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Vishay Siliconix SQM120P10_10M1LGE3

Part No. SQM120P10_10M1LGE3

Manufacturer Vishay Siliconix

Category Transistors - FETs, MOSFETs - Single

Package TO-263 (D²Pak)

Datasheet SQM120P10_10M1LGE3.pdf

Description MOSFET P-CH 100V 120A TO263

Quantity

RFQ

SQM120P10_10M1LGE3 Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series Automotive, AEC-Q101, TrenchFET®

ProductStatus Active

FETType P-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 100 V

Current-ContinuousDrain(Id)@25°C 120A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V

RdsOn(Max)@IdVgs 10.1mOhm @ 30A, 10V

Vgs(th)(Max)@Id 2.5V @ 250µA

GateCharge(Qg)(Max)@Vgs 190 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds 9000 pF @ 25 V

FETFeature -

PowerDissipation(Max) 375W (Tc)

OperatingTemperature -55°C ~ 175°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet SQM120P10_10M1LGE3.pdf

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SQM120P10_10M1LGE3 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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