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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHH125N60EF-T1GE3MOSFET N-CH 600V 23A PPAK 8 X 8 |
3,239 | 3.76 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 125mOhm @ 12A, 10V | 5V @ 250µA | 47 nC @ 10 V | ±30V | 1533 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHH28N60E-T1-GE3MOSFET N-CH 600V 29A PPAK 8 X 8 |
3,697 | 3.79 |
RFQ |
Datasheet |
Bulk | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 98mOhm @ 14A, 10V | 5V @ 250µA | 129 nC @ 10 V | ±30V | 2614 pF @ 100 V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHF16N50C-E3MOSFET N-CH 500V 16A TO220 |
3,842 | 3.83 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHP28N65EF-GE3MOSFET N-CH 650V 28A TO220AB |
3,728 | 3.83 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 146 nC @ 10 V | ±30V | 3249 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHB24N65ET1-GE3MOSFET N-CH 650V 24A TO263 |
3,709 | 3.89 |
RFQ |
Datasheet |
Tape & Reel (TR) | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHB24N65ET5-GE3MOSFET N-CH 650V 24A TO263 |
2,448 | 3.89 |
RFQ |
Datasheet |
Tape & Reel (TR) | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHH21N65E-T1-GE3MOSFET N-CH 650V 20.3A PPAK 8X8 |
2,223 | 3.92 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.3A (Tc) | 10V | 170mOhm @ 11A, 10V | 4V @ 250µA | 99 nC @ 10 V | ±30V | 2404 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHG24N65E-E3MOSFET N-CH 650V 24A TO247AC |
3,446 | 4.02 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHG24N65E-GE3MOSFET N-CH 650V 24A TO247AC |
3,724 | 4.02 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHB33N60ET5-GE3MOSFET N-CH 600V 33A TO263 |
2,282 | 4.02 |
RFQ |
Datasheet |
Tape & Reel (TR) | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFPC50LCPBFMOSFET N-CH 600V 11A TO247-3 |
2,544 | 4.26 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 600mOhm @ 6.6A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHG33N60E-E3MOSFET N-CH 600V 33A TO247AC |
2,036 | 4.33 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHG28N60EF-GE3MOSFET N-CH 600V 28A TO247AC |
2,612 | 4.35 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2714 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHH26N60EF-T1-GE3MOSFET N-CH 600V 24A PPAK 8 X 8 |
3,689 | 7.02 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 141mOhm @ 13A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2744 pF @ 100 V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHH100N60E-T1-GE3MOSFET N-CH 600V 28A PPAK 8 X 8 |
2,283 | 4.45 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 100mOhm @ 13.5A, 10V | 5V @ 250µA | 53 nC @ 10 V | ±30V | 1850 pF @ 100 V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHG28N65EF-GE3MOSFET N-CH 650V 28A TO247AC |
2,812 | 4.55 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 146 nC @ 10 V | ±30V | 3249 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHG33N60EF-GE3MOSFET N-CH 600V 33A TO247AC |
3,345 | 4.60 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 98mOhm @ 16.5A, 10V | 4V @ 250µA | 155 nC @ 10 V | ±30V | 3454 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHG33N65E-GE3MOSFET N-CH 650V 32.4A TO247AC |
3,137 | 4.68 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32.4A (Tc) | 10V | 105mOhm @ 16.5A, 10V | 4V @ 250µA | 173 nC @ 10 V | ±30V | 4040 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHP38N60EF-GE3MOSFET N-CH 600V 40A TO220AB |
2,111 | 5.12 |
RFQ |
Datasheet |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 70mOhm @ 23.5A, 10V | 4V @ 250µA | 189 nC @ 10 V | ±30V | 3576 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHH24N65EF-T1-GE3MOSFET N-CH 650V 23A PPAK 8 X 8 |
3,038 | 5.12 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 2780 pF @ 100 V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
