-CH 900V 4.7A TO247-3

Vishay Siliconix

2,180 4.66

RFQ

IRFPF40PBF

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 4.7A (Tc) 10V 2.5Ohm @ 2.8A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 1600 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP17N80E-BE3

SIHP17N80E-BE3

MOSFET N-CH 800V 15A TO220AB

Vishay Siliconix

2,680 5.08

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP57N20-33-E3

SUP57N20-33-E3

MOSFET N-CH 200V 57A TO220AB

Vishay Siliconix

2,432 4.90

RFQ

SUP57N20-33-E3

Datasheet

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 57A (Tc) 10V 33mOhm @ 30A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 5100 pF @ 25 V - 3.75W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP048PBF

IRFP048PBF

MOSFET N-CH 60V 70A TO247-3

Vishay Siliconix

3,800 4.98

RFQ

IRFP048PBF

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 18mOhm @ 44A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHH070N60EF-T1GE3

SIHH070N60EF-T1GE3

MOSFET N-CH 600V 36A PPAK 8 X 8

Vishay Siliconix

2,275 8.22

RFQ

SIHH070N60EF-T1GE3

Datasheet

Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 71mOhm @ 15A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2647 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUP40N25-60-E3

SUP40N25-60-E3

MOSFET N-CH 250V 40A TO220AB

Vishay Siliconix

2,159 5.28

RFQ

SUP40N25-60-E3

Datasheet

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 250 V 40A (Tc) 6V, 10V 60mOhm @ 20A, 10V 4V @ 250µA 140 nC @ 10 V ±30V 5000 pF @ 25 V - 3.75W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHH068N60E-T1-GE3

SIHH068N60E-T1-GE3

MOSFET N-CH 600V 34A PPAK 8 X 8

Vishay Siliconix

2,489 8.53

RFQ

SIHH068N60E-T1-GE3

Datasheet

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 68mOhm @ 15A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 2650 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUG80050E-GE3

SUG80050E-GE3

MOSFET N-CH 150V 100A TO247AC

Vishay Siliconix

2,496 5.39

RFQ

SUG80050E-GE3

Datasheet

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 7.5V, 10V 5.4mOhm @ 20A, 10V 4V @ 250µA 165 nC @ 10 V ±20V 6250 pF @ 75 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHB120N60E-GE3

SIHB120N60E-GE3

MOSFET N-CH 600V 25A D2PAK

Vishay Siliconix

3,585 5.49

RFQ

SIHB120N60E-GE3

Datasheet

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1562 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUP85N15-21-E3

SUP85N15-21-E3

MOSFET N-CH 150V 85A TO220AB

Vishay Siliconix

3,511 5.66

RFQ

SUP85N15-21-E3

Datasheet

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 85A (Tc) 10V 21mOhm @ 30A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 4750 pF @ 25 V - 2.4W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHF068N60EF-GE3

SIHF068N60EF-GE3

MOSFET N-CH 600V 16A TO220

Vishay Siliconix

3,761 5.72

RFQ

SIHF068N60EF-GE3

Datasheet

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 68mOhm @ 16A, 10V 5V @ 250µA 77 nC @ 10 V ±30V 2628 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
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