Upload BOM
Shipping address
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHB21N80AE-GE3MOSFET N-CH 800V 17.4A D2PAK |
3,616 | 3.04 |
RFQ |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17.4A (Tc) | 10V | 235mOhm @ 11A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±30V | 1388 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
SIHA120N60E-GE3MOSFET N-CH 600V 25A TO220 |
3,534 | 5.50 |
RFQ |
Datasheet |
Bulk | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1562 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFPG30PBFMOSFET N-CH 1000V 3.1A TO247-3 |
3,445 | 3.71 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3.1A (Tc) | 10V | 5Ohm @ 1.9A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 980 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SQD40N10-25_GE3MOSFET N-CH 100V 40A TO252 |
2,000 | 6.67 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4.5V, 10V | 25mOhm @ 40A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | ±20V | 3380 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SIHG17N80E-GE3MOSFET N-CH 800V 15A TO247AC |
2,219 | 5.67 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2408 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHB068N60EF-GE3MOSFET N-CH 600V 41A D2PAK |
2,403 | 5.81 |
RFQ |
Datasheet |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 41A (Tc) | 10V | 68mOhm @ 16A, 10V | 5V @ 250µA | 77 nC @ 10 V | ±30V | 2628 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHP24N65E-GE3MOSFET N-CH 650V 24A TO220AB |
3,189 | 5.98 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHG24N65EF-GE3MOSFET N-CH 650V 24A TO247AC |
3,396 | 6.56 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2774 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHP30N60E-GE3MOSFET N-CH 600V 29A TO220AB |
2,449 | 6.27 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHB24N65EF-GE3MOSFET N-CH 650V 24A D2PAK |
2,997 | 6.30 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2774 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHP33N60EF-GE3MOSFET N-CH 600V 33A TO220AB |
2,851 | 6.68 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 98mOhm @ 16.5A, 10V | 4V @ 250µA | 155 nC @ 10 V | ±30V | 3454 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRFPC50PBFMOSFET N-CH 600V 11A TO247-3 |
2,797 | 6.70 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 600mOhm @ 6A, 10V | 4V @ 250µA | 140 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHP38N60E-GE3MOSFET N-CH 600V 43A TO220AB |
2,576 | 6.93 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | 10V | 65mOhm @ 19A, 10V | 4V @ 250µA | 183 nC @ 10 V | ±30V | 3600 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRFPC60LCPBFMOSFET N-CH 600V 16A TO247-3 |
3,172 | 6.93 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SUP85N10-10-E3MOSFET N-CH 100V 85A TO220AB |
3,616 | 6.94 |
RFQ |
Datasheet |
Tube | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 85A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 3V @ 250µA | 160 nC @ 10 V | ±20V | 6550 pF @ 25 V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
SIHG35N60E-GE3MOSFET N-CH 600V 32A TO247AC |
3,971 | 6.98 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 94mOhm @ 17A, 10V | 4V @ 250µA | 132 nC @ 10 V | ±30V | 2760 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHG33N60E-GE3MOSFET N-CH 600V 33A TO247AC |
2,163 | 7.00 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHW33N60E-GE3MOSFET N-CH 600V 33A TO247AD |
2,903 | 7.00 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHG35N60EF-GE3MOSFET N-CH 600V 32A TO247AC |
3,899 | 7.16 |
RFQ |
Datasheet |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134 nC @ 10 V | ±30V | 2568 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHG40N60E-GE3MOSFET N-CH 600V 40A TO247AC |
3,385 | 7.21 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 75mOhm @ 20A, 10V | 4V @ 250µA | 197 nC @ 10 V | ±30V | 4436 pF @ 100 V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
