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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WNSC101200WQSILICON CARBIDE POWER DIODE |
1,200 | 8.93 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 510pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 10A | 175°C (Max) | 1.6 V @ 10 A | |
|
BYC20-600,127DIODE GEN PURP 500V 20A TO220AC |
5,415 | 1.86 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 200 µA @ 600 V | 500 V | 20A | 150°C (Max) | 2.9 V @ 20 A | |
|
|
WNSC101200CWQSILICON CARBIDE POWER DIODE |
480 | 10.51 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 10A | 175°C (Max) | 1.6 V @ 5 A | |
|
|
WNSC2D06650TJSILICON CARBIDE SCHOTTKY DIODE |
2,994 | 2.11 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 198pF @ 1V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 6A | 175°C | 1.7 V @ 6 A | |
|
WNSC04650T6JSILICON CARBIDE POWER DIODE |
1,943 | 2.23 |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 141pF @ 1V, 1MHz | 0 ns | 25 µA @ 650 V | 650 V | 4A | 175°C (Max) | 1.7 V @ 4 A | ||
|
|
WNSC201200WQSILICON CARBIDE POWER DIODE |
1,179 | 14.41 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.02nF @ 1V, 1MHz | 0 ns | 220 µA @ 1200 V | 1200 V | 20A | 175°C (Max) | 1.6 V @ 20 A | |
|
|
WNSC201200CWQSILICON CARBIDE POWER DIODE |
476 | 15.14 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 510pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 20A | 175°C (Max) | 1.6 V @ 10 A | |
|
NXPSC04650QDIODE SCHOTTKY 650V 4A TO220AC |
2,000 | 2.48 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 130pF @ 1V, 1MHz | 0 ns | 170 µA @ 650 V | 650 V | 4A | 175°C (Max) | 1.7 V @ 4 A | |
|
WNSC401200CWQSILICON CARBIDE POWER DIODE |
480 | 17.79 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 810pF @ 1V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 40A | 175°C (Max) | 1.75 V @ 20 A | |
|
BYC30W-600PQDIODE GEN PURP 600V 30A TO247-2 |
2,609 | 2.68 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 22 ns | 10 µA @ 600 V | 600 V | 30A | 175°C (Max) | 2.75 V @ 30 A | |
|
NXPSC04650D6JDIODE SCHOTTKY 650V 4A DPAK |
2,439 | 2.78 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 130pF @ 1V, 1MHz | 0 ns | 170 µA @ 650 V | 650 V | 4A | 175°C (Max) | 1.7 V @ 4 A | |
|
|
WNSC021200QSILICON CARBIDE POWER DIODE |
2,970 | 2.94 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 109pF @ 1V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 2A | 175°C (Max) | 1.6 V @ 2 A | |
|
BYV29B-500,118DIODE GEN PURP 500V 9A D2PAK |
400 | 1.08 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 50 µA @ 500 V | 500 V | 9A | 150°C (Max) | 1.25 V @ 8 A | |
|
|
BYW29ED-200,118DIODE GEN PURP 200V 8A DPAK |
112 | 1.11 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 8A | 150°C (Max) | 1.3 V @ 20 A | |
|
|
WNSC06650T6JSILICON CARBIDE POWER DIODE |
595 | 3.03 |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 190pF @ 1V, 1MHz | 0 ns | 40 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | ||
|
|
WND08P16DJSTANDARD POWER DIODE |
2,436 | 0.94 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1600 V | 1600 V | 8A | 150°C | 1.25 V @ 8 A | |
|
BYV10MX-600PQULTRAFAST POWER DIODE IN 2-LEADS |
2,051 | 0.63 |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 600 V | 600 V | 10A | 175°C | 2 V @ 10 A | ||
|
|
BYV10ED-600PJDIODE GEN PURP 600V 10A DPAK |
2,389 | 0.91 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 600 V | 600 V | 10A | 175°C (Max) | 2 V @ 10 A | |
|
|
WNSC2D06650DJSILICON CARBIDE SCHOTTKY DIODE |
3,938 | 1.85 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 198pF @ 1V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 6A | 175°C | 1.7 V @ 6 A | |
|
|
WNSC2D08650DJSILICON CARBIDE SCHOTTKY DIODE |
3,614 | 2.34 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 260pF @ 1V, 1MHz | 0 ns | 40 µA @ 650 V | 650 V | 8A | 175°C | 1.7 V @ 8 A |
