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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
APT60DQ100BG

APT60DQ100BG

DIODE GEN PURP 1KV 60A TO247

Microchip Technology

3,700 2.26

RFQ

APT60DQ100BG

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 255 ns 100 µA @ 1000 V 1000 V 60A -55°C ~ 175°C 3 V @ 60 A
APT30S20BG

APT30S20BG

DIODE SCHOTTKY 200V 45A TO247

Microchip Technology

3,237 2.52

RFQ

APT30S20BG

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - 55 ns 500 µA @ 200 V 200 V 45A -55°C ~ 150°C 850 mV @ 30 A
APT60D40BG

APT60D40BG

DIODE GEN PURP 400V 60A TO247

Microchip Technology

3,466 2.99

RFQ

APT60D40BG

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 37 ns 250 µA @ 400 V 400 V 60A -55°C ~ 175°C 1.5 V @ 60 A
1N5614

1N5614

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

2,188 3.63

RFQ

1N5614

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 200 V 200 V 1A -65°C ~ 200°C 1.3 V @ 3 A
1N3611

1N3611

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

3,789 4.11

RFQ

1N3611

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 1 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.1 V @ 1 A
JAN1N5617

JAN1N5617

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

3,034 4.30

RFQ

JAN1N5617

Datasheet

Bulk Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 150 ns 500 nA @ 400 V 400 V 1A -65°C ~ 175°C 1.6 V @ 3 A
APT60D100BG

APT60D100BG

DIODE GEN PURP 1KV 60A TO247

Microchip Technology

3,348 4.98

RFQ

APT60D100BG

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 280 ns 250 µA @ 1000 V 1000 V 60A -55°C ~ 175°C 2.5 V @ 60 A
CDLL5819

CDLL5819

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

2,235 5.74

RFQ

CDLL5819

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 70pF @ 5V, 1MHz - 50 µA @ 45 V 45 V 1A -65°C ~ 125°C 490 mV @ 1 A
1N5554

1N5554

DIODE GEN PURP 1KV 3A AXIAL

Microchip Technology

3,727 7.89

RFQ

1N5554

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 1000 V 1000 V 3A -65°C ~ 175°C 1.2 V @ 9 A
1N5802US

1N5802US

DIODE GEN PURP 50V 1A D5A

Microchip Technology

3,837 8.42

RFQ

1N5802US

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 10V, 1MHz 25 ns 1 µA @ 50 V 50 V 1A -65°C ~ 175°C 875 mV @ 1 A
MSC050SDA120B

MSC050SDA120B

DIODE SCHOTTKY 1200V TO-247

Microchip Technology

3,955 14.87

RFQ

MSC050SDA120B

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 246pF @ 400V, 1MHz 0 ns 200 µA @ 1200 V 1200 V 109A (DC) -55°C ~ 175°C 1.8 V @ 50 A
MSC030SDA070B

MSC030SDA070B

DIODE SCHOTTKY 700V TO-247

Microchip Technology

2,019 6.23

RFQ

MSC030SDA070B

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1200pF @ 1V, 1MHz 0 ns 200 µA @ 700 V 700 V 60A (DC) -55°C ~ 175°C 1.8 V @ 30 A
1N5553

1N5553

DIODE GEN PURP 800V 3A AXIAL

Microchip Technology

2,599 6.37

RFQ

1N5553

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 800 V 800 V 3A -65°C ~ 175°C 1.2 V @ 9 A
CDLL5195

CDLL5195

DIODE GEN PURP 180V 200MA DO213

Microchip Technology

3,409 7.49

RFQ

CDLL5195

Datasheet

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - - 100 µA @ 180 V 180 V 200mA -65°C ~ 175°C 1 V @ 100 mA
MSC030SDA120K

MSC030SDA120K

UNRLS, FG, GEN2, SIC SBD, TO-220

Microchip Technology

3,142 9.07

RFQ

MSC030SDA120K

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole - 0 ns - 1200 V 30A (DC) -55°C ~ 175°C -
MSC030SDA120S

MSC030SDA120S

UNRLS, FG, GEN2, SIC SBD, TO-268

Microchip Technology

2,193 10.22

RFQ

MSC030SDA120S

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount - 0 ns - 1200 V 30A (DC) - -
1N6663US

1N6663US

DIODE GEN PURP 600V 500MA D5A

Microchip Technology

2,663 18.66

RFQ

1N6663US

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - - 50 nA @ 600 V 600 V 500mA (DC) -65°C ~ 175°C 1 V @ 400 mA
MSC050SDA070S

MSC050SDA070S

GEN2 SIC SBD 700V 50A D3PAK

Microchip Technology

3,372 10.63

RFQ

MSC050SDA070S

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 2034pF @ 1V, 1MHz 0 ns 200 µA @ 700 V 700 V 88A (DC) -55°C ~ 175°C 1.8 V @ 50 A
UES1103

UES1103

DIODE GEN PURP 150V 2.5A AXIAL

Microchip Technology

3,900 18.45

RFQ

UES1103

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 2 µA @ 150 V 150 V 2.5A 175°C (Max) 975 mV @ 2 A
UES1303

UES1303

DIODE GEN PURP 150V 6A AXIAL

Microchip Technology

2,476 26.70

RFQ

UES1303

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 5 µA @ 150 V 150 V 6A 175°C (Max) 925 mV @ 6 A
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