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Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
BYC5-600,127 DIODE GEN PURP 500V 5A TO220AC WeEn Semiconductors	5,562	0.93	RFQ	Datasheet	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	100 µA @ 600 V	500 V	5A	150°C (Max)	2.9 V @ 5 A
WND10P08XQ STANDARD POWER DIODE WeEn Semiconductors	4,852	0.94	RFQ	Datasheet	Tube	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 800 V	800 V	10A	150°C	1.3 V @ 10 A
WND08P16XQ STANDARD POWER DIODE WeEn Semiconductors	4,374	0.94	RFQ	Datasheet	Tube	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	50 µA @ 1600 V	1600 V	8A	150°C	1.2 V @ 8 A
NXPSC066506Q DIODE SCHOTTKY 650V 6A TO220AC WeEn Semiconductors	3,000	3.85	RFQ	Datasheet	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	190pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	6A	175°C (Max)	1.7 V @ 6 A
NXPSC06650X6Q DIODE SCHOTTKY 650V 6A TO220F WeEn Semiconductors	2,997	4.01	RFQ	Datasheet	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	190pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	6A	175°C (Max)	1.7 V @ 6 A
NXPSC10650B6J DIODE SCHOTTKY 650V 10A D2PAK WeEn Semiconductors	3,190	6.48	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	300pF @ 1V, 1MHz	0 ns	250 µA @ 650 V	650 V	10A	175°C (Max)	1.7 V @ 10 A
NXPSC06650B6J DIODE SCHOTTKY 650V 6A D2PAK WeEn Semiconductors	3,190	3.91	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	190pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	6A	175°C (Max)	1.7 V @ 6 A
WNSC12650WQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	1,200	4.36	RFQ	Datasheet	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	328pF @ 1V, 1MHz	0 ns	60 µA @ 650 V	650 V	12A	175°C	1.7 V @ 12 A
NXPSC12650B6J SILICON CARBIDE POWER DIODE WeEn Semiconductors	6,400	7.05	RFQ		Cut Tape (CT),Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	380pF @ 1V, 1MHz	0 ns	80 µA @ 650 V	650 V	12A	175°C (Max)	1.7 V @ 12 A
BYC405X-400PQ DUAL HYPERFAST POWER DIODE WeEn Semiconductors	4,098	1.03	RFQ		Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	40 ns	10 µA @ 400 V	400 V	10A	150°C	1.5 V @ 5 A
WNSC2D101200WQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	3,000	4.97	RFQ	Datasheet	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	490pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A	175°C	1.65 V @ 10 A
NXPSC086506Q DIODE SCHOTTKY 650V 8A TO220AC WeEn Semiconductors	3,000	5.13	RFQ	Datasheet	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	260pF @ 1V, 1MHz	0 ns	230 µA @ 650 V	650 V	8A	175°C (Max)	1.7 V @ 8 A
NXPSC08650X6Q DIODE SCHOTTKY 650V 8A TO220F WeEn Semiconductors	2,998	5.13	RFQ	Datasheet	Bulk	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	260pF @ 1V, 1MHz	0 ns	230 µA @ 650 V	650 V	8A	175°C (Max)	1.7 V @ 8 A
NXPSC08650D6J DIODE SCHOTTKY 650V 8A DPAK WeEn Semiconductors	7,184	5.07	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	260pF @ 1V, 1MHz	0 ns	230 µA @ 650 V	650 V	8A	175°C (Max)	1.7 V @ 8 A
WNSC6D06650Q SILICON CARBIDE SCHOTTKY DIODE I WeEn Semiconductors	3,000	2.68	RFQ		Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	327pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	6A	175°C	1.4 V @ 6 A
BYC30WT-600PQ DIODE GEN PURP 600V 30A TO247-3 WeEn Semiconductors	2,928	2.68	RFQ	Datasheet	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	22 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	2.75 V @ 30 A
NXPSC106506Q DIODE SCHOTTKY 650V 10A TO220AC WeEn Semiconductors	3,000	6.41	RFQ	Datasheet	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	300pF @ 1V, 1MHz	0 ns	250 µA @ 650 V	650 V	10A	175°C (Max)	1.7 V @ 10 A
NXPSC10650X6Q DIODE SCHOTTKY 650V 10A TO220F WeEn Semiconductors	3,000	6.41	RFQ	Datasheet	Bulk	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	300pF @ 1V, 1MHz	0 ns	250 µA @ 650 V	650 V	10A	175°C (Max)	1.7 V @ 10 A
BYC75W-1200PQ STANDARD MARKING * HORIZONTAL, R WeEn Semiconductors	2,890	6.41	RFQ	Datasheet	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	85 ns	250 µA @ 1200 V	1200 V	75A	175°C (Max)	-
NXPSC04650X6Q DIODE SCHOTTKY 650V 4A TO220F WeEn Semiconductors	2,998	2.86	RFQ	Datasheet	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	130pF @ 1V, 1MHz	0 ns	170 µA @ 650 V	650 V	4A	175°C (Max)	1.7 V @ 4 A

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