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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIDR638DP-T1-RE3N-CHANNEL 40-V (D-S) MOSFET |
2,443 | 2.38 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 64.6A (Ta), 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 204 nC @ 10 V | +20V, -16V | 10500 pF @ 20 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIHD14N60ET5-GE3N-CHANNEL 600V |
2,182 | 2.40 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±30V | 1205 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIHD14N60ET4-GE3N-CHANNEL 600V |
2,728 | 2.40 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±30V | 1205 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SQD40061EL-T4_GE3P-CHANNEL 40-V (D-S) 175C MOSFET |
2,590 | 2.45 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 5.1mOhm @ 30A, 10V | 2.5V @ 250µA | 280 nC @ 10 V | ±20V | 14500 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIDR402DP-T1-RE3N-CHANNEL 40-V (D-S) MOSFET |
2,609 | 2.49 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 64.6A (Ta), 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 165 nC @ 10 V | +20V, -16V | 9100 pF @ 20 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI7148DP-T1-E3MOSFET N-CH 75V 28A PPAK SO-8 |
2,877 | 2.56 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 28A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.5V @ 250µA | 100 nC @ 10 V | ±20V | 2900 pF @ 35 V | - | 5.4W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI7846DP-T1-E3MOSFET N-CH 150V 4A PPAK SO-8 |
2,720 | 2.56 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 4A (Ta) | 10V | 50mOhm @ 5A, 10V | 4.5V @ 250µA | 36 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIR570DP-T1-RE3N-CHANNEL 150 V (D-S) MOSFET POW |
3,152 | 2.59 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 19A (Ta), 77.4A (Tc) | 7.5V, 10V | 7.9mOhm @ 20A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 3740 pF @ 75 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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|
SIDR402EP-T1-RE3N-CHANNEL 40 V (D-S) 175C MOSFET |
2,417 | 2.63 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 65.2A (Ta), 291A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 165 nC @ 10 V | +20V, -16V | 9100 pF @ 20 V | - | 7.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIDR610DP-T1-RE3N-CHANNEL 200-V (D-S) MOSFET |
2,810 | 2.63 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 8.9A (Ta), 39.6A (Tc) | 7.5V, 10V | 31.9mOhm @ 10A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 1380 pF @ 100 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHA12N60E-GE3N-CHANNEL 600V |
3,965 | 2.65 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIDR608EP-T1-RE3N-CHANNEL 45 V (D-S) 175C MOSFET |
3,479 | 2.76 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 56A (Ta), 228A (Tc) | 4.5V, 10V | 1.2mOhm @ 20A, 10V | 2.3V @ 250µA | 167 nC @ 10 V | +20V, -16V | 8900 pF @ 20 V | - | 7.5W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIDR140DP-T1-RE3N-CHANNEL 25-V (D-S) MOSFET |
2,894 | 2.82 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 79A (Ta), 100A (Tc) | 4.5V, 10V | 0.67mOhm @ 20A, 10V | 2.1V @ 250µA | 170 nC @ 10 V | +20V, -16V | 8150 pF @ 10 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SQJQ148ER-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) |
2,346 | 2.85 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 372A (Tc) | 10V | 1.5mOhm @ 20A, 10V | 3.5V @ 250µA | 102 nC @ 10 V | ±20V | 5750 pF @ 25 V | - | 394W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF840BPBF-BE3MOSFET N-CH 500V 8.7A TO220AB |
2,080 | 1.47 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8.7A (Tc) | - | 850mOhm @ 4A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 527 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIDR220DP-T1-RE3N-CHANNEL 25-V (D-S) MOSFET |
2,637 | 2.90 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 87.7A (Ta), 100A (Tc) | 4.5V, 10V | 5.8mOhm @ 20A, 10V | 2.1V @ 250µA | 200 nC @ 10 V | +16V, -12V | 10850 pF @ 10 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFR014PBF-BE3MOSFET N-CH 60V 7.7A DPAK |
3,476 | 1.53 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.7A (Tc) | - | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIDR5802EP-T1-RE3N-CHANNEL 80 V (D-S) 175C MOSFET |
2,851 | 3.01 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 34.2A (Ta), 153A (Tc) | 7.5V, 10V | 2.9mOhm @ 20A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 3020 pF @ 40 V | - | 7.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFR010PBF-BE3MOSFET N-CH 50V 8.2A DPAK |
2,137 | 1.54 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 8.2A (Tc) | - | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±20V | 250 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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|
SIHA20N50E-GE3N-CHANNEL 500V |
2,770 | 3.10 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Tc) | 10V | 184mOhm @ 10A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
