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Diodes-Rectifiers-Single(50136)
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT60DQ100BGDIODE GEN PURP 1KV 60A TO247 |
3,700 | 2.26 |
|
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 255 ns | 100 µA @ 1000 V | 1000 V | 60A | -55°C ~ 175°C | 3 V @ 60 A | ||
|
|
APT30S20BGDIODE SCHOTTKY 200V 45A TO247 |
3,237 | 2.52 |
|
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | 55 ns | 500 µA @ 200 V | 200 V | 45A | -55°C ~ 150°C | 850 mV @ 30 A | ||
|
|
APT60D40BGDIODE GEN PURP 400V 60A TO247 |
3,466 | 2.99 |
|
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 37 ns | 250 µA @ 400 V | 400 V | 60A | -55°C ~ 175°C | 1.5 V @ 60 A | ||
|
1N5614DIODE GEN PURP 200V 1A AXIAL |
2,188 | 3.63 |
|
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | ||
|
|
1N3611DIODE GEN PURP 200V 1A AXIAL |
3,789 | 4.11 |
|
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | ||
|
JAN1N5617DIODE GEN PURP 400V 1A AXIAL |
3,034 | 4.30 |
|
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
|
APT60D100BGDIODE GEN PURP 1KV 60A TO247 |
3,348 | 4.98 |
|
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 280 ns | 250 µA @ 1000 V | 1000 V | 60A | -55°C ~ 175°C | 2.5 V @ 60 A | ||
|
CDLL5819DIODE SCHOTTKY 45V 1A DO213AB |
2,235 | 5.74 |
|
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 70pF @ 5V, 1MHz | - | 50 µA @ 45 V | 45 V | 1A | -65°C ~ 125°C | 490 mV @ 1 A | ||
|
1N5554DIODE GEN PURP 1KV 3A AXIAL |
3,727 | 7.89 |
|
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1000 V | 1000 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A | ||
|
1N5802USDIODE GEN PURP 50V 1A D5A |
3,837 | 8.42 |
|
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 875 mV @ 1 A | ||
|
MSC050SDA120BDIODE SCHOTTKY 1200V TO-247 |
3,955 | 14.87 |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 246pF @ 400V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 109A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A | ||
|
|
MSC030SDA070BDIODE SCHOTTKY 700V TO-247 |
2,019 | 6.23 |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1200pF @ 1V, 1MHz | 0 ns | 200 µA @ 700 V | 700 V | 60A (DC) | -55°C ~ 175°C | 1.8 V @ 30 A | ||
|
1N5553DIODE GEN PURP 800V 3A AXIAL |
2,599 | 6.37 |
|
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A | ||
|
CDLL5195DIODE GEN PURP 180V 200MA DO213 |
3,409 | 7.49 |
|
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | - | 100 µA @ 180 V | 180 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | ||
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MSC030SDA120KUNRLS, FG, GEN2, SIC SBD, TO-220 |
3,142 | 9.07 |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | - | 1200 V | 30A (DC) | -55°C ~ 175°C | - | ||
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MSC030SDA120SUNRLS, FG, GEN2, SIC SBD, TO-268 |
2,193 | 10.22 |
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Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | - | 1200 V | 30A (DC) | - | - | ||
|
1N6663USDIODE GEN PURP 600V 500MA D5A |
2,663 | 18.66 |
|
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 nA @ 600 V | 600 V | 500mA (DC) | -65°C ~ 175°C | 1 V @ 400 mA | ||
|
|
MSC050SDA070SGEN2 SIC SBD 700V 50A D3PAK |
3,372 | 10.63 |
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Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 2034pF @ 1V, 1MHz | 0 ns | 200 µA @ 700 V | 700 V | 88A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A | ||
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UES1103DIODE GEN PURP 150V 2.5A AXIAL |
3,900 | 18.45 |
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Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 2 µA @ 150 V | 150 V | 2.5A | 175°C (Max) | 975 mV @ 2 A | ||
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UES1303DIODE GEN PURP 150V 6A AXIAL |
2,476 | 26.70 |
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Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 5 µA @ 150 V | 150 V | 6A | 175°C (Max) | 925 mV @ 6 A |
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