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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
MSC010SDA070K

MSC010SDA070K

DIODE SCHOTTKY 700V 10A TO220-3

Microchip Technology

2,237 2.79

RFQ

MSC010SDA070K

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole - 0 ns - 700 V 10A (DC) - 1.5 V @ 10 A
MSC010SDA070B

MSC010SDA070B

DIODE SCHOTTKY 700V TO-247

Microchip Technology

3,163 3.12

RFQ

MSC010SDA070B

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 353pF @ 1V, 1MHz 0 ns 200 µA @ 700 V 700 V 24A (DC) -55°C ~ 175°C 1.8 V @ 10 A
APT30D20BG

APT30D20BG

DIODE GEN PURP 200V 30A TO247

Microchip Technology

2,862 2.61

RFQ

APT30D20BG

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 24 ns 250 µA @ 200 V 200 V 30A -55°C ~ 175°C 1.3 V @ 30 A
JANTX1N5617US

JANTX1N5617US

DIODE GEN PURP 400V 1A D5A

Microchip Technology

3,433 8.10

RFQ

JANTX1N5617US

Datasheet

Bulk Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 35pF @ 12V, 1MHz 150 ns 500 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.6 V @ 3 A
1N5417US

1N5417US

DIODE GEN PURP 200V 3A D5B

Microchip Technology

3,877 8.42

RFQ

1N5417US

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 150 ns 1 µA @ 200 V 200 V 3A -65°C ~ 175°C 1.5 V @ 9 A
MSC030SDA070S

MSC030SDA070S

GEN2 SIC SBD 700V 30A D3PAK

Microchip Technology

3,313 7.05

RFQ

MSC030SDA070S

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount - 0 ns - 700 V 30A (DC) -55°C ~ 175°C 1.8 V @ 30 A
1N5553US

1N5553US

DIODE GEN PURP 800V 3A B-MELF

Microchip Technology

100 9.78

RFQ

1N5553US

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs 1 µA @ 800 V 800 V 3A -65°C ~ 175°C 1.2 V @ 9 A
JANTXV1N5614US

JANTXV1N5614US

DIODE GEN PURP 200V 1A D5A

Microchip Technology

3,145 9.68

RFQ

JANTXV1N5614US

Datasheet

Bulk Military, MIL-PRF-19500/427 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs 500 nA @ 200 V 200 V 1A -65°C ~ 200°C 1.3 V @ 3 A
MSC010SDA120B

MSC010SDA120B

DIODE SCHOTTKY 1.2KV 10A TO247

Microchip Technology

2,624 4.24

RFQ

MSC010SDA120B

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole - 0 ns - 1200 V 10A (DC) - 1.5 V @ 10 A
JANTX1N3644

JANTX1N3644

DIODE GP 1.5KV 250MA S AXIAL

Microchip Technology

2,971 19.98

RFQ

JANTX1N3644

Datasheet

Bulk Military, MIL-PRF-19500/279 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - - 5 µA @ 1500 V 1500 V 250mA -65°C ~ 175°C 5 V @ 250 mA
MSC015SDA120B

MSC015SDA120B

DIODE SCHOTTKY 1.2KV 15A TO247

Microchip Technology

3,953 5.93

RFQ

MSC015SDA120B

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole - 0 ns - 1200 V 15A (DC) - 1.5 V @ 15 A
UES1002

UES1002

DIODE GEN PURP 100V 1A AXIAL

Microchip Technology

3,793 17.07

RFQ

UES1002

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 2 µA @ 100 V 100 V 1A -55°C ~ 175°C 975 mV @ 1 A
UES1102SM

UES1102SM

DIODE GEN PURP 100V 2.5A A-MELF

Microchip Technology

2,741 20.25

RFQ

UES1102SM

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 3.5pF @ 6V, 1MHz 25 ns 2 µA @ 100 V 100 V 2.5A 150°C (Max) -
1N6080

1N6080

DIODE GEN PURP 100V 2A AXIAL

Microchip Technology

3,834 35.79

RFQ

1N6080

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 30 ns 10 µA @ 100 V 100 V 2A -65°C ~ 155°C 1.5 V @ 37.7 A
MSC050SDA070B

MSC050SDA070B

DIODE SCHOTTKY 700V 50A TO247

Microchip Technology

2,159 9.82

RFQ

MSC050SDA070B

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole - 0 ns - 700 V 50A (DC) - 1.5 V @ 50 A
HS18140

HS18140

DIODE SCHOTTKY 40V 180A HALFPAK

Microchip Technology

3,317 44.07

RFQ

HS18140

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Chassis Mount 7500pF @ 5V, 1MHz - 4 mA @ 40 V 40 V 180A - 700 mV @ 180 A
JANS1N5615

JANS1N5615

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

3,601 54.64

RFQ

JANS1N5615

Datasheet

Bulk Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 45pF @ 12V, 1MHz 150 ns 500 nA @ 200 V 200 V 1A -65°C ~ 175°C 1.6 V @ 3 A
S3480

S3480

DIODE GEN PURP 800V 45A DO203AB

Microchip Technology

2,530 48.20

RFQ

S3480

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Stud Mount - - 10 µA @ 800 V 800 V 45A -65°C ~ 200°C 1.15 V @ 90 A
MSC050SDA120S

MSC050SDA120S

UNRLS, FG, GEN2, SIC SBD, TO-268

Microchip Technology

3,128 15.69

RFQ

MSC050SDA120S

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount - 0 ns - 1200 V 50A (DC) - -
UES1106

UES1106

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

3,900 18.42

RFQ

UES1106

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.25 V @ 1 A
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