Upload BOM
Shipping address
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYC30-600P,127DIODE GEN PURP 600V 30A TO220AC |
2,208 | 2.93 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 600 V | 600 V | 30A | 175°C (Max) | 1.8 V @ 30 A | |
|
|
WNSC2D151200WQSILICON CARBIDE SCHOTTKY DIODE |
1,900 | 6.62 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 700pF @ 1V, 1MHz | 0 ns | 150 µA @ 1200 V | 1200 V | 15A | 175°C | 1.7 V @ 15 A | |
|
NXPSC126506QSILICON CARBIDE POWER DIODE |
2,984 | 6.73 |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 380pF @ 1V, 1MHz | 0 ns | 80 µA @ 650 V | 650 V | 12A | 175°C (Max) | 1.7 V @ 12 A | ||
|
|
WNSC6D08650QSILICON CARBIDE SCHOTTKY DIODE I |
3,000 | 3.09 |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 402pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 8A | 175°C | 1.4 V @ 8 A | ||
|
|
WNSC2D10650XQSILICON CARBIDE SCHOTTKY DIODE |
2,995 | 3.15 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 310pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 10A | 175°C | 1.7 V @ 10 A | |
|
|
NXPSC16650B6JSILICON CARBIDE POWER DIODE |
3,196 | 7.06 |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 534pF @ 1V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 16A | 175°C (Max) | 1.7 V @ 16 A | ||
|
WNSC6D20650WQSILICON CARBIDE SCHOTTKY DIODE I |
1,180 | 7.07 |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.2nF @ 1V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 20A | 175°C | 1.4 V @ 20 A | ||
|
|
WNSC10650WQSILICON CARBIDE SCHOTTKY DIODE |
1,190 | 3.21 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 328pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 10A | 175°C | 1.7 V @ 10 A | |
|
NXPSC08650B6JDIODE SCHOTTKY 650V 8A D2PAK |
3,175 | 5.19 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
|
NXPSC10650D6JDIODE SCHOTTKY 650V 10A DPAK |
7,440 | 6.35 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | |
|
|
WNSC6D10650QSILICON CARBIDE SCHOTTKY DIODE I |
3,000 | 3.50 |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 500pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 10A | 175°C | 1.4 V @ 10 A | ||
|
|
BYC60W-600PQDIODE GEN PURP 600V 60A TO247-2 |
2,705 | 3.53 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 60A | 175°C (Max) | 2.6 V @ 60 A | |
|
WNSC08650T6JSILICON CARBIDE POWER DIODE |
2,976 | 3.33 |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 267pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | ||
|
NXPSC06650QDIODE SCHOTTKY 650V 6A TO220AC |
1,998 | 3.34 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 190pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | |
|
BYV29FX-600,127DIODE GEN PURP 600V 9A TO220FP |
245 | 1.04 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 9A | 150°C (Max) | 1.9 V @ 8 A | |
|
|
NXPLQSC10650QDIODE SCHOTTKY 650V 10A TO220AC |
923 | 3.62 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.85 V @ 10 A | |
|
|
WNSC10650T6JSILICON CARBIDE POWER DIODE |
2,940 | 3.78 |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 328pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | ||
|
|
NXPSC10650QDIODE SCHOTTKY 650V 10A TO220AC |
1,943 | 5.57 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | |
|
|
WNSC051200QSILICON CARBIDE POWER DIODE |
2,980 | 5.61 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 5A | 175°C (Max) | 1.6 V @ 5 A | |
|
|
WNSC101200QSILICON CARBIDE POWER DIODE |
2,435 | 8.93 |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 510pF @ 1V, 1MHz | 0 ns | 110 µA @ 1200 V | 1200 V | 10A | 175°C (Max) | 1.6 V @ 10 A |
