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Diodes-Rectifiers-Single(50136)
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYC5-600,127DIODE GEN PURP 500V 5A TO220AC |
5,562 | 0.93 |
|
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 100 µA @ 600 V | 500 V | 5A | 150°C (Max) | 2.9 V @ 5 A | ||
|
WND10P08XQSTANDARD POWER DIODE |
4,852 | 0.94 |
|
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 800 V | 800 V | 10A | 150°C | 1.3 V @ 10 A | ||
|
|
WND08P16XQSTANDARD POWER DIODE |
4,374 | 0.94 |
|
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 µA @ 1600 V | 1600 V | 8A | 150°C | 1.2 V @ 8 A | ||
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NXPSC066506QDIODE SCHOTTKY 650V 6A TO220AC |
3,000 | 3.85 |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 190pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | ||
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NXPSC06650X6QDIODE SCHOTTKY 650V 6A TO220F |
2,997 | 4.01 |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 190pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | ||
|
NXPSC10650B6JDIODE SCHOTTKY 650V 10A D2PAK |
3,190 | 6.48 |
|
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | ||
|
|
NXPSC06650B6JDIODE SCHOTTKY 650V 6A D2PAK |
3,190 | 3.91 |
|
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 190pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | ||
|
WNSC12650WQSILICON CARBIDE SCHOTTKY DIODE |
1,200 | 4.36 |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 328pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 12A | 175°C | 1.7 V @ 12 A | ||
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NXPSC12650B6JSILICON CARBIDE POWER DIODE |
6,400 | 7.05 |
|
- | Cut Tape (CT),Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 380pF @ 1V, 1MHz | 0 ns | 80 µA @ 650 V | 650 V | 12A | 175°C (Max) | 1.7 V @ 12 A | |
|
BYC405X-400PQDUAL HYPERFAST POWER DIODE |
4,098 | 1.03 |
|
- | Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 10 µA @ 400 V | 400 V | 10A | 150°C | 1.5 V @ 5 A | |
|
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WNSC2D101200WQSILICON CARBIDE SCHOTTKY DIODE |
3,000 | 4.97 |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 490pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 10A | 175°C | 1.65 V @ 10 A | ||
|
|
NXPSC086506QDIODE SCHOTTKY 650V 8A TO220AC |
3,000 | 5.13 |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | ||
|
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NXPSC08650X6QDIODE SCHOTTKY 650V 8A TO220F |
2,998 | 5.13 |
|
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | ||
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NXPSC08650D6JDIODE SCHOTTKY 650V 8A DPAK |
7,184 | 5.07 |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | ||
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WNSC6D06650QSILICON CARBIDE SCHOTTKY DIODE I |
3,000 | 2.68 |
|
- | Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 327pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 6A | 175°C | 1.4 V @ 6 A | |
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BYC30WT-600PQDIODE GEN PURP 600V 30A TO247-3 |
2,928 | 2.68 |
|
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 22 ns | 10 µA @ 600 V | 600 V | 30A | 175°C (Max) | 2.75 V @ 30 A | ||
|
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NXPSC106506QDIODE SCHOTTKY 650V 10A TO220AC |
3,000 | 6.41 |
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Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | ||
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NXPSC10650X6QDIODE SCHOTTKY 650V 10A TO220F |
3,000 | 6.41 |
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Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | ||
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BYC75W-1200PQSTANDARD MARKING * HORIZONTAL, R |
2,890 | 6.41 |
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Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 85 ns | 250 µA @ 1200 V | 1200 V | 75A | 175°C (Max) | - | ||
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NXPSC04650X6QDIODE SCHOTTKY 650V 4A TO220F |
2,998 | 2.86 |
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Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 130pF @ 1V, 1MHz | 0 ns | 170 µA @ 650 V | 650 V | 4A | 175°C (Max) | 1.7 V @ 4 A |
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